利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

3 条记录 (耗时 0.013 秒)

    Corona preionization electrode unit for use in gas laser apparatus
    1.
    发明授权
    Corona preionization electrode unit for use in gas laser apparatus 有权
    用于气体激光装置的电晕前置电极单元

    公开(公告)号：US06654402B1

    公开(公告)日：2003-11-25

    申请号：US09626417

    申请日：2000-07-26

    申请人： Koji Kakizaki ,  Kazuaki Hotta ,  Motohiro Arai

    发明人： Koji Kakizaki ,  Kazuaki Hotta ,  Motohiro Arai

    IPC分类号： H01S3097

    CPC分类号： H01S3/0385 ,  H01S3/0384 ,  H01S3/09713

    摘要： A corona preionization electrode unit for use in gas laser apparatus, wherein the electric field for corona discharge is concentrated, and ultraviolet radiation is not blocked, and further the laser gas stream is not obstructed, thereby allowing efficient, stable and uniform corona preionization. The corona preionization electrode unit is disposed in a gas laser apparatus together with a pair of main discharge electrodes for ionizing and exciting a laser gas. The corona preionization electrode unit includes a first electrode covered with a dielectric material and a second electrode placed in contact with the outer surface of the dielectric material around the first electrode. The corona preionization electrode unit is positioned in the vicinity of either one of the main discharge electrodes. The second electrode is a plate-shaped member having a straight edge contacting at least the outer surface of the dielectric material. A portion of the plate-shaped member other than the edge is provided with a plurality of openings for passage of ultraviolet light for preionization and a circulating laser gas.

    摘要翻译： 一种用于气体激光装置的电晕前置电极单元，其中用于电晕放电的电场集中，并且紫外线辐射不被阻挡，并且进一步激光气流不被阻挡，由此允许有效，稳定和均匀的电晕预电离。 电晕前置电极单元与一对用于电离和激发激光气体的主放电电极一起设置在气体激光装置中。 电晕前置电极单元包括覆盖有介电材料的第一电极和与第一电极周围的电介质材料的外表面接触的第二电极。 电晕前置电极单元位于任一个主放电电极附近。 第二电极是具有与电介质材料的至少外表面接触的直边缘的板状构件。 除了边缘之外的板状构件的一部分设置有多个用于前体的紫外线通过的开口和循环的激光气体。

    Wavelength monitoring apparatus for laser light for semiconductor exposure
    2.
    发明授权
    Wavelength monitoring apparatus for laser light for semiconductor exposure 失效
    用于半导体曝光的激光用波长监视装置

    公开(公告)号：US06509970B1

    公开(公告)日：2003-01-21

    申请号：US09599289

    申请日：2000-06-21

    申请人： Kyohei Seki ,  Kazuaki Hotta ,  Takao Kobayashi

    发明人： Kyohei Seki ,  Kazuaki Hotta ,  Takao Kobayashi

    IPC分类号： G01B902

    CPC分类号： G01J9/0246

    摘要： The present invention relates to a wavelength monitoring apparatus capable of measuring both standard light and laser light for semiconductor exposure simultaneously and highly accurately, without a time lag. Entrance-side optical systems 21 and 22 allow light from a laser 20 for semiconductor exposure and reference light from a He—Ne laser 10 to be incident on different areas of a single etalon 1 in the form of diverging light, converging light or diffused light in such a manner that the respective center axes thereof are displaced relative to each other. Two focusing optical systems 31 and 32 are provided in approximately coaxial relation to the respective center axes of the laser light and reference light passing through the etalon 1. A one-dimensional array optical sensor 4 is placed in a plane P coincident with the back focal planes of the focusing optical systems 31 and 32 to receive interference fringes produced by the laser light and the reference light. The positions of the interference fringes on the one-dimensional array optical sensor 4 are detected to calculate the wavelength of the laser light for semiconductor exposure.

    摘要翻译： 本发明涉及一种波长监视装置，能够同时高精度地测量用于半导体曝光的标准光和激光，而不会出现时间滞后。 入射侧光学系统21和22允许来自激光器20的光用于半导体曝光，并且来自He-Ne激光器10的参考光以发散光，会聚光或漫射光的形式入射到单个标准具1的不同区域 使得其各自的中心轴线相对于彼此移位。 两个聚焦光学系统31和32以与激光的各个中心轴和通过标准具1的参考光大致同轴的方式设置。一维阵列光学传感器4放置在与后焦点重合的平面P中 聚焦光学系统31和32的平面用于接收由激光和参考光产生的干涉条纹。 检测干涉条纹在一维阵列光学传感器4上的位置，以计算用于半导体曝光的激光的波长。