公开(公告)号：US20140192333A1

公开(公告)日：2014-07-10

申请号：US14202835

申请日：2014-03-10

Applicant: ASML Holding N.V

Inventor： Harry SEWELL ,  Mircea Dusa ,  Richard Johannes Franciscus Van Haren ,  Manfred Gawein Tenner ,  Maya Angelova Doytcheva

IPC: G03F9/00

CPC classification number: G03F9/7046 ,  G03F7/0035 ,  G03F7/105 ,  G03F7/70466 ,  G03F9/7076 ,  H01L21/0273 ,  H01L21/32139

Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).

Abstract translation: 提供光刻制造半导体器件的系统和方法以及涉及具有添加到第一或第二光刻图案上的染料的光刻双重图案化工艺的制品。 该染料用于检测第一光刻图案的位置，并将第二光刻图案直接对准。 染料可以是在指定波长或给定波长带处的荧光，发光，吸收或反射。 波长可对应于对准光束的波长。 染料允许检测第一光刻图案，即使当其涂覆有辐射敏感层（例如抗蚀剂）时。

公开(公告)号：US08980724B2

公开(公告)日：2015-03-17

申请号：US14202835

申请日：2014-03-10

Applicant: ASML Holding N.V. ,  ASML Netherlands B.V.

Inventor： Harry Sewell ,  Mircea Dusa ,  Richard Johannes Franciscus Van Haren ,  Manfred Gawein Tenner ,  Maya Angelova Doytcheva

IPC: H01L21/76 ,  G03F9/00 ,  G03F7/00 ,  G03F7/105 ,  G03F7/20 ,  H01L21/027 ,  H01L21/3213

CPC classification number: G03F9/7046 ,  G03F7/0035 ,  G03F7/105 ,  G03F7/70466 ,  G03F9/7076 ,  H01L21/0273 ,  H01L21/32139

Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).

Abstract translation: 提供光刻制造半导体器件的系统和方法以及涉及具有添加到第一或第二光刻图案上的染料的光刻双重图案化工艺的制品。 该染料用于检测第一光刻图案的位置，并将第二光刻图案直接对准。 染料可以是在指定波长或给定波长带处的荧光，发光，吸收或反射。 波长可对应于对准光束的波长。 染料允许检测第一光刻图案，即使当其涂覆有辐射敏感层（例如抗蚀剂）时。

公开(公告)号：US10656536B2

公开(公告)日：2020-05-19

申请号：US15308598

申请日：2015-04-23

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Martinus Hendrikus Antonius Leenders ,  Niek Elout De Kruijf ,  Mircea Dusa ,  Martijn Houben ,  Johannes Gerardus Maria Mulder ,  Thomas Poiesz ,  Marco Adrianus Peter Van Den Heuvel ,  Paul Van Dongen ,  Justin Johannes Hermanus Gerritzen ,  Antonie Hendrik Verweij ,  Abraham Alexander Soethoudt

IPC: B25B11/00 ,  G03F7/20 ,  H01L21/683

Abstract: A substrate support, includes: a substrate support location configured to support a substrate, and a vacuum clamping device configured to clamp the substrate on the substrate support location, wherein the vacuum clamping device includes at least one reduced pressure source to create a reduced pressure, at least one vacuum section connected to the at least one reduced pressure source, wherein the at least one vacuum section is configured to attract the substrate towards the substrate support location, and a control device configured to control a spatial pressure profile along the at least one vacuum section with which the substrate is attracted by the vacuum clamping device, wherein the control device includes a substrate shape data input to receive substrate shape data representing shape data of the substrate to be clamped, and wherein the control device is configured to adapt the spatial pressure profile in dependency of the substrate shape data.