公开(公告)号：US10359705B2

公开(公告)日：2019-07-23

申请号：US15764875

申请日：2016-09-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng Wang

IPC: G03F7/20 ,  H01L21/66 ,  H01L21/027

Abstract: A method including measuring a value of a directly measureable processing parameter of a patterning process from a portion of a substrate produced by the patterning process; obtaining a relationship between the directly measureable processing parameter and a not directly measureable processing parameter; and determining a value of the not directly measureable processing parameter from the value of the directly measureable processing parameter and the relationship.

公开(公告)号：US11243473B2

公开(公告)日：2022-02-08

申请号：US16615207

申请日：2018-05-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng Wang ,  Qian Zhao

IPC: G03F7/20 ,  G03F1/86

Abstract: A method involving obtaining a simulation of a contour of a pattern to be formed on a substrate using a patterning process, determining a location of an evaluation point on the simulated contour of the pattern, the location spatially associated with a location of a corresponding evaluation point on a design layout for the pattern, and producing electronic information corresponding to a spatial bearing between the location of the evaluation point on the simulated contour and the location of the corresponding evaluation point on the design layout, wherein the information corresponding to the spatial bearing is configured for determining a location of an evaluation point on a measured image of at least part of the pattern, the evaluation point on the measured image spatially associated with the corresponding evaluation point on the design layout.

公开(公告)号：US11592752B2

公开(公告)日：2023-02-28

申请号：US16875643

申请日：2020-05-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng Wang ,  Xiang Wan

IPC: G03F7/20

Abstract: A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yielded unacceptable patterned structures on the one or more substrates at corresponding inspection locations.

公开(公告)号：US11029609B2

公开(公告)日：2021-06-08

申请号：US16467675

申请日：2017-12-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng Wang

IPC: G03F7/20

Abstract: A method including: simulating an image or characteristics thereof, using characteristics of a design layout and of a patterning process, determining deviations between the image or characteristics thereof and the design layout or characteristics thereof; aligning a metrology image obtained from a patterned substrate and the design layout based on the deviations, wherein the patterned substrate includes a pattern produced from the design layout using the patterning process; and determining a parameter of a patterned substrate from the metrology image aligned with the design layout.

公开(公告)号：US10852646B2

公开(公告)日：2020-12-01

申请号：US16300314

申请日：2017-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Marinus Jochemsen ,  Scott Anderson Middlebrooks ,  Stefan Hunsche ,  Te-Sheng Wang

IPC: G03F7/20

Abstract: A method including obtaining an image of a plurality of structures on a substrate, wherein each of the plurality of structures is formed onto the substrate by transferring a corresponding pattern of a design layout; obtaining, from the image, a displacement for each of the structures with respect to a reference point for that structure; and assigning each of the structures into one of a plurality of groups based on the displacement.

公开(公告)号：US10372043B2

公开(公告)日：2019-08-06

申请号：US15534391

申请日：2015-12-11

Applicant: ASML Netherlands B.V.

Inventor： Gang Chen ,  Te-Sheng Wang

IPC: G03F7/20

Abstract: A method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method including: obtaining a relationship of a characteristic of one or more features in the portion with respect to dose; obtaining a value of the characteristic; and obtaining a target dose based on the value of the characteristic and the relationship.

公开(公告)号：US12197134B2

公开(公告)日：2025-01-14

申请号：US18090750

申请日：2022-12-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng Wang ,  Xiang Wan

IPC: G03F7/20 ,  G03F7/00

Abstract: A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yielded unacceptable patterned structures on the one or more substrates at corresponding inspection locations.

公开(公告)号：US11669018B2

公开(公告)日：2023-06-06

申请号：US17338927

申请日：2021-06-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng Wang

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/705 ,  G03F7/7065 ,  G03F7/70433 ,  G03F7/70616

Abstract: A method including: simulating an image or characteristics thereof, using characteristics of a design layout and of a patterning process, determining deviations between the image or characteristics thereof and the design layout or characteristics thereof; aligning a metrology image obtained from a patterned substrate and the design layout based on the deviations, wherein the patterned substrate includes a pattern produced from the design layout using the patterning process; and determining a parameter of a patterned substrate from the metrology image aligned with the design layout.

公开(公告)号：US10656531B2

公开(公告)日：2020-05-19

申请号：US16061501

申请日：2016-12-08

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng Wang ,  Xiang Wan

IPC: G03F7/20

Abstract: A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yield unacceptable patterned structures on the one or more substrates at corresponding inspection locations.