公开(公告)号：US10546949B2

公开(公告)日：2020-01-28

申请号：US14758035

申请日：2013-12-23

Applicant: Agency for Science, Technology and Research

Inventor： Krishna Kumar Manippady ,  Surani Bin Dolmanan ,  Kaixin Vivian Lin ,  Hui Ru Tan ,  Sudhiranjan Tripathy

IPC: H01L27/12 ,  H01L29/778 ,  H01L21/02 ,  C30B25/02 ,  C30B29/40 ,  H01L29/66 ,  H01L29/20

Abstract: Contemplated is a semiconductor device comprising: a substrate; a group (III)-nitride layer; a metal-group (III)-nitride layer deposited between the substrate and group (III)-nitride layer; and a metal-nitride layer deposited between the substrate and the metal-group (III)-nitride layer. Also a method for making a semiconductor device with the above mentioned structure is contemplated. Furthermore, the substrate can be a silicon on insulator (SOI) substrate; the metal-nitride layer can be an aluminium nitride layer; the metal-group (III)-nitride layer can be an aluminium gallium nitride layer; and the group (III)-nitride layer can be a gallium nitride layer.

公开(公告)号：US20150357451A1

公开(公告)日：2015-12-10

申请号：US14758035

申请日：2013-12-23

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

Inventor： Krishna Kumar Manippady ,  Surani Bin Dolmananh ,  Kaixin Vivian Lin ,  Hui Ru Tan ,  Sudhiranjan Tripathy

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H01L21/02

CPC classification number: H01L29/778 ,  C30B25/02 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786

Abstract: Contemplated is a semiconductor device comprising: a substrate; a group (III)-nitride layer; a metal-group (III)-nitride layer deposited between the substrate and group (III)-nitride layer; and a metal-nitride layer deposited between the substrate and the metal-group (III)-nitride layer. Also a method for making a semiconductor device with the above mentioned structure is contemplated. Furthermore, the substrate can be a silicon on insulator (SOI) substrate; the metal-nitride layer can be an aluminium nitride layer; the metal-group (III)-nitride layer can be an aluminium gallium nitride layer; and the group (III)-nitride layer can be a gallium nitride layer.

Abstract translation: 考虑的是半导体器件，包括：衬底; 第（III） - 氮化物层; 沉积在基板和（III） - 氮化物层之间的金属（III） - 氮化物层; 和沉积在基板和金属（III） - 氮化物层之间的金属氮化物层。 也可以想到制造具有上述结构的半导体器件的方法。 此外，衬底可以是绝缘体上硅（SOI）衬底; 该金属氮化物层可以是氮化铝层; 金属（III） - 氮化物层可以是氮化镓铝层; 并且第（III） - 氮化物层可以是氮化镓层。

公开(公告)号：US10763348B2

公开(公告)日：2020-09-01

申请号：US16701951

申请日：2019-12-03

Applicant: Agency for Science, Technology and Research

Inventor： Krishna Kumar Manippady ,  Surani Bin Dolmanan ,  Kaixin Vivian Lin ,  Hui Ru Tan ,  Sudhiranjan Tripathy

IPC: H01L27/12 ,  H01L29/778 ,  H01L21/02 ,  C30B25/02 ,  C30B29/40 ,  H01L29/66 ,  H01L29/20

Abstract: The invention provides a product and a manufacturing process for a high power semiconductor device. The semiconductor device comprises a GaN/AlGaN epilayer structure on an SOI substrate with a thick, uninterrupted GaN layer for use in high-power applications.

公开(公告)号：US20200105915A1

公开(公告)日：2020-04-02

申请号：US16701951

申请日：2019-12-03

Applicant: Agency for Science, Technology and Research

Inventor： Krishna Kumar Manippady ,  Surani Bin Dolmanan ,  Kaixin Vivian Lin ,  Hui Ru Tan ,  Sudhiranjan Tripathy

IPC: H01L29/778 ,  H01L21/02 ,  H01L29/66 ,  C30B25/02 ,  C30B29/40

Abstract: The invention provides a product and a manufacturing process for a high power semiconductor device. The semiconductor device comprises a GaN/AlGaN epilayer structure on an SOI substrate with a thick, uninterrupted GaN layer for use in high-power applications.