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公开(公告)号：KR1020090101365A
公开(公告)日：2009-09-25
申请号：KR1020097015978
申请日：2008-01-08
申请人： 스미또모 가가꾸 가부시끼가이샤
IPC分类号： C04B35/453 , C23C14/08 , C23C14/24 , H01B1/02
CPC分类号： C23C14/086 , C04B35/457 , C04B2235/3251 , C04B2235/3284 , C04B2235/3293 , C23C14/08
摘要： Disclosed is a material for transparent conductive films. This material for transparent conductive films is composed of a composite metal oxide containing Zn, Sn, O and at least one element selected from the group consisting of group 5-10 elements of the periodic table as a dopant element.
摘要翻译： 公开了用于透明导电膜的材料。 用于透明导电膜的材料由含有Zn，Sn，O的复合金属氧化物和选自元素周期表的5-10族元素中的至少一种元素组成，作为掺杂元素。
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公开(公告)号：KR1020160102215A
公开(公告)日：2016-08-29
申请号：KR1020167018633
申请日：2014-12-11
申请人： 스미또모 가가꾸 가부시끼가이샤
发明人： 하세가와아키라
CPC分类号： C23C16/50 , B32B7/02 , B32B27/08 , B32B27/28 , B32B2307/7242 , B32B2439/70 , C08J7/06 , C08J2367/02 , C23C16/401 , C23C16/42 , C23C16/45523 , C23C16/545 , B32B2307/72 , B32B2457/202 , B32B2457/206
摘要： 본발명의적층필름은, 기재와박막층을갖고, 박막층이하기조건 (i) (ii) (iii) 을만족하는적층필름이다. (i) 규소원자, 산소원자, 탄소원자및 수소원자를함유한다. (ii) 두께방향에있어서의각 원자의합계량에대한규소원자, 산소원자및 탄소원자의비율을나타내는규소분포곡선, 산소분포곡선및 탄소분포곡선에있어서, 각원자의분포곡선이각각연속이고, 탄소분포곡선이적어도 1 개의극값을갖는다. (iii) 1 층의박막층에있어서, 그층의내부는밀도가상이한복수층을구성하고, 각층의두께는, 층전체의두께에대해 10 % 이상의두께를갖고, 기재측에가장가까운층 A 의밀도 X 와, 가장밀도가높은층 B 의밀도 Y 가, 식 (1) 의관계를만족한다. X
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公开(公告)号：KR1020080113054A
公开(公告)日：2008-12-26
申请号：KR1020087024765
申请日：2007-03-15
申请人： 스미또모 가가꾸 가부시끼가이샤
CPC分类号： C23C14/086 , C01G9/02 , C01G19/00 , C01G19/02 , C01P2004/03 , C01P2006/40 , C23C14/3414
摘要： Disclosed is a transparent conductive film having excellent electrical conductivity and etching properties. Also disclosed is a method for producing the transparent conductive film. The transparent conductive film contains Zn, Sn and O, wherein the molar ratio of Zn to the sum total of Zn and Sn (Zn/(Zn+Sn)) is 0.41 to 0.55. The transparent conductive film is amorphous. The method comprises the step of spattering a sintered body (a target) in an inert gas atmosphere, wherein the sintered body contains Zn, Sn and O and the molar ratio of Zn to the sum total of Zn and Sn (Zn/(Zn+Sn)) in the sintered body is 0.53 to 0.65. ® KIPO & WIPO 2009
摘要翻译： 公开了具有优异的导电性和蚀刻性能的透明导电膜。 还公开了一种制造透明导电膜的方法。 透明导电膜含有Zn，Sn和O，其中Zn与Zn和Sn（Zn /（Zn + Sn））的总和的摩尔比为0.41〜0.55。 透明导电膜是无定形的。 该方法包括在惰性气体气氛中溅射烧结体（靶）的步骤，其中烧结体含有Zn，Sn和O，并且Zn与Zn和Sn（Zn /（Zn + Sn））为0.53〜0.65。 ®KIPO＆WIPO 2009
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公开(公告)号：KR1020090128411A
公开(公告)日：2009-12-15
申请号：KR1020097018767
申请日：2008-03-14
申请人： 스미또모 가가꾸 가부시끼가이샤
CPC分类号： C23C14/086 , C04B35/453 , C04B2235/3225 , C04B2235/3231 , C04B2235/3281 , C04B2235/3284 , C04B2235/3289 , C04B2235/3291 , C04B2235/3293 , C04B2235/3298
摘要： Disclosed are a material for transparent conductive film and a transparent conductive film. The material for transparent conductive film is composed of a composite metal oxide containing Zn, Sn, O and at least one element selected from the group consisting of Sc, Bi, Cu, Y, La, Ag and Au as a dopant.
摘要翻译： 公开了透明导电膜和透明导电膜的材料。 用于透明导电膜的材料由含有Zn，Sn，O和选自Sc，Bi，Cu，Y，La，Ag和Au中的至少一种元素作为掺杂剂的复合金属氧化物组成。
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公开(公告)号：KR1020090042254A
公开(公告)日：2009-04-29
申请号：KR1020097003090
申请日：2007-08-13
申请人： 스미또모 가가꾸 가부시끼가이샤
发明人： 하세가와아키라
CPC分类号： C23C14/08 , C03C17/2456 , C03C2217/212 , C03C2217/228 , C03C2217/23 , C03C2218/151 , C03C2218/154 , C04B35/01 , C04B35/462 , C04B35/64 , C04B35/6455 , C04B2235/3232 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/404 , C04B2235/428 , C04B2235/604 , C23C14/28 , C23C14/3414
摘要： Disclosed are a transparent conductive film having high conductivity and a method for producing such a transparent conductive film. Also disclosed are a sintered body for forming a transparent conductive film and a method for producing such a sintered body.The transparent conductive film contains Ga, Ti and O. Preferably, the transparent conductive film contains Ga, Ti and O in such amounts that the (molar) amount of Ti relative to the total (molar) amount of Ga and Ti is not less than 0.02 but not more than 0.98.
摘要翻译： 公开了具有高导电性的透明导电膜和制造这种透明导电膜的方法。 还公开了一种用于形成透明导电膜的烧结体和这种烧结体的制造方法。透明导电膜包含Ga，Ti和O.优选地，透明导电膜包含Ga，Ti和O， （摩尔）Ti相对于Ga和Ti的总量（摩尔）的量不小于0.02但不大于0.98。
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