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公开(公告)号：US07247247B2
公开(公告)日：2007-07-24
申请号：US10839990
申请日：2004-05-06
IPC分类号： B81C1/00
CPC分类号： H02N1/008 , B81B2201/033 , B81C1/00595 , Y10S438/942
摘要： A selective etching method with lateral protection function is provided. The steps includes: (a) providing a substrate; (b) forming a plurality of tunnels; (c) forming a lateral strengthening structure at a peripheral wall of the tunnels; (d) removing a bottom portion of the lateral strengthening structure, and a part of the substrate by an etching process so as to form a lower structure and expose an unstrengthened structure; and (f) etching the unstrengthened structure laterally so as to form an upper structure.
摘要翻译： 提供了具有侧向保护功能的选择性蚀刻方法。 步骤包括：（a）提供基底; （b）形成多个隧道; （c）在隧道的周壁处形成横向加固结构; （d）通过蚀刻工艺去除侧向强化结构的底部和基底的一部分，以形成下部结构并暴露未加强的结构; 和（f）横向蚀刻非强化结构以形成上部结构。
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公开(公告)号：US06949396B2
公开(公告)日：2005-09-27
申请号：US10187714
申请日：2002-07-01
申请人： Jerwei Hsieh , Weileun Fang
发明人： Jerwei Hsieh , Weileun Fang
CPC分类号： B81C1/00571
摘要： A corner-compensation method for fabricating MEMS (Micro-Electro-Mechanical System) is provided. The method includes steps of: (a) providing a substrate; (b) forming a conductive layer on the substrate; (c) sequentially forming a masking layer having structural openings and a photoresist layer on the conductive layer; (d) executing a photolithography for etching the photoresist layer and the masking layer to form at least one hole penetrating the photoresist layer and the masking layer; (e) etching the conductive layer and the substrate to extend the at least one hole to upper portions of the substrate; (f) removing the photoresist layer and etching the conductive layer and the substrate via the structural openings and the at least one hole respectively to form deep trench structures having different depths; (g) forming a peripheral compensation structure on a side-wall portion of the deep trench structure having the different depths; (h) removing portions of the peripheral compensation structure laterally and the substrate for exposing an uncompensated silicon structure; and (i) side etching the uncompensated silicon structure to be terminated by the peripheral compensation structure around the at least one hole.
摘要翻译： 提供了一种用于制造MEMS（微机电系统）的角补偿方法。 该方法包括以下步骤：（a）提供衬底; （b）在所述基板上形成导电层; （c）在所述导电层上依次形成具有结构开口的掩模层和光致抗蚀剂层; （d）执行光刻用于蚀刻光致抗蚀剂层和掩模层以形成穿透光致抗蚀剂层和掩模层的至少一个孔; （e）蚀刻所述导电层和所述基底以将所述至少一个孔延伸到所述基底的上部; （f）去除光致抗蚀剂层并分别经由结构开口和至少一个孔蚀刻导电层和基板以形成具有不同深度的深沟槽结构; （g）在具有不同深度的深沟槽结构的侧壁部分上形成外围补偿结构; （h）横向去除外围补偿结构的部分和用于暴露未补偿的硅结构的衬底; 和（i）侧面蚀刻由所述至少一个孔周围的外围补偿结构终止的未补偿硅结构。
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公开(公告)号：US07180144B2
公开(公告)日：2007-02-20
申请号：US11129145
申请日：2005-05-13
申请人： Jerwei Hsieh , Weileun Fang
发明人： Jerwei Hsieh , Weileun Fang
CPC分类号： B81C1/00571
摘要： A corner-compensation method for fabricating MEMS (Micro-Electro-Mechanical System) is provided. The method includes steps of: (a) providing a substrate; (b) forming a conductive layer on the substrate; (c) sequentially forming a masking layer having structural openings and a photoresist layer on the conductive layer; (d) executing a photolithography for etching the photoresist layer and the masking layer to form at least one hole penetrating the photoresist layer and the masking layer; (e) etching the conductive layer and the substrate to extend the at least one hole to upper portions of the substrate; (f) removing the photoresist layer and etching the conductive layer and the substrate via the structural openings and the at least one hole respectively to form deep trench structures having different depths; (g) forming a peripheral compensation structure on a side-wall portion of the deep trench structure having the different depths; (h) removing portions of the peripheral compensation structure laterally and the substrate for exposing an uncompensated silicon structure; and (i) side etching the uncompensated silicon structure to be terminated by the peripheral compensation structure around the at least one hole.
