公开(公告)号：US08030111B2

公开(公告)日：2011-10-04

申请号：US12326355

申请日：2008-12-02

申请人： Mingching Wu ,  Hsueh-An Yang ,  Hung-Yi Lin ,  Weileun Fang

发明人： Mingching Wu ,  Hsueh-An Yang ,  Hung-Yi Lin ,  Weileun Fang

IPC分类号： H01L21/00

CPC分类号： B81C1/00301 ,  B81B2201/042 ,  B81B2207/097

摘要： A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.

摘要翻译： 提供了一种用于制造MEMS器件的方法。 该方法包括以下步骤：a）提供具有位于其上的凹面的第一基底，b）提供具有分别位于其上的连接区域和致动区域的第二基底，c）在致动区域中形成多个微结构，d） 在所述连接区域和所述致动区域中的元件，e）在所述导电元件上形成绝缘层，以及f）将所述第一基板连接到所述连接区域以形成所述MEMS器件。 凹面包含多个微结构。

公开(公告)号：US06949396B2

公开(公告)日：2005-09-27

申请号：US10187714

申请日：2002-07-01

申请人： Jerwei Hsieh ,  Weileun Fang

发明人： Jerwei Hsieh ,  Weileun Fang

IPC分类号： B81C1/00 ,  H01L21/00 ,  B82B1/00

CPC分类号： B81C1/00571

摘要： A corner-compensation method for fabricating MEMS (Micro-Electro-Mechanical System) is provided. The method includes steps of: (a) providing a substrate; (b) forming a conductive layer on the substrate; (c) sequentially forming a masking layer having structural openings and a photoresist layer on the conductive layer; (d) executing a photolithography for etching the photoresist layer and the masking layer to form at least one hole penetrating the photoresist layer and the masking layer; (e) etching the conductive layer and the substrate to extend the at least one hole to upper portions of the substrate; (f) removing the photoresist layer and etching the conductive layer and the substrate via the structural openings and the at least one hole respectively to form deep trench structures having different depths; (g) forming a peripheral compensation structure on a side-wall portion of the deep trench structure having the different depths; (h) removing portions of the peripheral compensation structure laterally and the substrate for exposing an uncompensated silicon structure; and (i) side etching the uncompensated silicon structure to be terminated by the peripheral compensation structure around the at least one hole.

摘要翻译： 提供了一种用于制造MEMS（微机电系统）的角补偿方法。 该方法包括以下步骤：（a）提供衬底; （b）在所述基板上形成导电层; （c）在所述导电层上依次形成具有结构开口的掩模层和光致抗蚀剂层; （d）执行光刻用于蚀刻光致抗蚀剂层和掩模层以形成穿透光致抗蚀剂层和掩模层的至少一个孔; （e）蚀刻所述导电层和所述基底以将所述至少一个孔延伸到所述基底的上部; （f）去除光致抗蚀剂层并分别经由结构开口和至少一个孔蚀刻导电层和基板以形成具有不同深度的深沟槽结构; （g）在具有不同深度的深沟槽结构的侧壁部分上形成外围补偿结构; （h）横向去除外围补偿结构的部分和用于暴露未补偿的硅结构的衬底; 和（i）侧面蚀刻由所述至少一个孔周围的外围补偿结构终止的未补偿硅结构。

公开(公告)号：US20050123017A1

公开(公告)日：2005-06-09

申请号：US10977044

申请日：2004-10-29

申请人： Long-Sun Huang ,  Chao-Sen Chang ,  Ta-Shun Chu ,  Son-Nan Chen

发明人： Long-Sun Huang ,  Chao-Sen Chang ,  Ta-Shun Chu ,  Son-Nan Chen

IPC分类号： H01S3/00 ,  H01S3/081 ,  H01S5/14

CPC分类号： H01S5/143 ,  H01S3/105 ,  H01S5/02284 ,  H01S5/1096

摘要： A tunable laser system is provided. The tunable laser system includes a light source, a grating, a corner mirror array, and a receiver. In which, the light source emits a beam, and the grating is located in front of the light source for reflecting the beam to form a first reflective beam. Also, the corner mirror array is located in front of the grating for receiving the first reflective beam and forms a second reflective beam accordingly. In addition, the receiver is used to receive a third reflective beam formed from reflecting the second reflective beam through the grating.

