摘要:
A memory has sense amplifiers that provide data onto a global data lines that are received by secondary amplifiers. The sense amplifiers and the secondary amplifiers that are coupled to the same global data lines are enabled by clocks that are timed by a common clock signal. The memory has subarrays in which each subarray is divided into blocks. When a block is selected, a corresponding block select signal is generated. The sense amplifiers and the secondary amplifiers that are coupled in common with the enabled sense amplifiers in the selected block are enabled in response to this block select signal. The block select signal that enables the sense amplifiers initiates a secondary amp control signal which, after a programmed delay, enables the secondary amplifier.
摘要:
A memory has sense amplifiers that provide data onto a global data lines that are received by secondary amplifiers. The sense amplifiers and the secondary amplifiers are enabled by clocks that are timed by programmable delay circuits. The programmable delays are programmed by delay selection circuits that provide a continuous output to the programmable delay circuits. There are two delay selection circuits. One is shared by all of the programmable delay circuits that enable the sense amplifiers, and one is shared by all of the programmable delay circuits that enable the secondary amplifiers. The outputs of these two delay selection circuits are chosen to provide the output which programs the programmable delay circuits for optimizing the worst case of the access time of the memory.
摘要:
A memory has sense amplifiers that provide data onto a global data lines that are received by secondary amplifiers. The sense amplifiers and the secondary amplifiers are enabled by clocks that are timed by programmable delay circuits. The programmable delays are programmed by delay selection circuits that provide a continuous output to the programmable delay circuits. There are two delay selection circuits. One is shared by all of the programmable delay circuits that enable the sense amplifiers, and one is shared by all of the programmable delay circuits that enable the secondary amplifiers. The outputs of these two delay selection circuits are chosen to provide the output which programs the programmable delay circuits for optimizing the worst case of the access time of the memory.
摘要:
A buffer circuit (60) that includes a current source (74) having an output, the current source to provide a substantially constant current, a first differential amplifier (62), and a second differential amplifier (66). The current from current source 74 is shared by the first (62) and second (64) differential amplifiers.
摘要:
A memory has a sense amplifier that provides data onto a global data line that is received by a secondary amplifier. The sense amplifier is precharged to a high voltage and responds to data provided by a selected memory cell on a pair of bit lines. The amplifier is a dynamic amplifier that latches the data but also limits the output voltage swing provided to the secondary amplifier. By limiting the voltage swing on the high-capacitance global data lines, there is significant power savings. The voltage swing that is provided is sufficient for reliable detection by the secondary amplifier.