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公开(公告)号：JP2014186272A
公开(公告)日：2014-10-02
申请号：JP2013062887
申请日：2013-03-25
CPC分类号： G03F7/038 , C07C381/12 , C08F20/52 , C08F220/24 , C08F220/56 , G03F7/0045 , G03F7/0397
摘要： PROBLEM TO BE SOLVED: To provide a resist composition from which a resist pattern with reduced roughness can be formed while maintaining good sensitivity.SOLUTION: The resist composition comprises a polymeric compound having a partial structure expressed by general formula (a0-r-1) and a structural unit expressed by general formula (a0-1). In formula (a0-r-1), Yrepresents a divalent connecting group; Rand Rexclude a fluorine atom and represent a group having 0 to 20 carbon atoms, and one of Rand Rcan form a ring with Y; m represents an integer of 1 or more; and Mrepresents an organic cation having a valence of m. In formula (a0-1), R represents a hydrogen atom, an alkyl group or a halogenated alkyl group; Yarepresents a single bond or a divalent connecting group; and Xrepresents a sulfur atom or an oxygen atom.
摘要翻译： 要解决的问题：提供一种抗蚀剂组合物，由此可以形成具有降低的粗糙度的抗蚀剂图案，同时保持良好的灵敏度。溶胶：抗蚀剂组合物包含具有由通式（a0-r-1）表示的部分结构的聚合化合物， 和由通式（a0-1）表示的结构单元。 在式（a0-r-1）中，Y表示二价连接基团; 兰德包含一个氟原子，代表一个有0到20个碳原子的基团，兰德兰格之一与Y形成一个环; m表示1以上的整数， 并且M表示具有m价的有机阳离子。 在式（a0-1）中，R表示氢原子，烷基或卤代烷基; Yarepresent一个单键或二价连接基团; X表示硫原子或氧原子。
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公开(公告)号：JP2013142810A
公开(公告)日：2013-07-22
申请号：JP2012003412
申请日：2012-01-11
发明人： SHIMIZU HIROAKI , YOKOYA JIRO , NAKAMURA TAKESHI , NITO TAKEHITO
IPC分类号： G03F7/004 , G03F7/038 , H01L21/027
CPC分类号： G03F7/027 , G03F7/0045 , G03F7/0392 , G03F7/20 , G03F7/40
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a negative resist pattern having high resolution and good shape and a resist composition.SOLUTION: There are provided a method for forming a resist pattern comprising the steps of: (1) forming a resist film by applying a resist composition containing a base material component whose solubility to an alkali developer is increased by the action of an acid and a compound represented by the general formula (c1) on a substrate; (2) exposing the resist film; (3) performing baking after the step (2); and (4) alkali developing the resist film to form a negative resist pattern in which an unexposed part of the resist film is removed by dissolving, and the resist composition used in the step (1), wherein, Ris a group forming an aromatic ring together with two carbon atoms to which the Ris bonded, Ris a hydrogen atom or a hydrocarbon group, and Ris a hydrogen atom, a carboxyl group or a hydrocarbon group having 1 to 15 carbon atoms.
