公开(公告)号：US08323522B2

公开(公告)日：2012-12-04

申请号：US12949139

申请日：2010-11-18

Applicant: Hyeokjin Jang ,  Minshik Kim ,  Kwangmin Lee ,  Sungyong Ko ,  Hwankook Chae ,  Kunjoo Park ,  Keehyun Kim ,  Weonmook Lee

Inventor： Hyeokjin Jang ,  Minshik Kim ,  Kwangmin Lee ,  Sungyong Ko ,  Hwankook Chae ,  Kunjoo Park ,  Keehyun Kim ,  Weonmook Lee

IPC: G01L21/30 ,  B44C1/22

CPC classification number: H01L21/31116 ,  H01J37/321 ,  H01J37/32266

Abstract: A plasma reactor and an etching method using the same are provided. The method includes a first changing step of changing the number or arrangement structure of inductive coils connecting to an RF source power supply unit, a step of applying RF source power and generating high density plasma, a first etching step of etching a first etch-target layer of a workpiece, a first stopping step of stopping applying the RF source power, a second changing step of changing the number or arrangement structure of the inductive coils, a step of applying RF source power to corresponding inductive coils and generating low density plasma, a second etching step of etching a second etch-target layer of the workpiece, and a second stopping step of stopping applying the RF source power.

Abstract translation: 提供等离子体反应器和使用其的蚀刻方法。 该方法包括：改变连接到RF源电源单元的感应线圈的数量或排列结构的第一改变步骤，施加RF源功率并产生高密度等离子体的步骤;蚀刻第一蚀刻靶 工件的层，停止施加RF源功率的第一停止步骤，改变感应线圈的数量或排列结构的第二改变步骤，向相应的感应线圈施加RF源功率并产生低密度等离子体的步骤， 蚀刻工件的第二蚀刻靶层的第二蚀刻步骤以及停止施加RF源功率的第二停止步骤。

公开(公告)号：US20110154843A1

公开(公告)日：2011-06-30

申请号：US12959564

申请日：2010-12-03

Applicant: Sungyong KO ,  Minshik KIM ,  Kwangmin LEE ,  Hwankook CHAE ,  Dongseok LEE ,  Keehyun KIM ,  Weonmook LEE

Inventor： Sungyong KO ,  Minshik KIM ,  Kwangmin LEE ,  Hwankook CHAE ,  Dongseok LEE ,  Keehyun KIM ,  Weonmook LEE

IPC: F25D31/00

CPC classification number: H01L21/6831

Abstract: An apparatus for controlling the temperature of an electrostatic chuck is provided. The apparatus includes an electrostatic chuck including, as a fluid channel part for circulating a refrigerant, a first fluid channel formed in an outer circumference region of the internal and a second fluid channel formed in the whole internal region, and one or more chillers for supplying refrigerant controlled to different temperatures through the first fluid channel or the second fluid channel. The first and second fluid channels are formed in two up/down stages within the electrostatic chuck, thereby being independently capable of the temperatures of a center part and edge part of a wafer.

Abstract translation: 提供一种用于控制静电卡盘的温度的装置。 该装置包括静电卡盘，该静电卡盘包括作为用于循环制冷剂的流体通道部分，形成在内部的外周区域中形成的第一流体通道和形成在整个内部区域中的第二流体通道，以及一个或多个用于供给的冷却器 制冷剂通过第一流体通道或第二流体通道控制到不同的温度。 第一和第二流体通道形成在静电卡盘内的两个上/下级中，从而独立地能够承受晶片的中心部分和边缘部分的温度。

公开(公告)号：US20110155694A1

公开(公告)日：2011-06-30

申请号：US12949139

申请日：2010-11-18

Applicant: Hyeokjin JANG ,  Minshik KIM ,  Kwangmin LEE ,  Sungyong KO ,  Hwankook CHAE ,  Kunjoo PARK ,  Keehyun KIM ,  Weonmook LEE

Inventor： Hyeokjin JANG ,  Minshik KIM ,  Kwangmin LEE ,  Sungyong KO ,  Hwankook CHAE ,  Kunjoo PARK ,  Keehyun KIM ,  Weonmook LEE