摘要翻译： 提供了一种用于制造MEMS（微机电系统）的角补偿方法。 该方法包括以下步骤：（a）提供衬底; （b）在所述基板上形成导电层; （c）在所述导电层上依次形成具有结构开口的掩模层和光致抗蚀剂层; （d）执行光刻用于蚀刻光致抗蚀剂层和掩模层以形成穿透光致抗蚀剂层和掩模层的至少一个孔; （e）蚀刻所述导电层和所述基底以将所述至少一个孔延伸到所述基底的上部; （f）去除光致抗蚀剂层并分别经由结构开口和至少一个孔蚀刻导电层和基板以形成具有不同深度的深沟槽结构; （g）在具有不同深度的深沟槽结构的侧壁部分上形成外围补偿结构; （h）横向去除外围补偿结构的部分和用于暴露未补偿的硅结构的衬底; 和（i）侧面蚀刻由所述至少一个孔周围的外围补偿结构终止的未补偿硅结构。
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公开(公告)号：US07088030B2
公开(公告)日：2006-08-08
申请号：US10839844
申请日：2004-05-06
CPC分类号： H02N1/008 , B81B2201/033 , B81C1/00595 , Y10S438/942
摘要： A high-aspect-ratio-microstructure (HARM) is provided. The structure includes: a substrate; a lower structure with a comb shape fixedly mounted on said substrate and having first plural comb fingers, wherein each of the first plural comb fingers has a thin slot thereon; an upper structure with a comb shape having second plural comb fingers, wherein the lower structure and the upper structure have a height difference therebetween so as to form an uneven surface; and a lateral strengthening structure formed at vertically peripheral walls of the first plural comb fingers and the second plural comb fingers for protecting the plural first and second comb fingers.
摘要翻译： 提供了高纵横比微结构（HARM）。 该结构包括：基底; 具有固定地安装在所述基板上并具有第一多个梳齿的梳形的下部结构，其中所述第一多个梳齿中的每一个在其上具有薄的狭槽; 具有梳形的具有第二多个梳齿的上部结构，其中下部结构和上部结构之间具有高度差以形成不平坦表面; 以及形成在第一多个梳齿的垂直周壁上的横向加强结构和用于保护多个第一和第二梳齿的第二多个梳齿。
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公开(公告)号：US20050224449A1
公开(公告)日：2005-10-13
申请号：US11129145
申请日：2005-05-13
申请人： Jerwei Hsieh , Weileun Fang
发明人： Jerwei Hsieh , Weileun Fang
CPC分类号： B81C1/00571
摘要： A corner-compensation method for fabricating MEMS (Micro-Electro-Mechanical System) is provided. The method includes steps of: (a) providing a substrate; (b) forming a conductive layer on the substrate; (c) sequentially forming a masking layer having structural openings and a photoresist layer on the conductive layer; (d) executing a photolithography for etching the photoresist layer and the masking layer to form at least one hole penetrating the photoresist layer and the masking layer; (e) etching the conductive layer and the substrate to extend the at least one hole to upper portions of the substrate; (f) removing the photoresist layer and etching the conductive layer and the substrate via the structural openings and the at least one hole respectively to form deep trench structures having different depths; (g) forming a peripheral compensation structure on a side-wall portion of the deep trench structure having the different depths; (h) removing portions of the peripheral compensation structure laterally and the substrate for exposing an uncompensated silicon structure; and (i) side etching the uncompensated silicon structure to be terminated by the peripheral compensation structure around the at least one hole.
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公开(公告)号：US08436435B2
公开(公告)日：2013-05-07
申请号：US12844436
申请日：2010-07-27
申请人： Chun-Kai Chan , Weileun Fang
发明人： Chun-Kai Chan , Weileun Fang
IPC分类号： H01L29/84
CPC分类号： H04R19/005 , H04R19/04 , H04R2201/003
摘要： The present invention discloses an MEMS capacitive microphone including a rigid diaphragm arranged on an elastic element. When a sound wave acts on the rigid diaphragm, the rigid diaphragm is moved parallel to a normal of a back plate by elasticity of the elastic element. Thereby the variation of the capacitance is obtained between the rigid diaphragm and the back plate.
