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    Photomasks, Methods of Fabricating the Photomasks, and Method of Fabricating Semiconductor Devices by Using the Photomasks
    4.
    发明申请
    Photomasks, Methods of Fabricating the Photomasks, and Method of Fabricating Semiconductor Devices by Using the Photomasks 有权
    光掩模，光掩模的制造方法以及使用光掩模制造半导体器件的方法

    公开(公告)号：US20160048073A1

    公开(公告)日：2016-02-18

    申请号：US14700175

    申请日：2015-04-30

    Applicant: Jung-hwan Lee ,  Byung-gook Kim ,  Sang-hyeon Lee

    Inventor： Jung-hwan Lee ,  Byung-gook Kim ,  Sang-hyeon Lee

    IPC: G03F1/76 ,  G03F1/72 ,  G03F1/74 ,  G03F1/78

    CPC classification number: G03F1/74 ,  G03F1/72

    Abstract: Provided are photomasks, methods of fabricating the photomasks, and methods of fabricating a semiconductor device by using the photomasks, in which a critical dimension (CD) of a pattern of a specific region of the photomask is corrected to improve the distribution of CDs of the pattern formed on a wafer. The photomasks may include a substrate and a light-blocking pattern formed on the substrate that includes an absorber layer and an anti-reflection coating (ARC) layer. The light-blocking pattern may include at least one of a first corrected area in which a top surface of the absorber layer is exposed, and a second corrected area in which a correction layer is formed on the ARC layer.

    Abstract translation: 提供光掩模，制造光掩模的方法以及通过使用光掩模制造半导体器件的方法，其中校正光掩模的特定区域的图案的临界尺寸（CD）以改善光掩模的CD的分布 图案形成在晶片上。 光掩模可以包括衬底和形成在衬底上的遮光图案，其包括吸收层和抗反射涂层（ARC）层。 遮光图案可以包括其中暴露吸收层的顶表面的第一校正区域和其中在ARC层上形成校正层的第二校正区域中的至少一个。

    Computer providing motion picture mode and method of setting up system-mode while playing motion pictures
    6.
    发明授权
    Computer providing motion picture mode and method of setting up system-mode while playing motion pictures 有权
    计算机提供运动图像模式和播放动态影像时设置系统模式的方法

    公开(公告)号：US08751840B2

    公开(公告)日：2014-06-10

    申请号：US12249670

    申请日：2008-10-10

    Applicant: Jung-Hwan Lee

    Inventor： Jung-Hwan Lee

    IPC: G06F1/00

    CPC classification number: G06F1/3203 ,  G06F1/3246 ,  G06F1/3287 ,  Y02D10/171

    Abstract: The present invention relates to a computer providing a motion picture mode including at least one storage unit configured to store system state information when the computer enters the motion picture mode and to store motion picture data, the storage unit including a random access memory (RAM) and a hard disk drive (HDD), a graphic processing unit configured to process image data and to display processed data on a screen, an audio outputting unit configured to process and output audio signals, and a control unit configured to control modules included in the computer and a system mode of the computer. The control unit is configured to determine whether conditions for entering the motion picture mode have been satisfied, and to change the system mode to the motion picture mode if the conditions for the motion picture mode are satisfied.

    Abstract translation: 本发明涉及一种提供运动图像模式的计算机，包括：至少一个存储单元，被配置为当计算机进入运动图像模式时存储系统状态信息并存储运动图像数据，该存储单元包括随机存取存储器（RAM） 以及硬盘驱动器（HDD），被配置为处理图像数据并在屏幕上显示处理数据的图形处理单元，被配置为处理和输出音频信号的音频输出单元，以及控制单元， 计算机和计算机的系统模式。 控制单元被配置为确定是否满足输入运动图像模式的条件，并且如果满足运动图像模式的条件，则将系统模式改变为运动图像模式。

    Semiconductor device and method for driving the same
    7.
    发明授权
    Semiconductor device and method for driving the same 有权
    半导体装置及其驱动方法

    公开(公告)号：US08686786B2

    公开(公告)日：2014-04-01

    申请号：US13588795

    申请日：2012-08-17

    Applicant: Mun-Phil Park ,  Jung-Hwan Lee

    Inventor： Mun-Phil Park ,  Jung-Hwan Lee

    IPC: H01H37/76

    CPC classification number: G11C11/4074 ,  G11C17/16 ,  G11C17/18

    Abstract: A semiconductor device includes: a first driving voltage generation unit configured to generate a first driving voltage; a fuse unit coupled between an output node for receiving the first driving voltage and a fuse state sensing node; a driving unit configured to drive the fuse state sensing node with a second driving voltage in response to a control signal; a voltage level control unit configured to generate a voltage level control signal in response to a fuse state sensing signal that corresponds to a voltage level of the fuse state sensing node; and a second driving voltage generation unit configured to control and output a voltage level of the second driving voltage in response to the voltage level control signal. The semiconductor device repeatedly performs a rupture operation by monitoring a fuse state sensing signal.