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/321 ,  H01J37/32266

Abstract: A plasma reactor and an etching method using the same are provided. The method includes a first changing step of changing the number or arrangement structure of inductive coils connecting to an RF source power supply unit, a step of applying RF source power and generating high density plasma, a first etching step of etching a first etch-target layer of a workpiece, a first stopping step of stopping applying the RF source power, a second changing step of changing the number or arrangement structure of the inductive coils, a step of applying RF source power to corresponding inductive coils and generating low density plasma, a second etching step of etching a second etch-target layer of the workpiece, and a second stopping step of stopping applying the RF source power.

Abstract translation: 提供等离子体反应器和使用其的蚀刻方法。 该方法包括：改变连接到RF源电源单元的感应线圈的数量或排列结构的第一改变步骤，施加RF源功率并产生高密度等离子体的步骤;蚀刻第一蚀刻靶 工件的层，停止施加RF源功率的第一停止步骤，改变感应线圈的数量或排列结构的第二改变步骤，向相应的感应线圈施加RF源功率并产生低密度等离子体的步骤， 蚀刻工件的第二蚀刻靶层的第二蚀刻步骤以及停止施加RF源功率的第二停止步骤。

公开(公告)号：US20110049111A1

公开(公告)日：2011-03-03

申请号：US12854409

申请日：2010-08-11

Applicant: Sungyong KO ,  Minshik KIM ,  Byoungil LEE ,  Heeseok MOON ,  Kwangmin LEE ,  Keehyun KIM ,  Weonmook LEE

Inventor： Sungyong KO ,  Minshik KIM ,  Byoungil LEE ,  Heeseok MOON ,  Kwangmin LEE ,  Keehyun KIM ,  Weonmook LEE

IPC: B23K10/00

CPC classification number: G05D7/0641 ,  H01J37/32449

Abstract: A control system for etching gas is provided. The control system includes a mass flow control unit, a flow rate control unit, and a tuning gas control unit. The mass flow control unit controls a mass flow of an etching gas input to a chamber. The flow rate control unit distributes the etching gas to an upper gas injector and a side gas injector connected with the mass flow control unit and installed in the chamber. The tuning gas control unit distributes and supplies a supplementary gas and tuning gas controlling an ion density and distribution of plasma within the chamber, to the mass flow control unit and the flow rate control unit.

Abstract translation: 提供了一种用于蚀刻气体的控制系统。 控制系统包括质量流量控制单元，流量控制单元和调谐气体控制单元。 质量流量控制单元控制输入到室的蚀刻气体的质量流量。 流量控制单元将蚀刻气体分配到与质量流量控制单元连接并安装在室中的上部气体喷射器和侧面气体喷射器。 调谐气体控制单元向质量流量控制单元和流量控制单元分配并提供辅助气体和调节气体，该气体和调节气体控制室内的离子密度和等离子体的分布。

公开(公告)号：US20060136561A1

公开(公告)日：2006-06-22

申请号：US11328971

申请日：2006-01-10

Applicant: KwangMin Lee

Inventor： KwangMin Lee

IPC: G06F15/16

CPC classification number: H04L29/1216 ,  H04L29/1215 ,  H04L29/12896 ,  H04L51/28 ,  H04L51/38 ,  H04L61/106 ,  H04L61/1564 ,  H04L61/157 ,  H04L61/605 ,  H04M1/72552

Abstract: A system and method for providing e-mail address information using a mobile phone number are provided. The system includes an e-mail address information providing module that stores e-mail address mapping information for variably mapping e-mail address information including one or more e-mail addresses of each of members, who are registered in an e-mail address information providing service that provides specified e-mail address information to be mapped to a mobile phone number, to a mobile phone number of each member, recognizes a member corresponding to a mobile phone number which is received via a communication network with a request for e-mail address information, and acquires and provides specified e-mail address information to be mapped to the received mobile phone number based on the member's e-mail address mapping information; and an e-mail address converting module that converts the mobile phone number into the specified e-mail address information.