摘要翻译： 本发明公开了一种MEMS电容麦克风，其包括布置在弹性元件上的刚性隔膜。 当声波作用在刚性隔膜上时，刚性隔膜通过弹性元件的弹性平行于背板的法线移动。 从而在刚性隔膜和背板之间获得电容的变化。
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公开(公告)号：US20110179870A1
公开(公告)日：2011-07-28
申请号：US12692906
申请日：2010-01-25
申请人： Chun-Kai CHAN , Weileun Fang
发明人： Chun-Kai CHAN , Weileun Fang
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , G01P15/18 , G01P2015/0848
摘要： A dual-axis acceleration detection element comprises a first detection element, a second detection element and a stationary unit. The first detection element is movable relative to the second detection element. The second detection element is movable relative to the stationary unit. The relative movements take place on different axes to detect acceleration on two different axes. The first detection element and the second detection element are interposed by corresponding detection electrodes, and the second detection element and the stationary unit also are interposed by other corresponding detection electrodes. Hence when the relative movements occur among the first and second detection elements and the stationary unit, overlapped areas of the detection electrodes change to generate and output a capacitance difference, thereby acceleration alteration can be detected.
摘要翻译： 双轴加速度检测元件包括第一检测元件，第二检测元件和固定单元。 第一检测元件可相对于第二检测元件移动。 第二检测元件可相对于固定单元移动。 相对运动发生在不同的轴上以检测两个不同轴上的加速度。 第一检测元件和第二检测元件由相应的检测电极插入，第二检测元件和固定单元也被其它相应的检测电极插入。 因此，当在第一和第二检测元件和固定单元之间发生相对运动时，检测电极的重叠区域改变以产生并输出电容差，从而可以检测加速度变化。
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公开(公告)号：US07981329B2
公开(公告)日：2011-07-19
申请号：US12357039
申请日：2009-01-21
申请人： Chih-Chun Lee , Sheng-Yi Hsiao , Weileun Fang
发明人： Chih-Chun Lee , Sheng-Yi Hsiao , Weileun Fang
CPC分类号： B29D11/00009 , B29C39/006 , B29C39/26 , B29C41/12 , B29L2011/00
摘要： A method of manufacturing an optical component is provided. The method comprises steps of providing a first liquid; providing a fluid, disposed above the first liquid, wherein an interface exists between the first liquid and the fluid; providing a polymer precursor at the interface; and solidifying the polymer precursor so as to form the optical component made by a polymer.
摘要翻译： 提供了一种制造光学部件的方法。 该方法包括提供第一液体的步骤; 提供设置在所述第一液体上方的流体，其中在所述第一液体和所述流体之间存在界面; 在界面处提供聚合物前体; 并固化聚合物前体以形成由聚合物制成的光学部件。
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公开(公告)号：US07623303B2
公开(公告)日：2009-11-24
申请号：US11877421
申请日：2007-10-23
申请人： Weileun Fang , Sz-Yuan Lee , Hsi-Wen Tung , Wen-Chih Chen
发明人： Weileun Fang , Sz-Yuan Lee , Hsi-Wen Tung , Wen-Chih Chen
CPC分类号： G02B26/0866
摘要： A solid tunable micro optical device for an micro-optical system is provided. The sold tunable micro optical device includes a first annular piece, a micro-lens with a spherical surface configured on the first annular piece, and a deforming device coupled to the first annular piece for deforming the micro-lens.
摘要翻译： 提供了一种用于微光学系统的固体可调谐微型光学器件。 所销售的可调谐微型光学装置包括第一环形件，具有构造在第一环形件上的球形表面的微透镜，以及联接到第一环形件的变形装置，用于使微透镜变形。
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公开(公告)号：US20090090184A1
公开(公告)日：2009-04-09
申请号：US11944291
申请日：2007-11-21
申请人： Chuanwei WANG , Ming Han Tsai , Chih Ming Sun , Weileun Fang
发明人： Chuanwei WANG , Ming Han Tsai , Chih Ming Sun , Weileun Fang
IPC分类号： G01P15/13
CPC分类号： G01P15/125 , G01P15/18 , G01P2015/082 , G01P2015/084
摘要： An out-of-plane sensing device is provided. A proof mass is movable with respect to a substrate. A frame is positioned on the substrate and encloses the proof mass. At least one spring connects the proof mass to the frame so that the spring will exert a force on the proof mass to make the proof mass move back to its equilibrium position when the proof mass moves perpendicularly to the substrate. An electrode extends from the proof mass toward the frame. A counter electrode extends from the frame toward the proof mass, wherein the projection of the electrode onto the substrate overlaps with that of the counter electrode onto the substrate.
摘要翻译： 提供了一种平面外感测装置。 证明物质可相对于基底移动。 框架定位在基板上并包围检测质量块。 至少一个弹簧将检测质量块连接到框架上，使得弹簧将在证明物质上施加力，以使证明物质在垂直于基底移动时使证明物质移回到其平衡位置。 电极从防弹块向框架延伸。 反电极从框架朝向证明物质延伸，其中电极到基板上的突起与对电极的突起重叠在基板上。
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