公开(公告)号：US07875533B2

公开(公告)日：2011-01-25

申请号：US12368213

申请日：2009-02-09

申请人： John E. Epler ,  Paul S. Martin ,  Michael R. Krames

发明人： John E. Epler ,  Paul S. Martin ,  Michael R. Krames

IPC分类号： H01L21/20

CPC分类号： H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

摘要翻译： 在衬底上生长LED外延层（n型，p型和有源层）。 对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。 封装衬底提供电触头和导体，导致可焊接的封装连接。 然后除去生长底物。 因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。 然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。 通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高 层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

公开(公告)号：US07547908B2

公开(公告)日：2009-06-16

申请号：US11615834

申请日：2006-12-22

申请人： Patrick N. Grillot ,  Nathan F. Gardner ,  Werner K. Goetz ,  Linda T. Romano

发明人： Patrick N. Grillot ,  Nathan F. Gardner ,  Werner K. Goetz ,  Linda T. Romano

IPC分类号： H01L29/06

CPC分类号： H01L33/007 ,  H01L31/184

摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.

摘要翻译： 在III族氮化物发光器件中，包括发光层的器件层在设计成减小器件中特别是在发光层中的应变的模板上生长。 降低发光器件中的应变可以提高器件的性能。 模板可以在常规生长模板可获得的晶格常数的范围内扩展发光层中的晶格常数。 应变定义如下：给定层具有对应于与该层相同组成的自由材料的晶格常数的块状晶格常数吸收和对应于该层的晶格常数的面内晶格常数ain-平面 如在结构中生长。 一层中的应变量为|（ain-plane-abulk）| / abulk。 在一些实施方案中，发光层中的应变小于1％。