摘要翻译： 要解决的问题：提供一种形成具有高分辨率和良好形状的抗蚀剂图案的方法和抗蚀剂组合物。解决方案：提供一种形成抗蚀剂图案的方法，包括以下步骤：（1）形成抗蚀剂膜 通过在基材上涂布含有通过酸和通式（c1）表示的化合物的作用使碱显影剂的溶解度增加的基材成分的抗蚀剂组合物; （2）曝光抗蚀膜; （3）在步骤（2）之后进行烘烤; 和（4）使抗蚀剂膜碱显影以形成通过溶解去除抗蚀膜的未曝光部分的负抗蚀剂图案，以及在步骤（1）中使用的抗蚀剂组合物，其中R是形成芳环的基团 与R 2键合的两个碳原子一起形成，R 1为氢原子或烃基，R 1为氢原子，羧基或碳原子数为1〜15的烃基。
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公开(公告)号：JP2013122570A
公开(公告)日：2013-06-20
申请号：JP2012140216
申请日：2012-06-21
发明人： SHIMIZU HIROAKI , NAKAMURA TAKESHI , YOKOYA JIRO , NITO TAKEHITO
IPC分类号： G03F7/038 , C08F212/14 , C08F220/36 , C08F226/02 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0046 , C08F220/18 , C08F220/28 , C08F220/36 , G03F7/0045 , G03F7/095 , G03F7/2041 , G03F7/38 , Y10S430/106 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, by which a negative pattern can be formed with high resolution and in a favorable shape, and to provide a resist composition suitable to be used for the method.SOLUTION: The method for forming a resist pattern includes the steps of: (1) forming a resist film 2 by coating a support body 1 with a resist composition containing a base component (A) that generates a base by exposure and increases the solubility with an alkali developing solution by an action of an acid; (2) exposing the resist film 2; (3) baking the resist film after the step (2); and forming a negative resist pattern by developing the resist film 2 with an alkali to dissolve and remove an unexposed portion 2b of the resist film 2. The resist composition used for the step (1) is also disclosed.
摘要翻译： 要解决的问题：提供一种形成抗蚀剂图案的方法，通过该方法可以以高分辨率和良好的形状形成负型图案，并提供适合用于该方法的抗蚀剂组合物。 解决方案：形成抗蚀剂图案的方法包括以下步骤：（1）通过用含有通过曝光产生碱的基础组分（A）的抗蚀剂组合物涂覆支撑体1来形成抗蚀剂膜2，并增加 通过酸的作用与碱性显影液的溶解度; （2）使抗蚀膜2露出; （3）在步骤（2）之后烘烤抗蚀膜; 以及通过用碱显影抗蚀剂膜2来形成负的抗蚀剂图案以溶解并除去抗蚀剂膜2的未曝光部分2b。还公开了用于步骤（1）的抗蚀剂组合物。 版权所有（C）2013，JPO＆INPIT
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公开(公告)号：JP2013114219A
公开(公告)日：2013-06-10
申请号：JP2011262704
申请日：2011-11-30
发明人： SHIMIZU HIROAKI , NAKAMURA TAKESHI , YOKOYA JIRO , NITO TAKEHITO
IPC分类号： G03F7/039 , C08F220/28 , G03F7/004 , G03F7/038 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a resist pattern capable of forming a negative pattern having high resolution in an excellent shape, and a resist composition suitable to be used for the method.SOLUTION: Provided are a method of forming a resist pattern including the steps of: forming a resist film by using a resist composition containing a base component (A) and a photobase generator component; exposing the resist film; baking the resist film after the exposure; and subjecting the resist film to alkali development to form a negative resist pattern the unexposed part of which is dissolved and removed, and a resist composition used for the method. The component (A) includes a polymeric compound having a structural unit including an acid decomposable group, a structural unit including -SO- or a lactone-containing cyclic group, and a structural unit (where, 10 mol% or lower) represented by the formula (a3-1).
