公开(公告)号：US08980724B2

公开(公告)日：2015-03-17

申请号：US14202835

申请日：2014-03-10

Applicant: ASML Holding N.V. ,  ASML Netherlands B.V.

Inventor： Harry Sewell ,  Mircea Dusa ,  Richard Johannes Franciscus Van Haren ,  Manfred Gawein Tenner ,  Maya Angelova Doytcheva

IPC: H01L21/76 ,  G03F9/00 ,  G03F7/00 ,  G03F7/105 ,  G03F7/20 ,  H01L21/027 ,  H01L21/3213

CPC classification number: G03F9/7046 ,  G03F7/0035 ,  G03F7/105 ,  G03F7/70466 ,  G03F9/7076 ,  H01L21/0273 ,  H01L21/32139

Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).

Abstract translation: 提供光刻制造半导体器件的系统和方法以及涉及具有添加到第一或第二光刻图案上的染料的光刻双重图案化工艺的制品。 该染料用于检测第一光刻图案的位置，并将第二光刻图案直接对准。 染料可以是在指定波长或给定波长带处的荧光，发光，吸收或反射。 波长可对应于对准光束的波长。 染料允许检测第一光刻图案，即使当其涂覆有辐射敏感层（例如抗蚀剂）时。

公开(公告)号：US20150205213A1

公开(公告)日：2015-07-23

申请号：US14420311

申请日：2013-06-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Hakki Ergun Cekli ,  Irina Lyulina ,  Manfred Gawein Tenner ,  Richard Johannes Franciscus Van Haren ,  Stefan Cornelis Theodorus Van Der Sanden

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70258 ,  G03F7/70483 ,  G03F7/70616 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7019

Abstract: A deformation pattern recognition method including providing one or more deformation patterns, each deformation pattern being associated with a deformation of a substrate that may be caused by a processing device; transferring a first pattern to a substrate, the first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position; processing the substrate; measuring a position of N alignment marks and determining an alignment mark displacement for the N alignment marks by comparing the respective nominal position with the respective measured position; fitting at least one deformation pattern to the measured alignment mark displacements; determining an accuracy value for each fitted deformation pattern, the accuracy value being representative of the accuracy of the corresponding fit; using the determined accuracy value, determining whether an associated deformation pattern is present.

Abstract translation: 一种变形图案识别方法，包括提供一个或多个变形图案，每个变形图案与可由处理装置引起的基板的变形相关联; 将第一图案转印到基板，所述第一图案至少包括N个对准标记，其中每个对准标记位于相应的预定标称位置; 处理基板; 通过将相应的标称位置与相应的测量位置进行比较来测量N个对准标记的位置并确定N个对准标记的对准标记位移; 将至少一个变形图案拟合到所测量的对准标记位移; 确定每个拟合变形模式的精度值，精度值代表相应拟合精度; 使用所确定的精度值，确定是否存在相关联的变形模式。

公开(公告)号：US09753377B2

公开(公告)日：2017-09-05

申请号：US14420311

申请日：2013-06-27

Applicant: ASML Netherlands B.V.

Inventor： Hakki Ergun Cekli ,  Irina Lyulina ,  Manfred Gawein Tenner ,  Richard Johannes Franciscus Van Haren ,  Stefan Cornelis Theodorus Van Der Sanden

IPC: G03B27/32 ,  G03B27/74 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70258 ,  G03F7/70483 ,  G03F7/70616 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7019

Abstract: A deformation pattern recognition method including providing one or more deformation patterns, each deformation pattern being associated with a deformation of a substrate that may be caused by a processing device; transferring a first pattern to a substrate, the first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position; processing the substrate; measuring a position of N alignment marks and determining an alignment mark displacement for the N alignment marks by comparing the respective nominal position with the respective measured position; fitting at least one deformation pattern to the measured alignment mark displacements; determining an accuracy value for each fitted deformation pattern, the accuracy value being representative of the accuracy of the corresponding fit; using the determined accuracy value, determining whether an associated deformation pattern is present.

公开(公告)号：US20140192333A1

公开(公告)日：2014-07-10

申请号：US14202835

申请日：2014-03-10

Applicant: ASML Holding N.V

Inventor： Harry SEWELL ,  Mircea Dusa ,  Richard Johannes Franciscus Van Haren ,  Manfred Gawein Tenner ,  Maya Angelova Doytcheva

IPC: G03F9/00

CPC classification number: G03F9/7046 ,  G03F7/0035 ,  G03F7/105 ,  G03F7/70466 ,  G03F9/7076 ,  H01L21/0273 ,  H01L21/32139

Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).

Abstract translation: 提供光刻制造半导体器件的系统和方法以及涉及具有添加到第一或第二光刻图案上的染料的光刻双重图案化工艺的制品。 该染料用于检测第一光刻图案的位置，并将第二光刻图案直接对准。 染料可以是在指定波长或给定波长带处的荧光，发光，吸收或反射。 波长可对应于对准光束的波长。 染料允许检测第一光刻图案，即使当其涂覆有辐射敏感层（例如抗蚀剂）时。