摘要翻译： 提供可调激光系统。 可调谐激光系统包括光源，光栅，角镜阵列和接收器。 其中，光源发射光束，并且光栅位于光源的前面，用于反射光束以形成第一反射光束。 此外，角镜阵列位于光栅的前面，用于接收第一反射光束并相应地形成第二反射光束。 此外，接收器用于接收通过将第二反射光束反射通过光栅而形成的第三反射光束。

公开(公告)号：US08318511B2

公开(公告)日：2012-11-27

申请号：US13343643

申请日：2012-01-04

申请人： Mingching Wu ,  Hsueh-An Yang ,  Hung-Yi Lin ,  Weileun Fang

发明人： Mingching Wu ,  Hsueh-An Yang ,  Hung-Yi Lin ,  Weileun Fang

IPC分类号： H01L31/26

CPC分类号： B81C1/00301 ,  B81B2201/042 ,  B81B2207/097

摘要： A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.

公开(公告)号：US20050215029A1

公开(公告)日：2005-09-29

申请号：US10972797

申请日：2004-10-25

申请人： Hsin-Ya Peng ,  Hsien-Lung Ho ,  Shih-Feng Shao

发明人： Hsin-Ya Peng ,  Hsien-Lung Ho ,  Shih-Feng Shao

IPC分类号： H01L21/44 ,  H01L21/50 ,  H01L21/68

CPC分类号： H01L21/6836 ,  H01L2221/68327

摘要： A method for fixing a wafer used in a manufacturing procedure is provided. The method includes steps of a) providing the wafer, a handling carrier, and a thermal release tape, wherein the wafer has a first and a second surfaces; b) adhering the thermal release tape between the first surface and the handling carrier for fixing the wafer on the handling carrier; c) performing the manufacturing procedure on the second surface; and d) separating the thermal release tape, the first surface and the handling carrier from one another above a specific temperature.

摘要翻译： 提供了一种用于固定制造过程中使用的晶片的方法。 该方法包括以下步骤：a）提供晶片，处理载体和热释放带，其中晶片具有第一和第二表面; b）将热释放带粘附在第一表面和处理载体之间，用于将晶片固定在处理载体上; c）在第二表面上执行制造程序; 以及d）将所述热释放带，所述第一表面和所述处理载体彼此隔开高于特定温度。

公开(公告)号：US20050205514A1

公开(公告)日：2005-09-22

申请号：US10933630

申请日：2004-09-03

申请人： Mingching Wu ,  Hung-Yi Lin ,  Weileun Fang

发明人： Mingching Wu ,  Hung-Yi Lin ,  Weileun Fang

IPC分类号： B44C1/22 ,  C23F1/00 ,  G02B26/08

CPC分类号： G02B26/0841

摘要： The optical microelectromechanical components and the fabrication method thereof are provided. The method for fabricating an optical microelectromechanical component includes steps of (a) providing a substrate; (b) depositing an oxide layer on the substrate as a first mask; (c) performing a plurality of first etchings on the substrate to form a plurality of trenches with a plurality of depths; (d) depositing a first polysilicon layer on the trenches to form refilled trenches.

摘要翻译： 提供了光学微机电部件及其制造方法。 制造光学微机电元件的方法包括以下步骤：（a）提供衬底; （b）在衬底上沉积氧化物层作为第一掩模; （c）在所述衬底上执行多个第一蚀刻以形成具有多个深度的多个沟槽; （d）在沟槽上沉积第一多晶硅层以形成再填充的沟槽。

公开(公告)号：US20040008926A1

公开(公告)日：2004-01-15

申请号：US10464958

申请日：2003-06-19

申请人： Walsin Lihwa Corp.

发明人： Hung-Yi Lin

IPC分类号： G02B006/35

CPC分类号： G02B6/3556 ,  G02B6/3512

摘要： A micromirror switch for implementing a light transmission is provided. The micromirror switch includes a first optical fiber array for transmitting a light ray from a first transmission position thereof, a first micromirror array for receiving the light ray from the first optical fiber array and sending out the light ray switched in a first specific direction, a second micromirror array for receiving the light ray from the first micromirror array and sending out the light ray switched in a second specific direction, and a second optical fiber array for receiving the light array from the second micromirror array and loading the light ray into a second transmission position of the second optical fiber array to complete the light transmission.

