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公开(公告)号：US20240046620A1
公开(公告)日：2024-02-08
申请号：US18365134
申请日：2023-08-03
Applicant: ASML Netherlands B.V.
Inventor： Wentian ZHOU , Liangjiang YU , Teng WANG , Lingling PU , Wei FANG
IPC: G06V10/774 , G06T7/00 , G06F18/214 , G06V10/776 , G06V10/98
CPC classification number: G06V10/774 , G06T7/0006 , G06F18/214 , G06V10/776 , G06V10/993 , G06T2207/10061 , G06T2207/20081 , G06T2207/30148
Abstract: Disclosed herein is a method of automatically obtaining training images to train a machine learning model that improves image quality. The method may comprise analyzing a plurality of patterns of data relating to a layout of a product to identify a plurality of training locations on a sample of the product to use in relation to training the machine learning model. The method may comprise obtaining a first image having a first quality for each of the plurality of training locations, and obtaining a second image having a second quality for each of the plurality of training locations, the second quality being higher than the first quality. The method may comprise using the first image and the second image to train the machine learning model.
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公开(公告)号：US20230028799A1
公开(公告)日：2023-01-26
申请号：US17785896
申请日：2020-12-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Wei FANG , Zhong-wei CHEN
IPC: H01J37/24 , H01J37/075 , H01J37/073
Abstract: Apparatuses, methods, and systems for ultra-fast beam current adjustment for a charged-particle inspection system include an charged-particle source configured to emit charged particles for scanning a sample; and an emission booster configured to configured to irradiate electromagnetic radiation onto the charged-particle source for boosting charged-particle emission in a first cycle of a scanning operation of the charged-particle inspection system, and to stop irradiating the electromagnetic radiation in a second cycle of the scanning operation.
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公开(公告)号：US20220301811A1
公开(公告)日：2022-09-22
申请号：US17633176
申请日：2020-08-20
Applicant: ASML Netherlands B.V.
Inventor： Wei FANG , Lingling PU , Bo WANG , Zhonghua DONG , Yongxin WANG
IPC: H01J37/22 , H01J37/244 , H01J37/28 , G01N23/2251 , G06T5/00 , G06T5/50
Abstract: An improved apparatus and method for enhancing an image, and more particularly an apparatus and method for enhancing an image through cross-talk cancellation in a multiple charged-particle beam inspection are disclosed. An improved method for enhancing an image includes acquiring a first image signal of a plurality of image signals from a detector of a multi-beam inspection system. The first image signal corresponds to a detected signal from a first region of the detector on which electrons of a first secondary electron beam and of a second secondary electron beam are incident. The method includes reducing, from the first image signal, cross-talk contamination originating from the second secondary electron beam using a relationship between the first image signal and beam intensities associated with the first secondary electron beam and the second secondary electron beam. The method further includes generating a first image corresponding to first secondary electron beam after reduction.
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公开(公告)号：US20210350507A1
公开(公告)日：2021-11-11
申请号：US17308835
申请日：2021-05-05
Applicant: ASML Netherlands B.V.
Inventor： Wei FANG , Ruochong FEI , Lingling PU , Wentian ZHOU , Liangjiang YU , Bo WANG
Abstract: An improved method and apparatus for enhancing an inspection image in a charged-particle beam inspection system. An improved method for enhancing an inspection image comprises acquiring a first image and a second image of multiple stacked layers of a sample that are taken with a first focal point and a second focal point, respectively, associating a first segment of the first image with a first layer among the multiple stacked layers and associating a second segment of the second image with a second layer among the multiple stacked layers, updating the first segment based on a first reference image corresponding to the first layer and updating the second segment based on a second reference image corresponding to the second layer, and combining the updated first segment and the updated second segment to generate a combined image including the first layer and the second layer.
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公开(公告)号：US20210241449A1
公开(公告)日：2021-08-05
申请号：US17268863
申请日：2019-08-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Fuming WANG , Stefan HUNSCHE , Wei FANG
Abstract: A method for correcting metrology data of a patterning process. The method includes obtaining (i) metrology data of a substrate subjected to the patterning process and (ii) a quality metric (e.g., a focus index) that quantifies a quality of the metrology data of the substrate; establishing a correlation between the quality metric and the metrology data; and determining a correction to the metrology data based on the correlation between the quality metric and the metrology data.
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Patent Agency Ranking
公开(公告)号：US20200334446A1
公开(公告)日：2020-10-22
申请号：US16959415
申请日：2018-12-19
Applicant: ASML Netherlands B.V.
Inventor： Wei FANG
IPC: G06K9/00 , G01R31/307
Abstract: Systems and methods for detecting defects are disclosed. According to certain embodiments, a method of performing image processing includes acquiring one or more images of a sample, performing first image analysis on the one or more images, identifying a plurality of first features in the one or more images, determining pattern data corresponding to the plurality of first features, selecting at least one of the plurality of first features based on the pattern data, and performing second image analysis of the at least one of the plurality of first features. Methods may also include determining defect probability of the plurality of first features based on the pattern data. Selecting the at least one of the plurality of first features may be based on the defect probability.
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公开(公告)号：US20200027693A1
公开(公告)日：2020-01-23
申请号：US16517390
申请日：2019-07-19
Applicant: ASML Netherlands B.V.
IPC: H01J37/22 , G01N21/95 , G01N21/956 , H01J37/28 , H01J37/14 , H01J37/147 , H01J37/244
Abstract: A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.
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公开(公告)号：US20250006456A1
公开(公告)日：2025-01-02
申请号：US18787932
申请日：2024-07-29
Applicant: ASML Netherlands B.V.
Inventor： Wei FANG , Lingling PU , Bo WANG , Zhonghua DONG , Yongxin WANG
IPC: H01J37/22 , G01N23/2251 , G06T5/50 , G06T5/77 , G06T5/80 , H01J37/244 , H01J37/28
Abstract: An improved apparatus and method for enhancing an image, and more particularly an apparatus and method for enhancing an image through cross-talk cancellation in a multiple charged-particle beam inspection are disclosed. An improved method for enhancing an image includes acquiring a first image signal of a plurality of image signals from a detector of a multi-beam inspection system. The first image signal corresponds to a detected signal from a first region of the detector on which electrons of a first secondary electron beam and of a second secondary electron beam are incident. The method includes reducing, from the first image signal, cross-talk contamination originating from the second secondary electron beam using a relationship between the first image signal and beam intensities associated with the first secondary electron beam and the second secondary electron beam. The method further includes generating a first image corresponding to first secondary electron beam after reduction.
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公开(公告)号：US20230076943A1
公开(公告)日：2023-03-09
申请号：US17985087
申请日：2022-11-10
Applicant: ASML Netherlands B.V.
Inventor： Lingling PU , Wei FANG , Zhong-wei CHEN
Abstract: Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to he added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.
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公开(公告)号：US20200211845A1
公开(公告)日：2020-07-02
申请号：US16730897
申请日：2019-12-30
Applicant: ASML Netherlands B.V.
Inventor： Lingling PU , Wei FANG , Zhong-wei CHEN
Abstract: Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to be added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.
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