摘要翻译： 要解决的问题：提供形成能够形成具有优异形状的高分辨率的负型图案的抗蚀剂图案的方法和适用于该方法的抗蚀剂组合物。 提供一种形成抗蚀剂图案的方法，包括以下步骤：通过使用含有基础组分（A）和光碱产生剂组分的抗蚀剂组合物形成抗蚀剂膜; 曝光抗蚀膜; 曝光后烘烤抗蚀膜; 并对抗蚀剂膜进行碱显影以形成其未曝光部分被溶解和去除的负型抗蚀剂图案，以及用于该方法的抗蚀剂组合物。 组分（A）包括具有包括可酸分解基团的结构单元的聚合化合物，包含-SO 2 SB 3的结构单元或含内酯的环状基团，以及结构单元 单元（其中，10摩尔％以下）由式（a3-1）表示。 版权所有（C）2013，JPO＆INPIT
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公开(公告)号：JP2013068851A
公开(公告)日：2013-04-18
申请号：JP2011208147
申请日：2011-09-22
发明人： NITO TAKEHITO , NAKAMURA TAKESHI , SHIMIZU HIROAKI , YOKOYA JIRO
IPC分类号： G03F7/038 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition and a method for forming a resist pattern.SOLUTION: The resist composition is used in the following step (1) of a method for forming a resist pattern. The method includes steps of: (1) forming a resist film by applying a resist composition, which comprises a base component (A) showing increase in solubility in an alkali developing solution by an action of an acid, a photo-base generator component (C) generating a base by exposure, and an acidic compound component (G); (2) exposing the resist film; (3) baking the resist film to neutralize the base generated from the photo-base generator component (C) with the acidic compound component (G) in an exposed portion and to increase the solubility of the base component (A) in an alkali developing solution by an action of the acidic compound component (G) in an unexposed portion; and (4) forming a negative resist pattern by developing the resist film with an alkali to dissolve and eliminate the unexposed portion. In the resist composition, the acidic compound component (G) contains a compound (G1) comprising a nitrogen-containing cation having a pKa of 7 or less and a counter anion.
摘要翻译： 要解决的问题：提供抗蚀剂组合物和形成抗蚀剂图案的方法。 解决方案：抗蚀剂组合物用于形成抗蚀剂图案的方法的后续步骤（1）中。 该方法包括以下步骤：（1）通过施加抗蚀剂组合物形成抗蚀剂膜，该抗蚀剂组合物包含通过酸的作用显示在碱性显影液中溶解度增加的碱成分（A），光产生剂成分（ C）通过曝光产生碱，和酸性化合物组分（G）; （2）曝光抗蚀膜; （3）在露出部分中烘烤抗蚀膜以中和酸碱化合物组分（G）从光产生剂组分（C）产生的碱，并增加碱组分（A）在碱显影中的溶解度 通过酸性化合物组分（G）的作用在未曝光部分中的溶液; 和（4）通过用碱显影抗蚀剂膜形成负的抗蚀剂图案以溶解并消除未曝光部分。 在抗蚀剂组合物中，酸性化合物成分（G）含有包含pKa为7以下的含氮阳离子和抗衡阴离子的化合物（G1）。 版权所有（C）2013，JPO＆INPIT
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公开(公告)号：JP2012252315A
公开(公告)日：2012-12-20
申请号：JP2012022408
申请日：2012-02-03
发明人： YOKOYA JIRO , NAKAMURA TAKESHI , SHIMIZU HIROAKI , TAKESHITA MASARU , NITO TAKEHITO , SAITO HIROKUNI
IPC分类号： G03F7/038 , C08F220/10 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/203 , G03F7/2041 , G03F7/26 , G03F7/38
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, by which a resist pattern with high resolution can be formed.SOLUTION: The method for forming a resist pattern includes the steps of: (1) forming a resist film on a support body by using a resist composition containing a photo-base generator component and a base material component showing increase in the solubility with an alkali developing solution by an action of an acid; (2) exposing the resist film; (3) baking the film after the step (2) to neutralize a base generating from the photo-base generator component by exposure with an acid that is preliminarily supplied to the resist film in an exposed portion of the resist film and increasing solubility of the base material component with an alkali developing solution by an action of the acid preliminarily supplied to the resist film; and (4) forming a negative resist pattern by developing the resist film with an alkali to dissolve and remove an unexposed portion of the resist film.