    Abstract translation: 半导体器件包括：第一驱动电压生成单元，被配置为产生第一驱动电压; 熔丝单元，其耦合在用于接收第一驱动电压的输出节点和熔丝状态感测节点之间; 驱动单元，被配置为响应于控制信号以第二驱动电压驱动所述熔丝状态感测节点; 电压电平控制单元，被配置为响应于对应于熔丝状态感测节点的电压电平的熔丝状态感测信号而产生电压电平控制信号; 以及第二驱动电压生成单元，被配置为响应于所述电压电平控制信号来控制和输出所述第二驱动电压的电压电平。 半导体器件通过监视熔丝状态感测信号来重复进行断裂操作。

    Semiconductor memory device and operating method thereof
    9.
    发明授权
    Semiconductor memory device and operating method thereof 有权
    半导体存储器件及其操作方法

    公开(公告)号：US08576600B2

    公开(公告)日：2013-11-05

    申请号：US13420038

    申请日：2012-03-14

    Applicant: Jung Hwan Lee ,  Seong Je Park ,  Ji Hwan Kim ,  Myung Cho ,  Beom Seok Hah

    Inventor： Jung Hwan Lee ,  Seong Je Park ,  Ji Hwan Kim ,  Myung Cho ,  Beom Seok Hah

    IPC: G11C15/00

    CPC classification number: G11C15/046 ,  G11C16/10

    Abstract: A semiconductor memory device includes a memory array configured to include memory cells for storing input data and Code Address Memory (CAM) cells for storing setting data used to set an operation condition; an operation circuit configured to perform a CAM read operation by supplying a read voltage to the CAM cells, perform a test operation for detecting unstable CAM cells in each of which a difference between a threshold voltage and the read voltage is smaller than a permitted limit, from among the CAM cells, and perform an erase operation or a program operation for the unstable CAM cells; and a controller configured to control the operation circuit so that the program operation for storing the setting data in the unstable CAM cells is performed if the number of unstable CAM cells detected in the test operation is greater than a permitted value.

    Abstract translation: 半导体存储器件包括：存储器阵列，被配置为包括用于存储输入数据的存储器单元和用于存储用于设置操作条件的设置数据的代码地址存储器（CAM）单元; 配置为通过向CAM单元提供读取电压来执行CAM读取操作的操作电路，执行用于检测阈值电压和读取电压之间的差小于允许极限的不稳定的CAM单元的测试操作， 从CAM单元中进行擦除操作或对不稳定的CAM单元的编程动作; 以及控制器，其被配置为如果在测试操作中检测到​​的不稳定的CAM单元的数量大于允许值，则执行用于将设置数据存储在不稳定的CAM单元中的程序操作。

    SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME
    10.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME 有权
    半导体器件及其驱动方法

    公开(公告)号：US20130257520A1

    公开(公告)日：2013-10-03

    申请号：US13588795

    申请日：2012-08-17

    Applicant: Mun-Phil PARK ,  Jung-Hwan LEE

    Inventor： Mun-Phil PARK ,  Jung-Hwan LEE

    IPC: G11C17/14

    CPC classification number: G11C11/4074 ,  G11C17/16 ,  G11C17/18

    Abstract: A semiconductor device includes: a first driving voltage generation unit configured to generate a first driving voltage; a fuse unit coupled between an output node for receiving the first driving voltage and a fuse state sensing node; a driving unit configured to drive the fuse state sensing node with a second driving voltage in response to a control signal; a voltage level control unit configured to generate a voltage level control signal in response to a fuse state sensing signal that corresponds to a voltage level of the fuse state sensing node; and a second driving voltage generation unit configured to control and output a voltage level of the second driving voltage in response to the voltage level control signal. The semiconductor device repeatedly performs a rupture operation by monitoring a fuse state sensing signal.

    Abstract translation: 半导体器件包括：第一驱动电压生成单元，被配置为产生第一驱动电压; 熔丝单元，其耦合在用于接收第一驱动电压的输出节点和熔丝状态感测节点之间; 驱动单元，被配置为响应于控制信号以第二驱动电压驱动所述熔丝状态感测节点; 电压电平控制单元，被配置为响应于对应于熔丝状态感测节点的电压电平的熔丝状态感测信号而产生电压电平控制信号; 以及第二驱动电压生成单元，被配置为响应于电压电平控制信号来控制和输出第二驱动电压的电压电平。 半导体器件通过监视熔丝状态感测信号来重复进行断裂操作。

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