公开(公告)号：US20240014033A1

公开(公告)日：2024-01-11

申请号：US18218221

申请日：2023-07-05

Applicant: ASM IP Holding B.V.

Inventor： Hiroshi Kou ,  Hideaki Fukuda

IPC: H01L21/02 ,  C23C16/34

CPC classification number: H01L21/02211 ,  H01L21/0217 ,  C23C16/345 ,  H01L21/0228 ,  H01L21/02274

Abstract: Methods of depositing material onto a surface of a substrate. Exemplary methods include flowing a gas-phase precursor within the reaction chamber, condensing the precursor onto the surface of the substrate to form condensed material, and curing the condensed material to transform the condensed material to cured material. The step of curing can be a plasma process and can include use of a reactant.

公开(公告)号：US20240026532A1

公开(公告)日：2024-01-25

申请号：US18222012

申请日：2023-07-14

Applicant: ASM IP Holding B.V.

Inventor： YeaHyun Gu ,  KwangMan Ko ,  HyunChul Kim ,  HakJoo Lee ,  Takahiro Arai ,  Hiroshi Kou

IPC: C23C16/455 ,  C23C16/56 ,  C23C16/40

CPC classification number: C23C16/45529 ,  C23C16/45553 ,  C23C16/56 ,  C23C16/402 ,  C23C16/405

Abstract: Provided is a method for forming a TiO2—SiO2 laminated layer for suppressing a crystallization of TiO2 layer. In one embodiment, a TiO2—SiO2 laminated layer may be formed by alternately forming and stacking a TiO2 layer and a SiO2 layer by plasma atomic layer deposition. A TiO2—SiO2 laminated layer has a high film strength compared to the conventional SiO2 layer and a crystallization of TiO2 layer is suppressed by forming a laminated layer and controlling a cycle ratio of the step of forming a TiO2 layer to the step of forming a SiO2 layer.