Abstract:
PROBLEM TO BE SOLVED: To increase sensitivity of an SMIS system.SOLUTION: The sensitivity of a secondary ion mass spectrometer (SIMS) is increased by using steam in order to raise yield of a positive secondary ion to be sputtered by a primary convergence ion beam. The steam is positioned near a sample and injected through a needle to be electrically biased in order to reduce interference with a collection field of the secondary ion. The sensitivity is raised especially to metal in a tendency to be sputtered as the positive ion.
Abstract:
A spectrometer having an electron beam generator for generating an electron beam that is directed at a sample. An electron beam positioner directs the electron beam onto a position of the sample, and thereby produces a secondary emitted stream from the sample, where the secondary emitted stream includes at least one of electrons and x-rays. An secondary emitted stream positioner positions the secondary emitted stream onto a detector array, which receives the secondary emitted stream and detects both the amounts and the received positions of the secondary emitted stream. A modulator modulates the electron beam that is directed onto the sample, and thereby sweeps the electron beam between a first position and a second position on the sample. An extractor is in signal communication with both the modulator and the detector array, and extracts a differential signal that represents a difference between the signals that are received from the first position and the signals that are received from the second position.
Abstract:
PROBLEM TO BE SOLVED: To provide an inspection method for obtaining information on the structure of a sample by using a particle beam, the inspection method obtaining information on the sample from electrons and X-rays emitted from the sample; and to provide an inspection device thereof. SOLUTION: The inspection method includes the steps of: focusing a particle beam onto a sample; operating at least one detector disposed adjacent to the sample; assigning detection signals generated by the at least one detector to different intensity intervals; determining, based on the detection signals assigned to the intensity intervals, at least one first signal component related to electrons incident on the detector; and determining, based on the detection signals assigned to the intensity intervals, at least one second signal component related to X-rays incident on the detector. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To solve a problem being unsuitable for use in an electron microscope, since conventional microscope slides are charged due to incidence of charged particle beams when it is observed in the electron microscope, in about a relation to the use of the optical microscope slide (10) in a charged particle device such as an electron microscope or a focused ion beam device. SOLUTION: However, a microscope slide coated with a conductive layer such as Indium Tin Oxide (ITO) exists. The microscope slide is normally used for heating an object mounted on it by flowing a current through the conductive layer. Experiments show that these microscope slides can be used advantageously in a charged particle device by connecting the conductive layer to ground potential, thereby forming a return path for the incident charged particles, thus preventing charging. Furthermore, the invention also relates to a charged particle device equipped with an optical microscope (130). COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
The method of measuring crystallographic orientations, crystal systems or the like of the surface of a specimen has steps of: irradiating the specimen with an ion beam; measuring the secondary electrons generated by the irradiation of the ion beam; repeating the irradiation of the ion beam and the measurement of the secondary electrons with each variation in an angle of incidence of the ion beam with respect to the specimen; and determining the crystalline state based on the variation in the amount of the secondary electrons corresponding to the variation of the angle of incidence.
Abstract:
An electron beam device is provided with an electron beam diffraction image analysis section (3) for calculation of the lattice distance from the diffraction image taken by a TV camera (10) for observation of the electron beam diffraction image, an EDX analysis section (9) for acquiring a composition of the material, a data base for retrieval of material characterization, and a material characterization section (4) having the data base retrieval function. The material characterization section characterizes the material by retrieving the retrieval data base, based upon the lattice distance data transferred from the electron beam diffraction image analysis section and the element data transferred from the EDX analysis section.
Abstract:
PROBLEM TO BE SOLVED: To inspect the position, number, size and the like of the microflaw in a solid material of every kind inclusive of a semiconductor device or a metal material at a high speed with special resolving power with a nanometer order. SOLUTION: A converged electron beam device is loaded with a positive electron irradiating function, and flaw position data, converged electron beam position data and the number of flaws or the size of a flaw are obtained from the detection data of γ rays generated by the pair extinction of electrons and positive electrons, and these two-dimensional distribution data are displayed on a monitor. COPYRIGHT: (C)2005,JPO&NCIPI