公开(公告)号：US20240026532A1

公开(公告)日：2024-01-25

申请号：US18222012

申请日：2023-07-14

Applicant: ASM IP Holding B.V.

Inventor： YeaHyun Gu ,  KwangMan Ko ,  HyunChul Kim ,  HakJoo Lee ,  Takahiro Arai ,  Hiroshi Kou

IPC: C23C16/455 ,  C23C16/56 ,  C23C16/40

CPC classification number: C23C16/45529 ,  C23C16/45553 ,  C23C16/56 ,  C23C16/402 ,  C23C16/405

Abstract: Provided is a method for forming a TiO2—SiO2 laminated layer for suppressing a crystallization of TiO2 layer. In one embodiment, a TiO2—SiO2 laminated layer may be formed by alternately forming and stacking a TiO2 layer and a SiO2 layer by plasma atomic layer deposition. A TiO2—SiO2 laminated layer has a high film strength compared to the conventional SiO2 layer and a crystallization of TiO2 layer is suppressed by forming a laminated layer and controlling a cycle ratio of the step of forming a TiO2 layer to the step of forming a SiO2 layer.

公开(公告)号：US20240377145A1

公开(公告)日：2024-11-14

申请号：US18654213

申请日：2024-05-03

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  KwangMan Ko ,  Juill Lee

IPC: F28F3/12 ,  H01L21/67

Abstract: Disclosed is a heat shielding device which shields heat from a chamber wall to the outside by creating one or more gas insulating layers around a chamber heated to a high temperature, thereby reducing heat loss, power consumed when heating the chamber to a certain temperature, minimizing the effect of heat to another chamber and reducing safety problems such as burning of an operator.