公开(公告)号：US07526151B1

公开(公告)日：2009-04-28

申请号：US11778434

申请日：2007-07-16

申请人： Brent E. Little ,  Wei Chen ,  John V. Hryniewicz ,  Wenlu Chen ,  David M. Gill ,  Oliver King ,  Roy R. Davidson

发明人： Brent E. Little ,  Wei Chen ,  John V. Hryniewicz ,  Wenlu Chen ,  David M. Gill ,  Oliver King ,  Roy R. Davidson

IPC分类号： G02B6/12

CPC分类号： G02B6/136 ,  G03F1/00 ,  G03F7/0005 ,  G03F7/001

摘要： An intermediate structure used to form an integrated optics device comprising a substrate, a cladding on the substrate, at least one real waveguide on the cladding, and at least one dummy waveguide optically coupled with the real waveguide. The real waveguide forms a part of a predetermined planar lightwave circuit. The dummy waveguide does not form a part of the predetermined planar lightwave circuit.

摘要翻译： 一种用于形成集成光学器件的中间结构，包括衬底，衬底上的包层，包层上的至少一个真实波导以及与真实波导光耦合的至少一个虚拟波导。 真正的波导形成预定的平面光波电路的一部分。 虚拟波导不形成预定平面光波回路的一部分。

公开(公告)号：US06614977B2

公开(公告)日：2003-09-02

申请号：US09944207

申请日：2001-09-04

申请人： Frederick G. Johnson ,  Oliver S. King ,  John V. Hryniewicz ,  Lance G. Joneckis ,  Sai T. Chu ,  David M. Gill

发明人： Frederick G. Johnson ,  Oliver S. King ,  John V. Hryniewicz ,  Lance G. Joneckis ,  Sai T. Chu ,  David M. Gill

IPC分类号： G02B610

CPC分类号： C03C4/0042 ,  C03C17/3435 ,  C03C17/3482 ,  C03C2218/152 ,  C03C2218/33 ,  C23C16/308 ,  C23C16/401 ,  G02B6/132 ,  G02B2006/12097 ,  G02B2006/121

摘要： Devices and methods for the vapor deposition of amorphous, silicon-containing thin films using vapors comprised of deuterated species. Thin films grown on a substrate wafer by this method contain deuterium but little to no hydrogen. Optical devices comprised of optical waveguides formed using this method have significantly reduced optical absorption or loss in the near-infrared optical spectrum commonly used for optical communications, compared to the loss in waveguides formed in thin films grown using conventional vapor deposition techniques with hydrogen containing precursors. In one variation, the optical devices are formed on a silicon-oxide layer that is formed on a substrate, such as a silicon substrate. The optical devices of some variations are of the chemical species SiOxNy:D. Since the method of formation requires no annealing, the thin films can be grown on electronic and optical devices or portions thereof without damaging those devices.

公开(公告)号：US07468237B2

公开(公告)日：2008-12-23

申请号：US11850622

申请日：2007-09-05

申请人： Brent E. Little ,  John V. Hryniewicz ,  David M. Gill ,  Roy Davidson ,  Philippe P. Absil

发明人： Brent E. Little ,  John V. Hryniewicz ,  David M. Gill ,  Roy Davidson ,  Philippe P. Absil

IPC分类号： G03C5/00 ,  G02B6/10 ,  G02B6/12

CPC分类号： G03F7/70475 ,  G02B6/12007 ,  G02B6/13

摘要： A plurality of mask images defines an optical circuit image in photoresist. Each of the mask images comprises parts of the optical circuit and the totality of all mask images together defines an optical circuit. The optical circuit is thus made up of plural optical elements some of which may be positioned in drop-in locations within the boundary of another optical circuit element. A photolithography system globally aligns and exposes the mask images in photoresist. The resultant composite image is substantially indistinguishable from a single image of the entire optical circuit. Different images for each of the mask image parts can be substituted with other images or image parts and thereby exponentially increasing the number of circuit permutations from a predetermined number of available mask images. A unique optical circuit, for example, can be generated from a pre-existing library of reticle images. The images are printed in predetermined locations on a substrate to define the desired optical circuit. Thus, predefined second optical circuit elements can be dropped in (imaged or exposed) locations within a first optical circuit.

