-
公开(公告)号：US07524765B2
公开(公告)日：2009-04-28
申请号：US11266131
申请日：2005-11-02
申请人： Juan E. Dominquez , Adrien R. Lavoie , Harsono S. Simka , John Plombon , David M. Thompson , John D. Peck
发明人： Juan E. Dominquez , Adrien R. Lavoie , Harsono S. Simka , John Plombon , David M. Thompson , John D. Peck
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/045 , C23C16/45525 , C23C16/45529 , H01L21/76843 , H01L21/76846 , H01L21/76864
摘要： A method comprising introducing an organometallic precursor according to a first set of conditions in the presence of a substrate; introducing the organometallic precursor according to a different second set of conditions in the presence of the substrate; and forming a layer comprising a moiety of the organometallic precursor on the substrate according to an atomic layer deposition process. A system comprising a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor comprising a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures formed in a plurality of dielectric layers formed on the substrate and each of the plurality of interconnect structures separated from the plurality of dielectric layers by a barrier layer formed according to an atomic layer deposition process.
摘要翻译： 一种方法，包括在底物存在下根据第一组条件引入有机金属前体; 在基材存在下根据不同的第二组条件引入有机金属前体; 并且根据原子层沉积工艺在基底上形成包含有机金属前体的部分的层。 一种包括计算设备的系统，包括微处理器，所述微处理器耦合到印刷电路板，所述微处理器包括具有多个电路器件的衬底，所述电路器件具有通过形成在多个电介质层中的互连结构而形成于所述多个电路器件的电连接 形成在所述基板上，并且所述多个互连结构中的每一个通过根据原子层沉积工艺形成的阻挡层与所述多个电介质层分离。
-
2.发明申请ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开有机化合物，其制备方法及其使用方法公开(公告)号：US20090203917A1
公开(公告)日：2009-08-13
申请号：US12352202
申请日：2009-01-12
IPC分类号： C07F15/00
CPC分类号： C07F15/0046
摘要： This invention relates to organometallic compounds having the formula L1ML2 wherein M is a metal or metalloid, L1 is a substituted or unsubstituted 6 electron donor anionic ligand, and L2 is a substituted or unsubstituted 6 electron donor anionic ligand, wherein L1 and L2 are the same or different, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
摘要翻译： 本发明涉及具有式L1ML2的有机金属化合物，其中M是金属或准金属，L1是取代或未取代的6电子给体阴离子配体，L2是取代或未取代的6电子给体阴离子配体，其中L1和L2相同 或不同的制备有机金属化合物的方法，以及由有机金属化合物制备膜或涂层的方法。 有机金属化合物可用作半导体应用，作为用于膜沉积的化学蒸气或原子层沉积前体。
-
3.发明申请ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开有机化合物，其制备方法及其使用方法公开(公告)号：US20090199739A1
公开(公告)日：2009-08-13
申请号：US12352289
申请日：2009-01-12
CPC分类号： C07F15/0053 , C08K5/56 , C09D1/00 , C09D7/63 , C23C16/18
摘要： This invention relates to organometallic compounds having the formula (L1)yM(L2)z wherein M is a metal or metalloid, L1 is the same or different and is (i) a substituted or unsubstituted anionic 4 electron donor ligand or (ii) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand or (ii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 2; and z is an integer of from 0 to 2; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
摘要翻译： 本发明涉及具有式（L1）yM（L2）z的有机金属化合物，其中M是金属或准金属，L1相同或不同，并且是（i）取代或未取代的阴离子4电子给体配体或（ii） 取代或未取代的阴离子4电子给体配体与侧挂中性2电子供体部分，L2相同或不同，为（i）取代或未取代的阴离子2电子供体配体或（ii）取代或未取代的中性2电子给体配体 ; y是2的整数; z为0〜2的整数; 并且其中M的氧化数和L1和L2的电荷之和等于0; 一种生产有机金属化合物的方法，以及由有机金属化合物制备薄膜或涂层的方法。 有机金属化合物可用作半导体应用，作为用于膜沉积的化学蒸气或原子层沉积前体。
-
4.发明申请公开(公告)号：US20090205968A1
公开(公告)日：2009-08-20
申请号：US12352269
申请日：2009-01-12
CPC分类号： C07F15/0053 , C08K5/56 , C09D1/00 , C09D7/63 , C23C16/18
摘要： This invention relates to organometallic compounds having the formula (L1)M(L2)y wherein M is a metal or metalloid, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted anionic 4 electron donor ligand, (iii) a substituted or unsubstituted neutral 2 electron donor ligand, or (iv) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety; and y is an integer of from 1 to 3; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
-
5.发明申请公开(公告)号：US20090205538A1
公开(公告)日：2009-08-20
申请号：US12352239
申请日：2009-01-12
CPC分类号： C07F15/0046
摘要： This invention relates to organometallic compounds having the formula (L1)M(L2)y wherein M is a metal or metalloid, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted anionic 4 electron donor ligand, (iii) a substituted or unsubstituted neutral 2 electron donor ligand, or (iv) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety; and y is an integer of from 1 to 3; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
-
6.发明申请公开(公告)号：US20090203928A1
公开(公告)日：2009-08-13
申请号：US12352302
申请日：2009-01-12
IPC分类号： C07F15/00
CPC分类号： C07F15/0046
摘要： This invention relates to organometallic compounds having the formula (L1)yM(L2)z wherein M is a metal or metalloid, L1 is the same or different and is (i) a substituted or unsubstituted anionic 4 electron donor ligand or (ii) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand or (ii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 2; and z is an integer of from 0 to 2; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
-
7.发明申请公开(公告)号：US20090202740A1
公开(公告)日：2009-08-13
申请号：US12352212
申请日：2009-01-12
CPC分类号： C07F15/0046
摘要： This invention relates to organometallic compounds having the formula L1ML2 wherein M is a metal or metalloid, L1 is a substituted or unsubstituted 6 electron donor anionic ligand, and L2 is a substituted or unsubstituted 6 electron donor anionic ligand, wherein L1 and L2 are the same or different, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.014 秒)
