公开(公告)号：US20230159865A1

公开(公告)日：2023-05-25

申请号：US17991044

申请日：2022-11-21

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Fei Wang ,  Robin Scott ,  Woo Jung Shin ,  Amin Azimi

IPC: C11D7/32 ,  C11D7/04 ,  C11D7/34 ,  C11D11/00

CPC classification number: C11D7/3209 ,  C11D7/04 ,  C11D7/34 ,  C11D11/0041

Abstract: A method of cleaning (e.g., selectively removing an oxide from) a surface of a substrate is disclosed. An exemplary method includes providing one or more of a haloalkylamine and a halogenated sulfur compound to a reaction chamber to selectively remove the silicon oxide from the surface.

公开(公告)号：US20220301856A1

公开(公告)日：2022-09-22

申请号：US17655245

申请日：2022-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Chuang Wei ,  Aditya Chaudhury ,  Prahlad Kulkarni ,  Xing Lin ,  Xiaoda Sun ,  Woo Jung Shin ,  Bubesh Babu Jotheeswaran ,  Fei Wang ,  Qu Jin ,  Aditya Walimbe ,  Rajeev Reddy Kosireddy ,  Yen Chun Fu ,  Amin Azimi

IPC: H01L21/02 ,  H01L21/311 ,  B08B5/00 ,  H01L21/67

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

公开(公告)号：US20240429038A1

公开(公告)日：2024-12-26

申请号：US18827621

申请日：2024-09-06

Applicant: ASM IP Holding B.V.

Inventor： Chuang Wei ,  Aditya Chaudhury ,  Prahlad Kulkarni ,  Xing Lin ,  Xiaoda Sun ,  Woo Jung Shin ,  Bubesh Babu Jotheeswaran ,  Fei Wang ,  Qu Jin ,  Aditya Walimbe ,  Rajeev Reddy Kosireddy ,  Yen Chun Fu ,  Amin Azimi

IPC: H01L21/02 ,  B08B5/00 ,  H01L21/311 ,  H01L21/67

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

公开(公告)号：US11437241B2

公开(公告)日：2022-09-06

申请号：US17221944

申请日：2021-04-05

Applicant: ASM IP Holding B.V.

Inventor： Fei Wang ,  Woo Jung Shin

IPC: H01L21/306 ,  H01L21/3065

Abstract: An apparatus and methods for selectively etching a particular layer are disclosed. The apparatus and methods are directed towards maintaining the etch rate of the particular layer, while keeping intact a non-etched layer. A gas mixture may be flowed onto the substrate in separate loops having an oxide layer and an oxynitride layer as an etch layer and a nitride layer as a non-etched layer, for example. A reaction between the resulting gas mixture and the particular layer takes place, resulting in etching of the oxide layer and the oxynitride layer while maintaining the nitride layer in the above example.

公开(公告)号：US20210118687A1

公开(公告)日：2021-04-22

申请号：US17070580

申请日：2020-10-14

Applicant: ASM IP Holding B.V.

Inventor： Fei Wang ,  Aditya Walimbe

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/02

Abstract: An apparatus and methods for selectively etching a particular layer are disclosed. The apparatus and methods are directed towards maintaining the etch rate of the particular layer, while keeping intact a non-etched layer. The etching process may be accomplished by co-flowing a hydrogen precursor gas and a fluorine precursor gas into a remote plasma unit. A resulting gas mixture may then be flowed onto the substrate having a silicon oxide layer as an etch layer and a silicon nitride layer as a non-etched layer, for example. A reaction between the resulting gas mixture and the particular layer takes place, resulting in etching of the silicon oxide layer while maintaining the silicon nitride layer in the above example.

公开(公告)号：US12112938B2

公开(公告)日：2024-10-08

申请号：US17655245

申请日：2022-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Chuang Wei ,  Aditya Chaudhury ,  Prahlad Kulkarni ,  Xing Lin ,  Xiaoda Sun ,  Woo Jung Shin ,  Bubesh Babu Jotheeswaran ,  Fei Wang ,  Qu Jin ,  Aditya Walimbe ,  Rajeev Reddy Kosireddy ,  Yen Chun Fu ,  Amin Azimi

IPC: B08B5/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/02046 ,  B08B5/00 ,  H01L21/31116 ,  H01L21/67069 ,  H01J2237/335

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

公开(公告)号：US20220367175A1

公开(公告)日：2022-11-17

申请号：US17875907

申请日：2022-07-28

Applicant: ASM IP Holding B.V.

Inventor： Xing Lin ,  Peipei Gao ,  Fei Wang ,  John Tolle ,  Bubesh Babu Jotheeswaran ,  Vish Ramanathan ,  Eric Hill

IPC: H01L21/02 ,  B08B7/00 ,  B08B5/00 ,  H01L21/67 ,  H01J37/32 ,  H01L21/311

Abstract: A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.

公开(公告)号：US20210320010A1

公开(公告)日：2021-10-14

申请号：US17221944

申请日：2021-04-05

Applicant: ASM IP Holding B.V.

Inventor： Fei Wang ,  Woo Jung Shin

IPC: H01L21/306 ,  H01L21/3065

Abstract: An apparatus and methods for selectively etching a particular layer are disclosed. The apparatus and methods are directed towards maintaining the etch rate of the particular layer, while keeping intact a non-etched layer. A gas mixture may be flowed onto the substrate in separate loops having an oxide layer and an oxynitride layer as an etch layer and a nitride layer as a non-etched layer, for example. A reaction between the resulting gas mixture and the particular layer takes place, resulting in etching of the oxide layer and the oxynitride layer while maintaining the nitride layer in the above example.

公开(公告)号：US20190019670A1

公开(公告)日：2019-01-17

申请号：US16000109

申请日：2018-06-05

Applicant: ASM IP Holding B.V.

Inventor： Xing Lin ,  Peipei Gao ,  Fei Wang ,  John Tolle ,  Bubesh Babu Jotheeswaran ,  Vish Ramanathan ,  Eric Hill

IPC: H01L21/02 ,  H01L21/67 ,  B08B5/00 ,  B08B7/00

Abstract: A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.

公开(公告)号：US20230193475A1

公开(公告)日：2023-06-22

申请号：US18068399

申请日：2022-12-19

Applicant: ASM IP Holding, B.V.

Inventor： Gregory Deye ,  Caleb Miskin ,  Hichem M'Saad ,  Steven Reiter ,  Alexandros Demos ,  Fei Wang

IPC: C23F1/12

CPC classification number: C23F1/12

Abstract: A method of processing a silicon surface includes using a first radical species to remove contamination from the surface and to roughen the surface; and using a second radical species to smooth the roughened surface. Reaction systems for performing such a method, and silicon surfaces prepared using such a method, also are provided.