摘要翻译： 多个掩模图像限定光致抗蚀剂中的光电路图像。 每个掩模图像包括光电路的部分，并且所有掩模图像的总体一起限定光学电路。 因此，光电路由多个光学元件组成，其中一些可以位于另一光电元件的边界内的落入位置。 光刻系统全面地对准和曝光光致抗蚀剂中的掩模图像。 所得到的合成图像与整个光学电路的单个图像基本上是不可区分的。 用于每个掩模图像部分的不同图像可以用其他图像或图像部分代替，从而从预定数量的可用掩模图像指数地增加电路排列的数量。 例如，可以从预先存在的标线图像库生成独特的光学电路。 图像被印刷在基板上的预定位置以限定所需的光学电路。 因此，预定义的第二光学电路元件可以落在第一光学电路内的（成像或暴露的）位置。

公开(公告)号：US06768828B2

公开(公告)日：2004-07-27

申请号：US10441052

申请日：2003-05-20

申请人： David M. Gill ,  Oliver S. King ,  Frederick G. Johnson

发明人： David M. Gill ,  Oliver S. King ,  Frederick G. Johnson

IPC分类号： G02B636

CPC分类号： G02B6/12007 ,  G02B6/13 ,  G02B2006/121

摘要： The integrated optical circuit of the present invention includes a substrate with a first cladding layer. A first core layer having one or more waveguiding elements is formed on the first cladding layer. A second cladding layer surrounds the waveguiding elements of the first core layer; the refractive index of the first and second cladding layers are selected to be less than the refractive index of the waveguiding element(s). Through simultaneous cladding material deposition and cladding material removal, the second cladding layer as deposited is substantially self-planarized, enabling further layers to be positioned on the second cladding layer without necessitating intermediate planarization. Further, the present invention permits planar waveguide cores having submicron core spacings to be covered by a subsequently-deposited cladding layer without cladding gaps, seams or other deleterious cladding defects.

摘要翻译： 本发明的集成光电路包括具有第一包层的基板。 具有一个或多个波导元件的第一芯层形成在第一覆层上。 第二覆层围绕第一芯层的波导元件; 选择第一和第二包覆层的折射率小于波导元件的折射率。 通过同时包覆材料沉积和包层材料去除，沉积的第二包覆层基本上是自平坦化的，使得能够将另外的层定位在第二覆层上，而不需要中间平面化。 此外，本发明允许具有亚微米核间距的平面波导芯被随后沉积的包层覆盖，而没有包层间隙，接缝或其它有害的包层缺陷。

公开(公告)号：US07043133B2

公开(公告)日：2006-05-09

申请号：US10864511

申请日：2004-06-10

申请人： Frederick G. Johnson ,  Oliver S. King ,  David M. Gill ,  Timothy J. Davidson ,  Warren P. Berk

发明人： Frederick G. Johnson ,  Oliver S. King ,  David M. Gill ,  Timothy J. Davidson ,  Warren P. Berk

IPC分类号： G02B6/00 ,  G02B6/10 ,  C03B37/23 ,  C03B37/22

CPC分类号： C03C4/0042 ,  C03C17/3435 ,  C03C17/3482 ,  C03C2218/152 ,  C03C2218/33 ,  C23C16/308 ,  C23C16/401 ,  G02B6/132 ,  G02B2006/12097 ,  G02B2006/121

摘要： Silicon-oxycarbide optical waveguides and thermooptic devices include a substrate and a first cladding layer having a first refractive index positioned over a substrate. A first core layer comprising silicon, oxygen, and carbon and having a core refractive index is formed on the first cladding layer by chemical vapor deposition using at least two precursors: one inorganic silicon precursor gas and at least one second precursor gas comprising carbon and oxygen. Alternatively, at least three precursors can be used: one inorganic silicon precursor gas, a second precursor comprising carbon, and a third precursor comprising oxygen. The core layer is lithographically patterned to define waveguide elements. A second cladding layer having a second cladding refractive index is formed to surround the optical core waveguiding element of the first core layer.

摘要翻译： 硅碳氧化物光波导和热光器件包括基板和具有位于基板上的第一折射率的第一包层。 通过使用至少两种前体的化学气相沉积在第一包覆层上形成包括硅，氧和碳并具有纤芯折射率的第一芯层：一种无机硅前体气体和至少一种包含碳和氧的第二前体气体 。 或者，可以使用至少三种前体：一种无机硅前体气体，包含碳的第二前体和包含氧的第三前体。 核心层被光刻图案化以限定波导元件。 形成具有第二包层折射率的第二覆层，以包围第一芯层的光纤波导元件。

公开(公告)号：US06949392B2

公开(公告)日：2005-09-27

申请号：US10837685

申请日：2004-05-04

申请人： David M. Gill ,  Frederick G Johnson ,  Oliver S. King

发明人： David M. Gill ,  Frederick G Johnson ,  Oliver S. King

IPC分类号： G02B6/12 ,  G02B6/13 ,  H01L21/469 ,  C23C16/40

CPC分类号： G02B6/12007 ,  G02B6/13 ,  G02B2006/121

摘要： The integrated optical circuit of the present invention includes a substrate with a first cladding layer. A first core layer having one or more waveguiding elements is formed on the first cladding layer. A second cladding layer surrounds the waveguiding elements of the first core layer; the refractive index of the first and second cladding layers are selected to be less than the refractive index of the waveguiding element(s). Through simultaneous cladding material deposition and cladding material removal, the second cladding layer as deposited is substantially self-planarized, enabling further layers to be positioned on the second cladding layer without necessitating intermediate planarization. Further, the present invention permits planar waveguide cores having submicron core spacings to be covered by a subsequently-deposited cladding layer without cladding gaps, seams or other deleterious cladding defects.

