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    ＡＩＮ 결정 기판의 제조 방법, ＡＩＮ 결정의 성장 방법 및 ＡＩＮ 결정 기판
    4.
    发明公开
    ＡＩＮ 결정 기판의 제조 방법, ＡＩＮ 결정의 성장 방법 및 ＡＩＮ 결정 기판 无效
    制造ALN晶体的基板的方法，ALN晶体的生长方法和ALN晶体的基板

    公开(公告)号：KR1020090029201A

    公开(公告)日：2009-03-20

    申请号：KR1020087030004

    申请日：2007-06-15

    申请人： 스미토모덴키고교가부시키가이샤

    发明人： 미즈하라나호 ,  가와세도모히로 ,  미야나가미치마사

    IPC分类号： H01L21/203 ,  H01L33/30

    CPC分类号： C30B29/403 ,  C30B23/02 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02631

    摘要： A process for producing a substrate of AlN crystal that realizes production of a large high-quality substrate of AlN crystal; a method of growing an AlN crystal that realizes growing of a large high-quality AlN crystal; and a substrate of AlN crystal consisting of AlN crystal grown by the growing method. There is provided a process for producing a substrate of AlN crystal, comprising the step of growing on a hetero-substrate an AlN crystal to a thickness of 0.4r or greater in which r means the diameter of the hetero-substrate according to a sublimation method and the step of forming a substrate of AlN crystal from a region of AlN crystal 200 mum or more apart from the hetero-substrate. Further, there is provided a method of growing an AlN crystal, comprising growing an AlN crystal on the substrate of AlN crystal produced by the above process according to a sublimation method, and provided a substrate of AlN crystal comprised of an AlN crystal grown by the growing method.

    摘要翻译： 一种制造AlN晶体的基板的方法，其实现了大量高质量的AlN晶体基板的制造; 生长AlN晶体的方法，其实现了大型高品质AlN晶体的生长; 以及通过生长方法生长的由AlN晶体组成的AlN晶体的衬底。 提供了一种制造AlN晶体的衬底的方法，包括在异质衬底上生长厚度为0.4r或更大的AlN晶体的步骤，其中r表示根据升华法的异质衬底的直径 以及从异质衬底的AlN晶体200μm以上的区域形成AlN晶体的衬底的工序。 此外，提供了一种生长AlN晶体的方法，其包括在根据升华方法的上述工艺生产的AlN晶体的衬底上生长AlN晶体，并且提供由AlN晶体生长的AlN晶体的衬底，AlN晶体由 生长方法。