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    Systems and methods of optimal metrology guidance
    2.
    发明授权
    Systems and methods of optimal metrology guidance 有权

    公开(公告)号：US11216938B2

    公开(公告)日：2022-01-04

    申请号：US16554110

    申请日：2019-08-28

    Applicant: ASML Netherlands B.V.

    Inventor： Lingling Pu ,  Wei Fang ,  Nan Zhao ,  Wentian Zhou ,  Teng Wang ,  Ming Xu

    IPC: G06T7/00 ,  G06T7/60 ,  H01L21/66

    Abstract: Systems and methods for optimal electron beam metrology guidance are disclosed. According to certain embodiments, the method may include receiving an acquired image of a sample, determining a set of image parameters based on an analysis of the acquired image, determining a set of model parameters based on the set of image parameters, generating a set of simulated images based on the set of model parameters. The method may further comprise performing measurement of critical dimensions on the set of simulated images and comparing critical dimension measurements with the set of model parameters to provide a set of guidance parameters based on comparison of information from the set of simulated images and the set of model parameters. The method may further comprise receiving auxiliary information associated with target parameters including critical dimension uniformity.

    Fully automated SEM sampling system for e-beam image enhancement
    3.
    发明授权
    Fully automated SEM sampling system for e-beam image enhancement 有权

    公开(公告)号：US12230013B2

    公开(公告)日：2025-02-18

    申请号：US18365134

    申请日：2023-08-03

    Applicant: ASML Netherlands B.V.

    Inventor： Wentian Zhou ,  Liangjiang Yu ,  Teng Wang ,  Lingling Pu ,  Wei Fang

    IPC: G06T7/00 ,  G06F18/214 ,  G06V10/774 ,  G06V10/776 ,  G06V10/98

    Abstract: Disclosed herein is a method of automatically obtaining training images to train a machine learning model that improves image quality. The method may comprise analyzing a plurality of patterns of data relating to a layout of a product to identify a plurality of training locations on a sample of the product to use in relation to training the machine learning model. The method may comprise obtaining a first image having a first quality for each of the plurality of training locations, and obtaining a second image having a second quality for each of the plurality of training locations, the second quality being higher than the first quality. The method may comprise using the first image and the second image to train the machine learning model.

    Method and apparatus for adaptive alignment
    5.
    发明授权
    Method and apparatus for adaptive alignment 有权

    公开(公告)号：US11308635B2

    公开(公告)日：2022-04-19

    申请号：US16657897

    申请日：2019-10-18

    Applicant: ASML Netherlands B.V.

    Inventor： Wei Fang ,  Lingling Pu

    IPC: G06T7/33 ,  G06T7/73 ,  G06T7/13 ,  G06T7/00 ,  H01L21/67 ,  H01L21/66

    Abstract: A method for aligning a wafer image with a reference image, comprising: searching for a targeted reference position on the wafer image for aligning the wafer image with the reference image; and in response to a determination that the targeted reference position does not exist: defining a current lock position and an area that encloses the current lock position on the wafer image; computing an alignment score of the current lock position; comparing the alignment score of the current lock position with stored alignment scores of positions previously selected in relation to aligning the wafer image with the reference image; and aligning the wafer image with the reference image based on the comparison.

    System and method for defect inspection using voltage contrast in a charged particle system
    6.
    发明授权
    System and method for defect inspection using voltage contrast in a charged particle system 有权

    公开(公告)号：US12191112B2

    公开(公告)日：2025-01-07

    申请号：US17786190

    申请日：2020-12-17

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Wei Fang ,  Zhengwei Zhou ,  Lingling Pu

    IPC: H01J37/24 ,  H01J37/244 ,  H01J37/26 ,  H01J37/28

    Abstract: A system and method for defect inspection using voltage contrast in a charged particle system are provided. Some embodiments of the system and method include positioning the stage at a first position to enable a first beam of the plurality of beams to scan a first surface area of the wafer at a first time to generate a first image associated with the first surface area; positioning the stage at a second position to enable a second beam of the plurality of beams to scan the first surface area at a second time to generate a second image associated with the first surface area; and comparing the first image with the second image to enable detecting whether a defect is identified in the first surface area of the wafer.

    In-die metrology methods and systems for process control
    7.
    发明授权
    In-die metrology methods and systems for process control 有权

    公开(公告)号：US12040187B2

    公开(公告)日：2024-07-16

    申请号：US17985087

    申请日：2022-11-10

    Applicant: ASML Netherlands B.V.

    Inventor： Lingling Pu ,  Wei Fang ,  Zhong-wei Chen

    IPC: H01L21/02 ,  G03F7/00 ,  G06F30/39 ,  H01J37/147 ,  H01J37/244

    CPC classification number: H01L21/02691 ,  G03F7/70625 ,  G03F7/70633 ,  G06F30/39 ,  H01J37/1471 ,  H01J37/244

    Abstract: Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to be added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.

    Systems and methods of optimal metrology guidance
    9.
    发明授权
    Systems and methods of optimal metrology guidance 有权

    公开(公告)号：US11756187B2

    公开(公告)日：2023-09-12

    申请号：US17567847

    申请日：2022-01-03

    Applicant: ASML Netherlands B.V.

    Inventor： Lingling Pu ,  Wei Fang ,  Nan Zhao ,  Wentian Zhou ,  Teng Wang ,  Ming Xu

    IPC: G06T7/00 ,  G06T7/60 ,  H01L21/66

    CPC classification number: G06T7/001 ,  G06T7/60 ,  G06T2207/10061 ,  G06T2207/30148 ,  G06T2207/30168 ,  H01L22/12

    Abstract: Systems and methods for optimal electron beam metrology guidance are disclosed. According to certain embodiments, the method may include receiving an acquired image of a sample, determining a set of image parameters based on an analysis of the acquired image, determining a set of model parameters based on the set of image parameters, generating a set of simulated images based on the set of model parameters. The method may further comprise performing measurement of critical dimensions on the set of simulated images and comparing critical dimension measurements with the set of model parameters to provide a set of guidance parameters based on comparison of information from the set of simulated images and the set of model parameters. The method may further comprise receiving auxiliary information associated with target parameters including critical dimension uniformity.

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