摘要翻译： 本发明的集成光电路包括具有第一包层的基板。 具有一个或多个波导元件的第一芯层形成在第一覆层上。 第二覆层围绕第一芯层的波导元件; 选择第一和第二包覆层的折射率小于波导元件的折射率。 通过同时包覆材料沉积和包层材料去除，沉积的第二包覆层基本上是自平坦化的，使得能够将另外的层定位在第二覆层上，而不需要中间平面化。 此外，本发明允许具有亚微米核间距的平面波导芯被随后沉积的包层覆盖，而没有包层间隙，接缝或其它有害的包层缺陷。

公开(公告)号：US07282311B2

公开(公告)日：2007-10-16

申请号：US10921645

申请日：2004-08-19

申请人： Brent Everett Little ,  John V. Hryniewicz ,  David M. Gill ,  Roy Davidson ,  Philippe Patrick Absil

发明人： Brent Everett Little ,  John V. Hryniewicz ,  David M. Gill ,  Roy Davidson ,  Philippe Patrick Absil

IPC分类号： G03C5/00 ,  G03F9/00

CPC分类号： G03F7/70475 ,  G02B6/12007 ,  G02B6/13

摘要： A method is disclosed for forming an optical circuit on a substrate. The method includes the deployment of a plurality of mask images to define an optical circuit image in photoresist. Each of the mask images define parts of the optical circuit and the totality of all mask images substantially define an optical circuit. A photolithography system globally aligns and exposes the mask images in photoresist. The resultant composite image is substantially indistinguishable from a single image of the entire optical circuit. Different images for each of the mask image parts can be substituted with other images or image parts and thereby exponentially increasing the number of circuit permutations from a predetermined number of available mask images. The method is also applicable to generating a unique optical circuit from a pre-existing library of reticle images. The images are printed in predetermined locations on a substrate to define the desired optical circuit.

摘要翻译： 公开了一种在基板上形成光电路的方法。 该方法包括部署多个掩模图像以限定光致抗蚀剂中的光电路图像。 每个掩模图像限定光学电路的部分，并且所有掩模图像的总体基本上限定光学电路。 光刻系统全面地对准和曝光光致抗蚀剂中的掩模图像。 所得到的合成图像与整个光学电路的单个图像基本上是不可区分的。 用于每个掩模图像部分的不同图像可以用其他图像或图像部分代替，从而从预定数量的可用掩模图像指数地增加电路排列的数量。 该方法还适用于从预先存在的标线图像库生成独特的光学电路。 图像被印刷在基板上的预定位置以限定所需的光学电路。

公开(公告)号：US06771868B2

公开(公告)日：2004-08-03

申请号：US10465881

申请日：2003-06-20

申请人： Frederick G. Johnson ,  Oliver S. King ,  John V. Hryniewicz ,  Lance G. Joneckis ,  Sai T. Chu ,  David M. Gill

发明人： Frederick G. Johnson ,  Oliver S. King ,  John V. Hryniewicz ,  Lance G. Joneckis ,  Sai T. Chu ,  David M. Gill

IPC分类号： G02B610

CPC分类号： C03C4/0042 ,  C03C17/3435 ,  C03C17/3482 ,  C03C2218/152 ,  C03C2218/33 ,  C23C16/308 ,  C23C16/401 ,  G02B6/132 ,  G02B2006/12097 ,  G02B2006/121

摘要： Devices and methods for the vapor deposition of amorphous, silicon-containing thin films using vapors comprised of deuterated species. Thin films grown on a substrate wafer by this method contain deuterium but little to no hydrogen. Optical devices comprised of optical waveguides formed using this method have significantly reduced optical absorption or loss in the near-infrared optical spectrum commonly used for optical communications, compared to the loss in waveguides formed in thin films grown using conventional vapor deposition techniques with hydrogen containing precursors. In one variation, the optical devices are formed on a silicon-oxide layer that is formed on a substrate, such as a silicon substrate. The optical devices of some variations are of the chemical species SiOxNy:D. Since the method of formation requires no annealing, the thin films can be grown on electronic and optical devices or portions thereof without damaging those devices.

摘要翻译： 使用由氘化物质组成的蒸气蒸发淀积无定形含硅薄膜的装置和方法。 通过该方法在衬底晶片上生长的薄膜含有氘，但几乎没有氢。 与使用常规的具有含氢前体的气相沉积技术生长的薄膜中形成的波导的损耗相比，使用该方法形成的光波导的光学器件相比，通常用于光通信的近红外光谱中的光吸收或损耗显着降低 。 在一个变型中，光学器件形成在形成在诸如硅衬底的衬底上的氧化硅层上。 一些变化的光学器件是化学物质SiO x N y：D。 由于形成方法不需要退火，所以可以在电子和光学器件或其部分上生长薄膜，而不会损坏这些器件。