摘要翻译： 要解决的问题：提供一种形成抗蚀剂图案的方法，通过该方法可以形成高分辨率的抗蚀剂图案。 解决方案：形成抗蚀剂图案的方法包括以下步骤：（1）通过使用包含光产生剂组分的抗蚀剂组合物和显示出溶解度增加的基材组分在支撑体上形成抗蚀剂膜 通过酸的作用产生碱显影液; （2）曝光抗蚀膜; （3）在步骤（2）之后烘烤膜以通过在抗蚀剂膜的暴露部分中预先提供给抗蚀剂膜的酸曝光从而中和由光产生剂组分产生的碱，并增加溶胶性 通过预先供给到抗蚀剂膜的酸的作用，将碱性成分与碱性显影液反应; 和（4）通过用碱显影抗蚀剂膜形成负的抗蚀剂图案，以溶解和除去抗蚀剂膜的未曝光部分。 版权所有（C）2013，JPO＆INPIT
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公开(公告)号：JP2012145868A
公开(公告)日：2012-08-02
申请号：JP2011005712
申请日：2011-01-14
IPC分类号： G03F7/039 , C08F220/28 , G03F7/004 , H01L21/027
CPC分类号： G03F7/0048 , G03F7/0397 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a resist composition dissolved in an organic solvent containing an alcohol solvent, the resist composition allowing formation of a pattern with a fine dimension in a good state, and to provide a method for forming a resist pattern.SOLUTION: A resist composition comprises a base component (A) the solubility of which with a developing solution changes by an action of an acid and an acid generator component (B) generating an acid by exposure, and these components are dissolved in an organic solvent (S). The basic component (A) contains a copolymer (A1) showing an increase in the polarity by an action of an acid. The copolymer (A1) includes the following structural units (a2) uniformly dispersed and disposed within the molecule, the structural units containing a lactone-containing cyclic group and derived from an acrylic acid ester, in which a hydrogen atom bonded to a carbon atom at an α-position may be substituted with a substituent.
摘要翻译： 解决的问题：为了提供溶解在含有醇溶剂的有机溶剂中的抗蚀剂组合物，该抗蚀剂组合物允许形成具有良好状态的微细尺寸的图案，并提供形成抗蚀剂图案的方法 。 解决方案：抗蚀剂组合物包括其显影液的溶解度通过暴露于酸和酸产生剂组分（B）的作用而变化的碱组分（A），并将这些组分溶解在 有机溶剂（S）。 碱性组分（A）含有通过酸的作用显示极性增加的共聚物（A1）。 共聚物（A1）包括在分子内均匀分散配置的以下结构单元（a2），含有含有内酯的环状基团的结构单元来源于丙烯酸酯，其中与碳原子键合的氢原子 α位可以被取代基取代。 版权所有（C）2012，JPO＆INPIT
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公开(公告)号：JP2011043786A
公开(公告)日：2011-03-03
申请号：JP2009289681
申请日：2009-12-21
IPC分类号： G03F7/40 , C08F220/28 , C08F220/38 , G03F7/004 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming method useful for forming a fine pattern.
SOLUTION: The pattern forming method has: the step (1) of applying a first chemically amplified positive resist composition on a support to form a first resist film, subject it to exposure, perform PEB, and perform alkali development to form a first resist pattern; the step (2) of applying a second film forming material on the support, on which the first resist pattern is formed, to form a second film, subject a region containing the position where the first resist pattern is formed to exposure, perform PEB, and perform alkali development. As the second film forming material, a material which contains organic solvent that does not dissolve the first resist layer, and of which solubility does not increase in relation to an alkali developing agent with an amount of energy equal to or smaller than that of the first chemically amplified positive resist composition is used. In the step (2), the exposure amount and PEB temperature are set so that only the first resist pattern in the exposed region is removed by the alkali development.
