公开(公告)号：US20220301856A1

公开(公告)日：2022-09-22

申请号：US17655245

申请日：2022-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Chuang Wei ,  Aditya Chaudhury ,  Prahlad Kulkarni ,  Xing Lin ,  Xiaoda Sun ,  Woo Jung Shin ,  Bubesh Babu Jotheeswaran ,  Fei Wang ,  Qu Jin ,  Aditya Walimbe ,  Rajeev Reddy Kosireddy ,  Yen Chun Fu ,  Amin Azimi

IPC: H01L21/02 ,  H01L21/311 ,  B08B5/00 ,  H01L21/67

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

公开(公告)号：US12112938B2

公开(公告)日：2024-10-08

申请号：US17655245

申请日：2022-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Chuang Wei ,  Aditya Chaudhury ,  Prahlad Kulkarni ,  Xing Lin ,  Xiaoda Sun ,  Woo Jung Shin ,  Bubesh Babu Jotheeswaran ,  Fei Wang ,  Qu Jin ,  Aditya Walimbe ,  Rajeev Reddy Kosireddy ,  Yen Chun Fu ,  Amin Azimi

IPC: B08B5/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/02046 ,  B08B5/00 ,  H01L21/31116 ,  H01L21/67069 ,  H01J2237/335

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

公开(公告)号：US11315794B2

公开(公告)日：2022-04-26

申请号：US17070580

申请日：2020-10-14

Applicant: ASM IP Holding B.V.

Inventor： Fei Wang ,  Aditya Walimbe

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: An apparatus and methods for selectively etching a particular layer are disclosed. The apparatus and methods are directed towards maintaining the etch rate of the particular layer, while keeping intact a non-etched layer. The etching process may be accomplished by co-flowing a hydrogen precursor gas and a fluorine precursor gas into a remote plasma unit. A resulting gas mixture may then be flowed onto the substrate having a silicon oxide layer as an etch layer and a silicon nitride layer as a non-etched layer, for example. A reaction between the resulting gas mixture and the particular layer takes place, resulting in etching of the silicon oxide layer while maintaining the silicon nitride layer in the above example.

公开(公告)号：US20240429038A1

公开(公告)日：2024-12-26

申请号：US18827621

申请日：2024-09-06

Applicant: ASM IP Holding B.V.

Inventor： Chuang Wei ,  Aditya Chaudhury ,  Prahlad Kulkarni ,  Xing Lin ,  Xiaoda Sun ,  Woo Jung Shin ,  Bubesh Babu Jotheeswaran ,  Fei Wang ,  Qu Jin ,  Aditya Walimbe ,  Rajeev Reddy Kosireddy ,  Yen Chun Fu ,  Amin Azimi

IPC: H01L21/02 ,  B08B5/00 ,  H01L21/311 ,  H01L21/67

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

公开(公告)号：US20210118687A1

公开(公告)日：2021-04-22

申请号：US17070580

申请日：2020-10-14

Applicant: ASM IP Holding B.V.

Inventor： Fei Wang ,  Aditya Walimbe

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/02

Abstract: An apparatus and methods for selectively etching a particular layer are disclosed. The apparatus and methods are directed towards maintaining the etch rate of the particular layer, while keeping intact a non-etched layer. The etching process may be accomplished by co-flowing a hydrogen precursor gas and a fluorine precursor gas into a remote plasma unit. A resulting gas mixture may then be flowed onto the substrate having a silicon oxide layer as an etch layer and a silicon nitride layer as a non-etched layer, for example. A reaction between the resulting gas mixture and the particular layer takes place, resulting in etching of the silicon oxide layer while maintaining the silicon nitride layer in the above example.

公开(公告)号：US20220301857A1

公开(公告)日：2022-09-22

申请号：US17697056

申请日：2022-03-17

Applicant: ASM IP Holding B.V.

Inventor： Fei Wang ,  Woo Jung Shin ,  Aditya Walimbe

IPC: H01L21/02 ,  B08B7/00

Abstract: A method of precleaning a substrate includes supporting a substrate with silicon oxide on its surface within a reaction chamber of a semiconductor processing system and flowing a halogen-containing reactant and a hydrogen-containing reactant into the reaction chamber. A first preclean material is formed from the halogen-containing reactant, the hydrogen-containing reactant, and a first portion of the silicon oxide on the surface of the substrate. Additional halogen-containing reactant is flowed into the reaction chamber without flowing additional hydrogen-containing reactant into the reaction chamber, and a second preclean material is formed from the additional halogen-containing reactant and a second portion of the silicon oxide on the surface of the substrate. Methods of forming structures on substrates and semiconductor processing systems are also described.

公开(公告)号：US20220246436A1

公开(公告)日：2022-08-04

申请号：US17718427

申请日：2022-04-12

Applicant: ASM IP Holding B.V.

Inventor： Fei Wang ,  Aditya Walimbe

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: An apparatus and methods for selectively etching a particular layer are disclosed. The apparatus and methods are directed towards maintaining the etch rate of the particular layer, while keeping intact a non-etched layer. The etching process may be accomplished by co-flowing a hydrogen precursor gas and a fluorine precursor gas into a remote plasma unit. A resulting gas mixture may then be flowed onto the substrate having a silicon oxide layer as an etch layer and a silicon nitride layer as a non-etched layer, for example. A reaction between the resulting gas mixture and the particular layer takes place, resulting in etching of the silicon oxide layer while maintaining the silicon nitride layer in the above example.