公开(公告)号：US20230092185A1

公开(公告)日：2023-03-23

申请号：US17941211

申请日：2022-09-09

Applicant: ASM IP Holding B.V.

Inventor： DongHyun Ko ,  HakJoon Lee ,  SungKyu Kang

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/505 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

Abstract: In one embodiment, a particle with a first particle thickness may be formed on a film with a first thickness, followed by a plasma treatment. The first particle thickness may be reduced to a second particle thickness below an allowable limit and the first film thickness may be reduced to a second film thickness by the plasma treatment. In another embodiment, a particle with a first particle thickness may be formed on a first film with a first film thickness, followed by a plasma treatment. The first particle thickness may be reduced to a second particle thickness below an allowable limit and the first film thickness may be reduced to a second film thickness by the plasma treatment. After the plasma treatment, a second film with a third film thickness may be deposited on the first film and the particle may be buried in the second film.

公开(公告)号：US20230110980A1

公开(公告)日：2023-04-13

申请号：US17962859

申请日：2022-10-10

Applicant: ASM IP Holding B.V.

Inventor： DooHyun La ,  KyungEun Lee ,  HakJoon Lee ,  YoonKi Min ,  HaRim Kim ,  DongHyun Ko ,  Seongil Cho

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  C23C16/505

Abstract: A substrate processing method capable of forming a film with an improved step coverage on a surface of a gap structure having a high aspect ratio includes: providing a gap structure having a first step and a second step portion; supplying gas including a source gas onto the gap structure; generating active species from the source gas; generating neutral molecules by neutralizing the active species, and moving the neutral molecules in a direction toward a lower surface of a recess extending between the first stepped portion and the second stepped portion; and exciting the neutral molecules moving in the direction toward the lower surface.

公开(公告)号：US20230096453A1

公开(公告)日：2023-03-30

申请号：US17951551

申请日：2022-09-23

Applicant: ASM IP Holding B.V.

Inventor： ChangWan Lee ,  KyungEun Lee ,  HakJoon Lee ,  SungKyu Kang

IPC: C23C16/455 ,  C23C16/56

Abstract: A substrate processing method for gap-filling a recess between a first protrusion and a second protrusion of a pattern structure includes: changing a profile of a layer formed on the pattern structure, wherein the changing of the profile of the layer includes: in an upper area, increasing a width of the recess to suppress formation of a void in the upper area; and, in a lower area, reducing the width of the recess to contact the layer, thereby inducing formation of a void under the lower area, and thus allows a position of the void to be adjusted.

公开(公告)号：US20230323534A1

公开(公告)日：2023-10-12

申请号：US18205716

申请日：2023-06-05

Applicant: ASM IP Holding B.V.

Inventor： DooHyun La ,  HaRim Kim ,  YoonKi Min ,  KyungEun Lee ,  Zhenyu Jin ,  HakJoon Lee

IPC: C23C16/455 ,  H01L21/02 ,  H01J37/32 ,  C23C16/40 ,  C23C16/44 ,  C23C16/34

CPC classification number: C23C16/45536 ,  H01L21/0228 ,  H01J37/32449 ,  H01J37/32082 ,  C23C16/401 ,  H01L21/02274 ,  H01L21/02211 ,  H01L21/02164 ,  H01L21/0217 ,  C23C16/4404 ,  C23C16/345 ,  H01J2237/332

Abstract: A substrate processing method capable of forming a film with an improved step coverage and/or improved and/or more uniform properties on a surface of a gap structure having a high aspect ratio is provided. An exemplary substrate processing method includes: providing a gap structure; supplying gas including a source gas onto the gap structure; generating active species from the source gas; generating neutral molecules by neutralizing the active species, and moving the neutral molecules in a direction toward a lower surface of a recess extending between the first stepped portion and the second stepped portion; and exciting the neutral molecules moving in the direction toward the lower surface.

公开(公告)号：US11488819B2

公开(公告)日：2022-11-01

申请号：US16702506

申请日：2019-12-03

Applicant: ASM IP Holding B.V.

Inventor： HakJoo Lee ,  HakJoon Lee ,  YoungSim Kim

IPC: H01L21/02 ,  H01L21/67

Abstract: A method of cleaning blind spots around a substrate supporting apparatus by controlling a position of the substrate supporting apparatus includes moving the substrate supporting apparatus relative to a ring and supplying a cleaning gas to an upper space of the substrate supporting apparatus.