摘要翻译： 提供了用于实现光传输的微镜开关。 微镜开关包括用于从其第一透射位置传输光线的第​​一光纤阵列，用于从第一光纤阵列接收光线并发出沿第一特定方向切换的光线的第一微镜阵列， 第二微镜阵列，用于从第一微镜阵列接收光线并发出在第二特定方向上切换的光线;以及第二光纤阵列，用于从第二微镜阵列接收光阵列并将光线加载到第二微镜阵列中 第二光纤阵列的透射位置来完成光透射。

公开(公告)号：US09130122B2

公开(公告)日：2015-09-08

申请号：US14181738

申请日：2014-02-17

申请人： Industrial Technology Research Institute ,  WALSIN LIHWA Corp

发明人： Yi-Keng Fu ,  Chia-Lung Tsai ,  Hung-Tse Chen ,  Chih-Hsuen Chou

IPC分类号： H01L29/06 ,  H01L27/15 ,  H01L21/00 ,  H01L33/32 ,  H01L33/02 ,  H01L33/22

CPC分类号： H01L33/325 ,  H01L33/025 ,  H01L33/22

摘要： A light emitting diode (LED) including a first-type doped GaN substrate, a first-type doped semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode, and a second electrode is provided. The first-type doped GaN substrate has a first doped element. The first-type semiconductor layer is disposed on the first-type doped GaN substrate. The first-type semiconductor layer has a second doped element different from the first doped element, and the doped concentration of the second doped element—may have a peak from 3E18/cm3 to 1E20/cm3 at an interface between the first-type doped GaN substrate and the first-type semiconductor layer. The active layer is disposed on the first-type semiconductor layer, and the second-type semiconductor layer is disposed on the active layer. The first electrode and the second electrode are respectively disposed on the first-type doped GaN substrate and the second-type semiconductor layer. Other LEDs are also provided.

摘要翻译： 提供了包括第一类掺杂GaN衬底，第一类型掺杂半导体层，有源层，第二类型半导体层，第一电极和第二电极的发光二极管（LED）。 第一掺杂GaN衬底具有第一掺杂元素。 第一类型半导体层设置在第一种掺杂的GaN衬底上。 第一类型半导体层具有与第一掺杂元素不同的第二掺杂元素，并且第二掺杂元素的掺杂浓度可以在第一掺杂GaN的界面处具有3E18 / cm3至1E20 / cm3的峰值 衬底和第一类半导体层。 有源层设置在第一型半导体层上，第二类型半导体层设置在有源层上。 第一电极和第二电极分别设置在第一型掺杂GaN衬底和第二类型半导体层上。 还提供其他LED。

公开(公告)号：US07139110B2

公开(公告)日：2006-11-21

申请号：US10864182

申请日：2004-06-09

申请人： Long-Sun Huang ,  Yang-Lin Chen

发明人： Long-Sun Huang ,  Yang-Lin Chen

IPC分类号： G02B26/00

CPC分类号： G02B5/1857 ,  G02B26/0808

摘要： A grating manufactured by a micro-structure gap control technique is provided in this invention. The grating includes a first structural part, a second structural part and a substrate. The first structural part includes a first micro-structure and a concavity, the second structural part includes a second micro-structure and an island structure located within the concavity, wherein a gap exists between the inland structure and the concavity. Further, the substrate is bonded to the first structural part and the second structural part for supporting the first structural part and the second structural part.

摘要翻译： 本发明提供了通过微结构间隙控制技术制造的光栅。 光栅包括第一结构部件，第二结构部件和基板。 第一结构部分包括第一微结构和凹部，第二结构部分包括位于凹部内的第二微结构和岛状结构，其中在内部结构和凹部之间存在间隙。 此外，基板被结合到第一结构部件和用于支撑第一结构部件和第二结构部件的第二结构部件。

公开(公告)号：US20050035419A1

公开(公告)日：2005-02-17

申请号：US10864182

申请日：2004-06-09

申请人： Long-Sun Huang ,  Yang-Lin Chen

发明人： Long-Sun Huang ,  Yang-Lin Chen

IPC分类号： B81C1/00 ,  G02B5/18 ,  G02B26/08 ,  H01L21/00 ,  H01L27/14

CPC分类号： G02B5/1857 ,  G02B26/0808

摘要： A grating manufactured by a micro-structure gap control technique is provided in this invention. The grating includes a first structural part, a second structural part and a substrate. The first structural part includes a first micro-structure and a concavity, the second structural part includes a second micro-structure and an island structure located within the concavity, wherein a gap exists between the inland structure and the concavity. Further, the substrate is bonded to the first structural part and the second structural part for supporting the first structural part and the second structural part.

摘要翻译： 本发明提供了通过微结构间隙控制技术制造的光栅。 光栅包括第一结构部件，第二结构部件和基板。 第一结构部分包括第一微结构和凹部，第二结构部分包括位于凹部内的第二微结构和岛状结构，其中内部结构和凹部之间存在间隙。 此外，基板被结合到第一结构部件和用于支撑第一结构部件和第二结构部件的第二结构部件。