公开(公告)号：US20220301856A1

公开(公告)日：2022-09-22

申请号：US17655245

申请日：2022-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Chuang Wei ,  Aditya Chaudhury ,  Prahlad Kulkarni ,  Xing Lin ,  Xiaoda Sun ,  Woo Jung Shin ,  Bubesh Babu Jotheeswaran ,  Fei Wang ,  Qu Jin ,  Aditya Walimbe ,  Rajeev Reddy Kosireddy ,  Yen Chun Fu ,  Amin Azimi

IPC: H01L21/02 ,  H01L21/311 ,  B08B5/00 ,  H01L21/67

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

公开(公告)号：US12112938B2

公开(公告)日：2024-10-08

申请号：US17655245

申请日：2022-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Chuang Wei ,  Aditya Chaudhury ,  Prahlad Kulkarni ,  Xing Lin ,  Xiaoda Sun ,  Woo Jung Shin ,  Bubesh Babu Jotheeswaran ,  Fei Wang ,  Qu Jin ,  Aditya Walimbe ,  Rajeev Reddy Kosireddy ,  Yen Chun Fu ,  Amin Azimi

IPC: B08B5/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/02046 ,  B08B5/00 ,  H01L21/31116 ,  H01L21/67069 ,  H01J2237/335

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

公开(公告)号：US20240429038A1

公开(公告)日：2024-12-26

申请号：US18827621

申请日：2024-09-06

Applicant: ASM IP Holding B.V.

Inventor： Chuang Wei ,  Aditya Chaudhury ,  Prahlad Kulkarni ,  Xing Lin ,  Xiaoda Sun ,  Woo Jung Shin ,  Bubesh Babu Jotheeswaran ,  Fei Wang ,  Qu Jin ,  Aditya Walimbe ,  Rajeev Reddy Kosireddy ,  Yen Chun Fu ,  Amin Azimi

IPC: H01L21/02 ,  B08B5/00 ,  H01L21/311 ,  H01L21/67

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

公开(公告)号：US20230265582A1

公开(公告)日：2023-08-24

申请号：US18110403

申请日：2023-02-16

Applicant: ASM IP Holding B.V.

Inventor： Gregory Deye ,  Yen Chun Fu ,  Arun Murali

IPC: C30B33/08 ,  C30B25/18 ,  C30B29/06

CPC classification number: C30B33/08 ,  C30B25/186 ,  C30B29/06

Abstract: A method of processing a surface of an epitaxially grown silicon film includes using a radical species to remove random surface terminations from the surface of the epitaxially grown silicon film and to generate a substantially uniform distribution of surface terminations. Reaction systems for performing such a method, and epitaxially grown films prepared using such a method, also are provided.