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    Surface Modification Method for Solid Sample, Impurity Activation Method, and Method for Manufacturing Semiconductor Device
    2.
    发明申请
    Surface Modification Method for Solid Sample, Impurity Activation Method, and Method for Manufacturing Semiconductor Device 审中-公开
    固体样品的表面改性方法，杂质激活方法和制造半导体器件的方法

    公开(公告)号：US20070293056A1

    公开(公告)日：2007-12-20

    申请号：US11587815

    申请日：2005-04-28

    申请人： Yuichi Setsuhara ,  Masaki Hashida ,  Masayuki Fujita

    发明人： Yuichi Setsuhara ,  Masaki Hashida ,  Masayuki Fujita

    IPC分类号： H01L21/265 ,  H01L21/268

    CPC分类号： H01L21/02686 ,  H01L21/2026 ,  H01L21/26586 ,  H01L21/268 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833

    摘要： The present invention intends to provide a method for manufacturing a semiconductor device in which source/drain extension regions having a uniform depth are created with high reproducibility. This objective is achieved by the following method: A gate electrode 24 is formed on a semiconductor substrate 21 via a gate insulator 23. The portion of the semiconductor substrate 21 other than the gate electrode 24 is irradiated with an ultra-short pulsed laser light having a pulse width within a range from 10 to 1000 femtoseconds in order to create an amorphous layer 26a. Then, recesses 27 are created in the semiconductor substrate 21 by selectively etching the amorphous layer 26a. The recesses 27 are filled with semiconductor layers 28 whose impurity concentration is higher than that of the semiconductor substrate 21, and the source/drain extension regions 31 are created there. Within the region other than the gate electrode 24 and the source/drain extension regions 31, Deep diffusion layers 30 deeper than the source/drain extension regions 31 are created.

    摘要翻译： 本发明旨在提供一种制造半导体器件的方法，其中以高再现性产生具有均匀深度的源极/漏极延伸区域。 该目的通过以下方法实现：栅电极24经由栅极绝缘体23形成在半导体衬底21上。 为了形成非晶层26a，用脉冲宽度为10〜1000飞秒的超短脉冲激光照射半导体基板21以外的栅电极24的部分。 然后，通过选择性地蚀刻非晶层26a，在半导体衬底21中形成凹部27。 凹部27填充有杂质浓度高于半导体衬底21的半导体层28，并且在其上形成源极/漏极延伸区域31。 在栅电极24和源极/漏极延伸区域31之外的区域内，产生深度比源极/漏极延伸区域31深的扩散层30。

    Light amplifier
    3.
    发明授权
    Light amplifier 失效
    光放大器

    公开(公告)号：US08451531B2

    公开(公告)日：2013-05-28

    申请号：US12863041

    申请日：2009-01-13

    申请人： Shigeki Tokita ,  Masaki Hashida ,  Shuji Sakabe

    发明人： Shigeki Tokita ,  Masaki Hashida ,  Shuji Sakabe

    IPC分类号： H01S3/00

    CPC分类号： H01S3/2316

    摘要： A light amplifier includes first and second multi-pass amplifiers, an excitation light source, and a beam splitter. The second multi-pass amplifier includes a light attenuation portion provided in an optical path for a light pulse to travel to pass through a light amplification medium a plurality of times, for attenuating energy of the input light pulse. In addition, an excitation light pulse from the excitation light source is split by the beam splitter into two light pulses. These two pulses are input to the first and second multi-pass amplifiers, respectively. Thus, fluctuation in energy of the light pulse output from the light amplifier can be less than fluctuation in energy of the excitation light pulse.

    摘要翻译： 光放大器包括第一和第二多通道放大器，激发光源和分束器。 第二多通放大器包括设置在用于光脉冲的光路中以多次穿过光放大介质的光衰减部分，用于衰减输入光脉冲的能量。 此外，来自激发光源的激发光脉冲被分束器分裂成两个光脉冲。 这两个脉冲分别输入到第一和第二多通道放大器。 因此，从光放大器输出的光脉冲的能量波动可以小于激发光脉冲的能量的波动。

    LIGHT AMPLIFIER
    4.
    发明申请
    LIGHT AMPLIFIER 失效
    光放大器

    公开(公告)号：US20100290108A1

    公开(公告)日：2010-11-18

    申请号：US12863041

    申请日：2009-01-13

    申请人： Shigeki Tokita ,  Masaki Hashida ,  Shuji Sakabe

    发明人： Shigeki Tokita ,  Masaki Hashida ,  Shuji Sakabe

    IPC分类号： H01S3/091

    CPC分类号： H01S3/2316

    摘要： A light amplifier includes first and second multi-pass amplifiers, an excitation light source, and a beam splitter. The second multi-pass amplifier includes a light attenuation portion provided in an optical path for a light pulse to travel to pass through a light amplification medium a plurality of times, for attenuating energy of the input light pulse. In addition, an excitation light pulse from the excitation light source is split by the beam splitter into two light pulses. These two pulses are input to the first and second multi-pass amplifiers, respectively. Thus, fluctuation in energy of the light pulse output from the light amplifier can be less than fluctuation in energy of the excitation light pulse.

