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公开(公告)号：US10474043B2
公开(公告)日：2019-11-12
申请号：US15841811
申请日：2017-12-14
Applicant: ASML Netherlands B.V.
Inventor： Patrick Warnaar , Maurits Van Der Schaar , Grzegorz Grzela , Erik Johan Koop , Victor Emanuel Calado , Si-Han Zeng
Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising: measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured Wt times, where Wt is an integer greater than 2 so as to obtain N*Wt measurement values; and determining R property values using Q equations and the N*Wt measurement values, where R
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公开(公告)号：US10474045B2
公开(公告)日：2019-11-12
申请号：US15737990
申请日：2016-06-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Franciscus Godefridus Casper Bijnen , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Patricius Aloysius Jacobus Tinnemans , Alexander Ypma , Irina Anatolievna Lyulina , Edo Maria Hulsebos , Hakki Ergün Cekli , Xing Lan Liu , Loek Johannes Petrus Verhees , Victor Emanuel Calado , Leon Paul Van Dijk
Abstract: A method of characterizing a deformation of a plurality of substrates is described. The method includes: measuring, for a plurality of n different alignment measurement parameters λ and for a plurality of substrates, a position of the alignment marks; determining a positional deviation as the difference between the n alignment mark position measurements and a nominal alignment mark position; grouping the positional deviations into data sets; determining an average data set; subtracting the average data set from the data sets to obtain a plurality of variable data sets; performing a blind source separation method on the variable data sets, thereby decomposing the variable data sets into a set of eigenwafers representing principal components of the variable data sets; and subdividing the set of eigenwafers into a set of mark deformation eigenwafers and a set of substrate deformation eigenwafers.
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公开(公告)号：US10788761B2
公开(公告)日：2020-09-29
申请号：US16344831
申请日：2017-10-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Leon Paul Van Dijk , Victor Emanuel Calado , Xing Lan Liu , Richard Johannes Franciscus Van Haren
Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.
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公开(公告)号：US10162272B2
公开(公告)日：2018-12-25
申请号：US15240781
申请日：2016-08-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Martin Jacobus Johan Jak , Hendrik Jan Hidde Smilde , Te-Chih Huang , Victor Emanuel Calado , Henricus Wilhelmus Maria Van Buel , Richard Johannes Franciscus Van Haren
Abstract: A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.
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Patent Agency Ranking
公开(公告)号：US11187995B2
公开(公告)日：2021-11-30
申请号：US16346135
申请日：2017-11-01
Applicant: ASML NETHERLANDS B.V.
Inventor： Victor Emanuel Calado , Youping Zhang , Maurits Van Der Schaar , Richard Johannes Franciscus Van Haren , Xing Lan Liu
IPC: G03F7/20
Abstract: A method of measuring a parameter of a patterning process, the method including obtaining a measurement of a substrate processed by a patterning process, with a first metrology target measurement recipe; obtaining a measurement of the substrate with a second, different metrology target measurement recipe, wherein measurements using the first and second metrology target measurement recipes have their own distinct sensitivity to a metrology target structural asymmetry of the patterning process; and determining a value of the parameter by a weighted combination of the measurements of the substrate using the first and second metrology target measurement recipes, wherein the weighting reduces or eliminates the effect of the metrology target structural geometric asymmetry on the parameter of the patterning process determined from the measurements using the first and second metrology target measurement recipes.
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6.发明申请公开(公告)号：US20180173105A1
公开(公告)日：2018-06-21
申请号：US15841811
申请日：2017-12-14
Applicant: ASML Netherlands B.V.
Inventor： Patrick Warnaar , Maurits Van Der Schaar , Grzegorz Grzela , Erik Johan Koop , Victor Emanuel Calado , Si-Han Zeng
Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising: measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured Wt times, where Wt is an integer greater than 2 so as to obtain N*Wt measurement values; and determining R property values using Q equations and the N*Wt measurement values, where R
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公开(公告)号：US12276921B2
公开(公告)日：2025-04-15
申请号：US17923913
申请日：2021-04-21
Applicant: ASML Netherlands B.V.
Inventor： Olger Victor Zwier , Maurits Van Der Schaar , Hilko Dirk Bos , Hans Van Der Laan , S. M. Masudur Rahman Al Arif , Henricus Wilhelmus Maria Van Buel , Armand Eugene Albert Koolen , Victor Emanuel Calado , Kaustuve Bhattacharyya , Jin Lian , Sebastianus Adrianus Goorden , Hui Quan Lim
IPC: G03F7/00
Abstract: Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.
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公开(公告)号：US11320750B2
公开(公告)日：2022-05-03
申请号：US17032249
申请日：2020-09-25
Applicant: ASML NETHERLANDS B.V.
Inventor： Leon Paul Van Dijk , Victor Emanuel Calado , Xing Lan Liu , Richard Johannes Franciscus Van Haren
Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.
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公开(公告)号：US11300887B2
公开(公告)日：2022-04-12
申请号：US16463057
申请日：2017-11-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Victor Emanuel Calado , Leon Paul Van Dijk , Roy Werkman , Everhardus Cornelis Mos , Jochem Sebastiaan Wildenberg , Marinus Jochemsen , Bijoy Rajasekharan , Erik Jensen , Adam Jan Urbanczyk
IPC: G03F7/20
Abstract: A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.
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