COPYRIGHT: (C)2011,JPO&INPIT摘要翻译： 要解决的问题：提供用于形成精细图案的图案形成方法。 解决方案：图案形成方法具有：将第一化学放大阳性抗蚀剂组合物施加到载体上以形成第一抗蚀剂膜，经受曝光，进行PEB并进行碱显影的步骤（1），形成 第一抗蚀剂图案; 在其上形成有第一抗蚀剂图案的支撑体上施加第二成膜材料以形成第二膜的步骤（2），将包含形成第一抗蚀剂图案的位置的区域经受曝光，执行PEB， 并进行碱发展。 作为第二成膜材料，含有不溶解第一抗蚀剂层的有机溶剂的材料，并且其能量相对于碱性显影剂的能量没有增加，其能量等于或小于第一抗蚀剂层的能量 使用化学放大的正性抗蚀剂组合物。 在步骤（2）中，曝光量和PEB温度被设定为仅通过碱显影去除曝光区域中的第一抗蚀剂图案。 版权所有（C）2011，JPO＆INPIT
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公开(公告)号：JP2010152068A
公开(公告)日：2010-07-08
申请号：JP2008329802
申请日：2008-12-25
发明人： SHIMIZU HIROAKI , NAKAMURA TAKESHI
IPC分类号： G03F7/004 , C08F20/26 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition having enhanced lithographic characteristics and capable of forming fine resist pattern having a satisfactory shape in a resist film having a super thin film, and to provide a resist pattern forming method.
SOLUTION: In the resist composition formed by dissolving a base material component (A), whose solubility to an alkali developing liquid is changed by action of an acid and an acid generating agent component (B) generating an acid by exposure in an organic solvent (S), the organic solvent (S) contains at least three organic solvent components S(1) to S(3); and the rates of the organic solvent components S(1) to S(3) in the organic solvent (S) are in the ranges of 50 to 90 mass%, 5 to 40 mass% and 0.1 to 15 mass%, respectively, to the sum of the total organic solvent components which constitutes the component (S).
COPYRIGHT: (C)2010,JPO&INPIT摘要翻译： 要解决的问题：提供具有增强的光刻特性并能够在具有超薄膜的抗蚀剂膜中形成具有令人满意的形状的精细抗蚀剂图案的抗蚀剂组合物，并提供抗蚀剂图案形成方法。 解决方案：在通过溶解基质组分（A）形成的抗蚀剂组合物中，其碱性显影液的溶解度通过酸和酸产生剂组分（B）的作用发生改变而产生酸的基质成分（A） 有机溶剂（S），有机溶剂（S）含有至少3种有机溶剂成分S（1）〜S（3）。 在有机溶剂（S）中有机溶剂成分S（1）〜S（3）的比例分别为50〜90质量％，5〜40质量％，0.1〜15质量％ 构成组分（S）的总有机溶剂组分的总和。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JP2010122421A
公开(公告)日：2010-06-03
申请号：JP2008295385
申请日：2008-11-19
IPC分类号： G03F7/004 , C07C251/66 , C07C309/17 , C08F20/10 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition improving lithographic characteristics and forming a resist pattern having a satisfactory shape, and a method for forming a resist pattern. SOLUTION: The resist composition contains a substrate component (A) whose solubility to alkali developer is changed by action of acid; an acid generator component (B) which generates an acid by exposure; and an optical base generator component (F) which generates a base by exposure. The acid generator component (B) includes an acid generator (B1) having an anion part represented by general formula (Ia), and the optical base generator component (F) includes an optical base generator (F1) composed of a compound represented by general formula (f1). COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译： 要解决的问题：提供改善光刻特性并形成具有令人满意的形状的抗蚀剂图案的抗蚀剂组合物和形成抗蚀剂图案的方法。 解决方案：抗蚀剂组合物含有其对碱显影剂的溶解度通过酸的作用而改变的底物组分（A） 通过曝光产生酸的酸发生剂组分（B）; 以及通过曝光产生基底的光学基底发生器部件（F）。 酸产生剂组分（B）包括具有由通式（Ia）表示的阴离子部分的酸发生剂（B1），光学基质发生剂组分（F）包括由通式 公式（f1）。 版权所有（C）2010，JPO＆INPIT
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