公开(公告)号：US20130343117A1

公开(公告)日：2013-12-26

申请号：US13708872

申请日：2012-12-07

Applicant: Agency for Science, Technology and Research

Inventor： Yan Hwee Sunny Lua ,  Aarthy Mani

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1697

Abstract: According to embodiments of the present invention, a writing circuit for a magnetoresistive memory cell is provided. The writing circuit includes a first connecting terminal configured to provide a first electrical signal to switch a variable magnetization orientation of the free magnetic layer from a first magnetization orientation to a second magnetization orientation; a second connecting terminal configured to provide a second electrical signal to switch the magnetization orientation from the second magnetization orientation to the first magnetization orientation; and a sourcing switch configured to provide for a write operation a connection of the first or second connecting terminal to a node coupleable to the magnetoresistive memory cell. The first and second electrical signals have different amplitudes, and the first and second electrical signals are of the same polarity. Further embodiments relate to a memory cell arrangement and a method of writing into a target magnetoresistive memory cell.

Abstract translation: 根据本发明的实施例，提供了一种用于磁阻存储单元的写入电路。 写入电路包括第一连接端子，其被配置为提供第一电信号以将自由磁性层的可变磁化取向从第一磁化取向切换到第二磁化取向; 第二连接端子，被配置为提供第二电信号以将磁化取向从第二磁化取向切换到第一磁化取向; 以及源极开关，被配置为向写入操作提供第一或第二连接端子与可耦合到磁阻存储器单元的节点的连接。 第一和第二电信号具有不同的幅度，并且第一和第二电信号具有相同的极性。 另外的实施例涉及存储单元布置和写入目标磁阻存储单元的方法。

公开(公告)号：US20130343116A1

公开(公告)日：2013-12-26

申请号：US13708868

申请日：2012-12-07

Applicant: Agency for Science, Technology and Research

Inventor： Yan Hwee Sunny Lua ,  Kejie Huang

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/1653 ,  G11C11/1655 ,  G11C11/1673 ,  G11C11/5607

Abstract: A writing circuit for a magnetoresistive memory cell is provided. The writing circuit includes a first electrical connecting terminal, a second electrical connecting terminal, a third electrical connecting terminal, a fourth electrical connecting terminal, a first reference potential terminal, a second reference potential terminal, a first switch configured to couple one of the first electrical connecting terminal, the second electrical connecting terminal, the third electrical connecting terminal and the fourth electrical connecting terminal to the magnetoresistive memory cell, and a second switch configured to couple the first reference potential terminal to the magnetoresistive memory cell if the first electrical connecting terminal or the second electrical connecting terminal is coupled to the magnetoresistive memory cell, and to couple the second reference potential terminal to the magnetoresistive memory cell if the third electrical connecting terminal or the fourth electrical connecting terminal is coupled to the magnetoresistive memory cell.

Abstract translation: 提供了一种用于磁阻存储单元的写入电路。 写入电路包括第一电连接端子，第二电连接端子，第三电连接端子，第四电连接端子，第一参考电位端子，第二参考电位端子，第一开关，被配置为将第一电连接端子， 电连接端子，第二电连接端子，第三电连接端子和第四电连接端子连接到磁阻存储单元;以及第二开关，被配置为将第一参考电位端子耦合到磁阻存储单元，如果第一电连接端子 或者第二电连接端子耦合到磁阻存储器单元，并且如果第三电连接端子或第四电连接端子耦合到磁阻存储器单元，则将第二参考电位端子耦合到磁阻存储单元。

公开(公告)号：US09123884B2

公开(公告)日：2015-09-01

申请号：US13623741

申请日：2012-09-20

Applicant: Agency for Science, Technology and Research

Inventor： Yuanhong Luo ,  Rachid Sbiaa ,  Yan Hwee Sunny Lua

IPC: G11C11/00 ,  H01L43/08

CPC classification number: G11C11/1675 ,  G11C11/161 ,  H01L43/08

Abstract: According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes at least two ferromagnetic soft layers, wherein the at least two ferromagnetic soft layers have different ranges of magnetization switching frequencies. Further embodiments provide a magnetoresistive device including at least two oscillating ferromagnetic structures, wherein ranges of operating current amplitudes at which oscillations are induced for the at least two oscillating ferromagnetic structures are different. According to further embodiments of the present invention, writing methods for the magnetoresistive devices are provided.

Abstract translation: 根据本发明的实施例，提供了一种磁阻器件。 磁阻器件包括至少两个铁磁软层，其中至少两个铁磁软层具有不同的磁化开关频率范围。 另外的实施例提供包括至少两个振荡铁磁结构的磁阻器件，其中为至少两个振荡铁磁结构引起振荡的工作电流幅度的范围是不同的。 根据本发明的另外的实施例，提供了用于磁阻器件的写入方法。