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    Semiconductor device
    6.
    发明专利
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号：JP2010123998A

    公开(公告)日：2010-06-03

    申请号：JP2010046384

    申请日：2010-03-03

    申请人： Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    发明人： TAKAYAMA TORU ,  YAMAZAKI SHUNPEI ,  AKIMOTO KENGO

    IPC分类号： H01L29/786 ,  H01L21/314 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L23/52 ,  H01L27/12 ,  H01L27/13 ,  H01L29/423 ,  H01L29/49

    CPC分类号： H01L27/124 ,  B32B17/04 ,  B32B17/06 ,  C23C14/0652 ,  C23C14/5846 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3297 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66757 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

    摘要： PROBLEM TO BE SOLVED: To prevent a TFT from being polluted by Cu by pinching a Cu wiring by a silicon nitride film. SOLUTION: The semiconductor device includes: a crystalline semiconductor film; a gate insulating film on the crystalline semiconductor film and a gate electrode on the gate insulating film; a first interlayer insulating film on the crystalline semiconductor film and the gate electrode; a first interconnection electrically connected with the crystalline semiconductor film through a first contact portion prepared in the first interlayer insulating film; a first silicon nitride film in which a second contact portion in which a part of the first interconnection is exposed is prepared and a second interlayer insulating film on the first silicon nitride film, both films being on the first interlayer insulating film and the first interconnection; a barrier layer which prevents spread of Cu prepared on the first interconnection exposed by the second contact portion; a second interconnection comprising Cu on the barrier layer prepared in the second contact portion; and a second silicon nitride film prepared by covering the second interconnection. COPYRIGHT: (C)2010,JPO&INPIT

    摘要翻译： 要解决的问题：通过用氮化硅膜夹持Cu布线来防止TFT被Cu污染。 解决方案：半导体器件包括：晶体半导体膜; 晶体半导体膜上的栅极绝缘膜和栅极绝缘膜上的栅电极; 在晶体半导体膜和栅电极上的第一层间绝缘膜; 通过在所述第一层间绝缘膜中制备的第一接触部分与所述结晶半导体膜电连接的第一互连; 准备第一氮化硅膜，其中暴露第一互连部分的第二接触部分和在第一氮化硅膜上的第二层间绝缘膜，两个膜位于第一层间绝缘膜和第一互连上; 阻挡层，其防止由所述第二接触部暴露的所述第一互连上制备的Cu的扩散; 包括在所述第二接触部分中制备的阻挡层上的Cu的第二互连; 以及通过覆盖第二互连制备的第二氮化硅膜。 版权所有（C）2010，JPO＆INPIT

    Transparent conductive film and its manufacturing method
    7.
    发明专利
    Transparent conductive film and its manufacturing method 有权
    透明导电薄膜及其制造方法

    公开(公告)号：JP2009099327A

    公开(公告)日：2009-05-07

    申请号：JP2007268343

    申请日：2007-10-15

    申请人： Aisekku Nano Tyubu Co Ltd ,  Tokai Univ ,  アイセック・ナノ中部株式会社 ,  学校法人東海大学

    发明人： KUJI TOSHIRO ,  CHIBA MASAFUMI ,  HONJO TAKAMITSU ,  KOTODA KOICHIRO

    IPC分类号： H01B5/14 ,  C23C14/34 ,  H01B13/00

    CPC分类号： C23C14/06 ,  C23C14/0635 ,  C23C14/34 ,  C23C14/5846

    摘要： PROBLEM TO BE SOLVED: To provide a novel transparent conductive film and its manufacturing method.
    SOLUTION: The transparent conductive film contains magnesium, at least one of element (A) selected from a group consisting of carbon, silicon and boron, oxygen, and hydrogen. The transparent conductive film is manufactured by using a target containing magnesium and a target containing at least one of element (A) selected from the group consisting of carbon, silicon and boron, e.g., for forming a film containing the magnesium and the element (A) on a substrate and holding the film in an atmosphere containing water.
    COPYRIGHT: (C)2009,JPO&INPIT

    摘要翻译： 要解决的问题：提供一种新颖的透明导电膜及其制造方法。 解决方案：透明导电膜含有镁，选自碳，硅和硼，氧和氢中的元素（A）中的至少一种。 通过使用含有镁的靶和含有选自碳，硅和硼的元素（A）中的至少一种的靶，例如用于形成含有镁和元素（A）的膜，制造透明导电膜 ），并将膜保持在含水的气氛中。 版权所有（C）2009，JPO＆INPIT

    Manufacturing method of semiconductor device, manufacturing device for semiconductor and program
    8.
    发明专利
    Manufacturing method of semiconductor device, manufacturing device for semiconductor and program 审中-公开
    半导体器件的制造方法，半导体和程序的制造设备

    公开(公告)号：JP2008218659A

    公开(公告)日：2008-09-18

    申请号：JP2007053178

    申请日：2007-03-02

    申请人： Tokyo Electron Ltd ,  東京エレクトロン株式会社

    发明人： NAGAI HIROYUKI ,  MIYOSHI SHUSUKE ,  MAEKAWA KAORU

    IPC分类号： H01L21/3205 ,  C23C14/58 ,  C23C16/56 ,  H01L21/02 ,  H01L21/285 ,  H01L23/52

    CPC分类号： C23C14/14 ,  C23C14/5806 ,  C23C14/5846 ,  H01L21/2855 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873

    摘要： PROBLEM TO BE SOLVED: To provide technology for suppressing the oxidation of a copper film and the raise of wiring resistance in forming a barrier film and the copper film along the recessed part of an insulating film by utilizing an alloy film of copper and additional metal, and then embedding the copper wiring. SOLUTION: The manufacturing method of the semiconductor device is carried out so as to comprise processes of: forming the alloy film, produced by adding the additional metal into copper, along the wall surface of the recessed part on an interlayer insulating film on the surface of a substrate; heating the substrate in an atmosphere containing organic acid, organic anhydride or the ketones in order to form the barrier layer, consisting of the compound of constituting elements of the additional metal and the interlayer insulating film, and deposit excessive additional metal on the surface of the alloy film; and embedding the copper into the recessed part. Since the organic acid anhydride and ketones have reducibility to copper, the barrier layer consisting of the compound of the additional metal and the constituting element in the insulating film can be formed while suppressing the oxidation of copper contained in the alloy film. COPYRIGHT: (C)2008,JPO&INPIT

    摘要翻译： 要解决的问题：通过利用铜的合金膜和铜的合金膜，提供抑制铜膜的氧化的技术和形成隔离膜和铜膜沿着绝缘膜的凹部的布线电阻的提高 附加金属，然后嵌入铜线。 解决方案：半导体器件的制造方法进行，包括以下工艺：通过在层间绝缘膜上沿着凹陷部分的壁表面将形成通过将附加金属添加到铜中的合金膜 衬底的表面; 在含有有机酸，有机酸酐或酮的气氛中加热基材，以形成由附加金属的构成元素和层间绝缘膜构成的化合物构成的阻挡层，并在其表面上沉积过量的附加金属 合金膜; 并将铜嵌入到凹部中。 由于有机酸酐和酮具有对铜的还原性，所以可以在抑制合金膜中所含的铜的氧化的同时，形成由绝缘膜中的附加金属的化合物和构成元素构成的阻挡层。 版权所有（C）2008，JPO＆INPIT