公开(公告)号：US20240026532A1

公开(公告)日：2024-01-25

申请号：US18222012

申请日：2023-07-14

Applicant: ASM IP Holding B.V.

Inventor： YeaHyun Gu ,  KwangMan Ko ,  HyunChul Kim ,  HakJoo Lee ,  Takahiro Arai ,  Hiroshi Kou

IPC: C23C16/455 ,  C23C16/56 ,  C23C16/40

CPC classification number: C23C16/45529 ,  C23C16/45553 ,  C23C16/56 ,  C23C16/402 ,  C23C16/405

Abstract: Provided is a method for forming a TiO2—SiO2 laminated layer for suppressing a crystallization of TiO2 layer. In one embodiment, a TiO2—SiO2 laminated layer may be formed by alternately forming and stacking a TiO2 layer and a SiO2 layer by plasma atomic layer deposition. A TiO2—SiO2 laminated layer has a high film strength compared to the conventional SiO2 layer and a crystallization of TiO2 layer is suppressed by forming a laminated layer and controlling a cycle ratio of the step of forming a TiO2 layer to the step of forming a SiO2 layer.

公开(公告)号：US20240006161A1

公开(公告)日：2024-01-04

申请号：US18214255

申请日：2023-06-26

Applicant: ASM IP Holding B.V.

Inventor： HaeIn Kim ,  HakJoo Lee ,  KiKang Kim ,  YongWoong Jeong ,  YoungMin Kim

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32266 ,  H01J37/32853 ,  H01J2237/334 ,  H01J2237/327

Abstract: A substrate processing method capable of preventing a damage to a reactor and a lower film includes: supplying a substrate having a pattern structure; forming a layer on the pattern structure; generating active species by applying plasma on the substrate; and selectively etching a layer on the pattern structure generated by the active species by performing isotropic etching on the layer, wherein the applying of the plasma includes: increasing a density of the active species; and increasing a mobility of the active species.

公开(公告)号：US11530483B2

公开(公告)日：2022-12-20

申请号：US16445096

申请日：2019-06-18

Applicant: ASM IP Holding B.V.

Inventor： YoonKi Min ,  YoungHoon Kim ,  HakJoo Lee ,  SeungJu Chun

IPC: C23C16/46 ,  H01L21/677 ,  C23C16/52 ,  H01L21/67

Abstract: Provided is a substrate processing system for improving productivity of processes. In this regard, the substrate processing system includes: a first chamber providing a space where at least one substrate is accommodated; a second chamber configured to transfer at least one substrate to the first chamber; and a temperature control unit configured to change a temperature of a gas in the second chamber.

公开(公告)号：US20230070340A1

公开(公告)日：2023-03-09

申请号：US17896340

申请日：2022-08-26

Applicant: ASM IP Holding B.V.

Inventor： YongWoong Jeong ,  HakJoo Lee ,  KiKang Kim ,  JongHyun Ahn ,  YoungMin Kim ,  YoungSim Kim

IPC: C23C16/44 ,  C23C16/455

Abstract: Provided is a method for seasoning a reactor in which a dry cleaning step and a first seasoning step are carried out at the first temperature, then the temperature is raised to a second temperature. The method also comprises a second seasoning step and a substrate processing step are carried out at the second temperature. The seasoning step of the disclosure suppresses dry cleaning byproducts from evaporating, spreading and re-spreading in a reactor. Thus, deterioration of the film quality deposited on a substrate is prevented, extending the wet etch cycle of the reactor and improving the uptime and the efficiency of the reactor.

公开(公告)号：US20200176244A1

公开(公告)日：2020-06-04

申请号：US16702506

申请日：2019-12-03

Applicant: ASM IP Holding B.V.

Inventor： HakJoo Lee ,  HakJoon Kim ,  YoungSim Kim

IPC: H01L21/02 ,  H01L21/67

Abstract: A method of cleaning blind spots around a substrate supporting apparatus by controlling a position of the substrate supporting apparatus includes moving the substrate supporting apparatus relative to a ring and supplying a cleaning gas to an upper space of the substrate supporting apparatus.

公开(公告)号：US11488819B2

公开(公告)日：2022-11-01

申请号：US16702506

申请日：2019-12-03

Applicant: ASM IP Holding B.V.

Inventor： HakJoo Lee ,  HakJoon Lee ,  YoungSim Kim

IPC: H01L21/02 ,  H01L21/67

Abstract: A method of cleaning blind spots around a substrate supporting apparatus by controlling a position of the substrate supporting apparatus includes moving the substrate supporting apparatus relative to a ring and supplying a cleaning gas to an upper space of the substrate supporting apparatus.

公开(公告)号：US20190390343A1

公开(公告)日：2019-12-26

申请号：US16445096

申请日：2019-06-18

Applicant: ASM IP Holding B.V.

Inventor： YoonKi Min ,  YoungHoon Kim ,  HakJoo Lee ,  SeungJu Chun

IPC: C23C16/46 ,  H01L21/67 ,  C23C16/52 ,  H01L21/677

Abstract: Provided is a substrate processing system for improving productivity of processes. In this regard, the substrate processing system includes: a first chamber providing a space where at least one substrate is accommodated; a second chamber configured to transfer at least one substrate to the first chamber; and a temperature control unit configured to change a temperature of a gas in the second chamber.