公开(公告)号：US20230298930A1

公开(公告)日：2023-09-21

申请号：US18122364

申请日：2023-03-16

Applicant: ASM IP Holding B.V.

Inventor： Seungju Chun ,  ChangWan Lee

IPC: H01L21/762 ,  H01J37/32 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01L21/76224 ,  H01J37/32449 ,  H01L21/02274 ,  H01L21/0228 ,  C23C16/4554 ,  H01J2237/332 ,  H01J37/32834 ,  H01J37/32082

Abstract: Disclosed is a method of processing a substrate, including: providing the substrate into a reaction space, the substrate comprising a gap having a predetermined cross-sectional area and a depth, performing a first sub-cycle step for depositing a gap-filling material by a predetermined thickness along a surface of the gap by an atomic layer deposition method, performing a second sub-cycle step for forming a deposition inhibiting region in an upper region of the gap using a deposition inhibitor and repeating a super-cycle such that a cross-sectional area of an inlet region of the gap remains greater than that of a lower region thereof located below the inlet region, the super-cycle comprising at least one the first sub-cycle and at least one the second sub-cycle, wherein the gap is filled without an occurrence of a void in the gap. Further, a substrate processing method for controlling a position of the void in the gap using the disclosed method above is disclosed.

公开(公告)号：US20230096453A1

公开(公告)日：2023-03-30

申请号：US17951551

申请日：2022-09-23

Applicant: ASM IP Holding B.V.

Inventor： ChangWan Lee ,  KyungEun Lee ,  HakJoon Lee ,  SungKyu Kang

IPC: C23C16/455 ,  C23C16/56

Abstract: A substrate processing method for gap-filling a recess between a first protrusion and a second protrusion of a pattern structure includes: changing a profile of a layer formed on the pattern structure, wherein the changing of the profile of the layer includes: in an upper area, increasing a width of the recess to suppress formation of a void in the upper area; and, in a lower area, reducing the width of the recess to contact the layer, thereby inducing formation of a void under the lower area, and thus allows a position of the void to be adjusted.