    摘要翻译： 光放大器包括第一和第二多通道放大器，激发光源和分束器。 第二多通放大器包括设置在用于光脉冲的光路中以多次穿过光放大介质的光衰减部分，用于衰减输入光脉冲的能量。 此外，来自激发光源的激发光脉冲被分束器分裂成两个光脉冲。 这两个脉冲分别输入到第一和第二多通道放大器。 因此，从光放大器输出的光脉冲的能量波动可以小于激发光脉冲的能量的波动。

    Ultrafast electron diffraction device
    6.
    发明授权
    Ultrafast electron diffraction device 失效
    超快电子衍射装置

    公开(公告)号：US08633438B2

    公开(公告)日：2014-01-21

    申请号：US13575619

    申请日：2011-01-25

    申请人： Shigeki Tokita ,  Masaki Hashida ,  Shuji Sakabe

    发明人： Shigeki Tokita ,  Masaki Hashida ,  Shuji Sakabe

    IPC分类号： H01J37/295 ,  H01J37/04

    CPC分类号： G01N23/20058 ,  G01N2223/102 ,  G01N2223/204

    摘要： An ultrafast electron diffraction device for irradiating a sample with a bunch of electrons in an ultrashort pulse in order to perform an ultrafast analysis of the sample. The ultrafast electron diffraction device includes: a) a laser emitter for delivering an ultrashort pulse laser having a pulse width of not more than 1 ps onto a target which is a material for generating electrons at an intensity of not less than 1017 W/cm2; and b) a pulse compressor for rotating, in a magnetostatic field, a bunch of electrons generated from the target onto which the ultrashort pulse laser has been delivered so as to suppress the spread of the bunch of electrons in their traveling direction. The pulse compressor is composed of an entrance-side parallel-plate static magnet, one end of which is placed on the course of the bunch of electrons, and an exit-side parallel-plate static magnet.

    摘要翻译： 一种超快电子衍射装置，用于在超短脉冲中用一束电子照射样品，以便对样品进行超快分析。 超快电子衍射装置包括：a）激光发射器，用于将具有不大于1ps的脉冲宽度的超短脉冲激光输送到作为用于产生不小于1017W / cm 2的强度的电子的材料的靶上; 以及b）脉冲压缩机，用于在静磁场中旋转从被输送超短脉冲激光器的目标产生的一束电子，以抑制电子束在其行进方向上的扩展。 脉冲压缩机由入射侧平行板静磁体，其一端放置在电子束的过程上，以及出射侧平行板静磁体构成。

    ULTRAFAST ELECTRON DIFFRACTION DEVICE
    7.
    发明申请
    ULTRAFAST ELECTRON DIFFRACTION DEVICE 失效
    超声电子衍射装置

    公开(公告)号：US20120312987A1

    公开(公告)日：2012-12-13

    申请号：US13575619

    申请日：2011-01-25

    申请人： Shigeki Tokita ,  Masaki Hashida ,  Shuji Sakabe

    发明人： Shigeki Tokita ,  Masaki Hashida ,  Shuji Sakabe

    IPC分类号： G01N23/20

    CPC分类号： G01N23/20058 ,  G01N2223/102 ,  G01N2223/204

    摘要： An ultrafast electron diffraction device for irradiating a sample with a bunch of electrons in an ultrashort pulse in order to perform an ultrafast analysis of the sample. The ultrafast electron diffraction device includes: a) a laser emitter for delivering an ultrashort pulse laser having a pulse width of not more than 1 ps onto a target which is a material for generating electrons at an intensity of not less than 1017 W/cm2; and b) a pulse compressor for rotating, in a magnetostatic field, a bunch of electrons generated from the target onto which the ultrashort pulse laser has been delivered so as to suppress the spread of the bunch of electrons in their traveling direction. The pulse compressor is composed of an entrance-side parallel-plate static magnet, one end of which is placed on the course of the bunch of electrons, and an exit-side parallel-plate static magnet.

    摘要翻译： 一种超快电子衍射装置，用于在超短脉冲中用一束电子照射样品，以便对样品进行超快分析。 超快电子衍射装置包括：a）激光发射器，用于将具有不大于1ps的脉冲宽度的超短脉冲激光输送到作为用于产生不小于1017W / cm 2的强度的电子的材料的靶上; 以及b）脉冲压缩机，用于在静磁场中旋转从被输送超短脉冲激光器的目标产生的一束电子，以抑制电子束在其行进方向上的扩展。 脉冲压缩机由入射侧平行板静磁体，其一端放置在电子束的过程上，以及出射侧平行板静磁体构成。