公开(公告)号：US20230046682A1

公开(公告)日：2023-02-16

申请号：US17886348

申请日：2022-08-11

Applicant: ASML Netherlands B.V.

Inventor： Fuming WANG ,  Marco Jan-Jaco WIELAND ,  Yu CAO ,  Guohong ZHANG

IPC: G03F1/86 ,  G03F7/20

Abstract: An improved methods and systems for detecting defect(s) on a mask are disclosed. An improved method comprises inspecting an exposed wafer after the wafer was exposed, by a lithography system using a mask, with a selected process condition that is determined based on a mask defect printability under the selected process condition; and identifying, based on the inspection, a wafer defect that is caused by a defect on the mask to enable identification of the defect on the mask.

公开(公告)号：US20230076218A1

公开(公告)日：2023-03-09

申请号：US17799019

申请日：2021-02-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Koenraad VAN INGEN SCHENAU ,  Abraham SLACHTER ,  Vadim Yourievich TIMOSHKOV ,  Marleen KOOIMAN ,  Marie-Claire VAN LARE ,  Hermanus Adrianus DILLEN ,  Stefan HUNSCHE ,  Luis Alberto Colina Sant COLINA ,  Aiqin JIANG ,  Fuming WANG ,  Sudharshanan RAGHUNATHAN

IPC: G03F7/20

Abstract: Methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of a characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining a probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.

公开(公告)号：US20210241449A1

公开(公告)日：2021-08-05

申请号：US17268863

申请日：2019-08-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Fuming WANG ,  Stefan HUNSCHE ,  Wei FANG

IPC: G06T7/00 ,  G03F7/20 ,  G06T7/73 ,  G06K9/62

Abstract: A method for correcting metrology data of a patterning process. The method includes obtaining (i) metrology data of a substrate subjected to the patterning process and (ii) a quality metric (e.g., a focus index) that quantifies a quality of the metrology data of the substrate; establishing a correlation between the quality metric and the metrology data; and determining a correction to the metrology data based on the correlation between the quality metric and the metrology data.

公开(公告)号：US20220327364A1

公开(公告)日：2022-10-13

申请号：US17638472

申请日：2020-07-31

Applicant: ASML NETHERLANDS B.V.

Inventor： Stefan HUNSCHE ,  Fuming WANG ,  Ya LUO ,  Pioter NIKOLSKI

IPC: G06N3/06 ,  G06N7/00 ,  G06T7/00

Abstract: Systems and methods for predicting substrate geometry associated with a patterning process are described. Input information including geometry information and/or process information for a pattern is received and, using a machine learning prediction model, multi-dimensional output substrate geometry is predicted. The multi-dimensional output information may include pattern probability images. A stochastic edge placement error band and/or a stochastic failure rate may be predicted. The input information can include simulated aerial images, simulated resist images, target substrate dimensions, and/or data from a lithography apparatus associated with device manufacturing. Different aerial images may correspond to different heights in resist layers associated with the patterning process, for example.

公开(公告)号：US20190271919A1

公开(公告)日：2019-09-05

申请号：US16461044

申请日：2018-05-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Davit HARUTYUNYAN ,  Fei JIA ,  Frank STAALS ,  Fuming WANG ,  Hugo Thomas LOOIJESTIJN ,  Cornelis Johannes RIJNIERSE ,  Maxim PISARENCO ,  Roy WERKMAN ,  Thomas THEEUWES ,  Tom VAN HEMERT ,  Vahid BASTANI ,  Jochem Sebastian WILDENBERG ,  Everhardus Cornelis MOS ,  Erik Johannes Maria WALLERBOS

IPC: G03F7/20

Abstract: A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method including: obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.