公开(公告)号：US07226844B2

公开(公告)日：2007-06-05

申请号：US11091950

申请日：2005-03-28

Applicant: Alain Chantre ,  Pascal Chevalier

Inventor： Alain Chantre ,  Pascal Chevalier

IPC: H01L21/331

CPC classification number: H01L29/66242 ,  H01L29/1004 ,  H01L29/7378

Abstract: A method forms a bipolar transistor in a semiconductor substrate of a first conductivity type. The method includes: forming on the substrate a single-crystal silicon-germanium layer; forming a heavily-doped single-crystal silicon layer of a second conductivity type; forming a silicon oxide layer; opening a window in the silicon oxide and silicon layers; forming on the walls of the window a silicon nitride spacer; removing the silicon-germanium layer from the bottom of the window; forming in the cavity resulting from the previous removal a heavily-doped single-crystal semiconductor layer of the second conductivity type; and forming in said window the emitter of the transistor.

Abstract translation: 一种方法在第一导电类型的半导体衬底中形成双极晶体管。 该方法包括：在衬底上形成单晶硅锗层; 形成第二导电类型的重掺杂单晶硅层; 形成氧化硅层; 在硅氧化物和硅层中开一个窗口; 在窗的壁上形成氮化硅间隔物; 从窗户的底部去除硅 - 锗层; 在先前去除的过程中形成在第二导电类型的重掺杂单晶半导体层的空腔中; 并在所述窗口中形成晶体管的发射极。

公开(公告)号：US07122879B2

公开(公告)日：2006-10-17

申请号：US10942165

申请日：2004-09-16

Applicant: Alain Chantre ,  Bertrand Martinet ,  Michel Marty ,  Pascal Chevalier

Inventor： Alain Chantre ,  Bertrand Martinet ,  Michel Marty ,  Pascal Chevalier

IPC: H01L27/02 ,  H01L29/70 ,  H01L31/11

CPC classification number: H01L29/66242 ,  H01L21/8249 ,  H01L29/0817 ,  H01L29/36 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/456 ,  H01L29/7378

Abstract: A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.

Abstract translation: 具有非常高动态性能的双极晶体管，可用于集成电路。 双极晶体管具有厚度小于50nm的单晶硅发射极区域。 双极晶体管的基极由SiGe合金制成。

公开(公告)号：US20060054998A1

公开(公告)日：2006-03-16

申请号：US10942165

申请日：2004-09-16

Applicant: Alain Chantre ,  Bertrand Martinet ,  Michel Marty ,  Pascal Chevalier

Inventor： Alain Chantre ,  Bertrand Martinet ,  Michel Marty ,  Pascal Chevalier

IPC: H01L27/082

CPC classification number: H01L29/66242 ,  H01L21/8249 ,  H01L29/0817 ,  H01L29/36 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/456 ,  H01L29/7378

Abstract: A novel bipolar transistor with very high dynamic performances, usable in an integrated circuit. This bipolar transistor comprises a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.

Abstract translation: 一种具有非常高动态性能的新型双极晶体管，可用于集成电路。 该双极晶体管包括厚度小于50nm的单晶硅发射极区域。 双极晶体管的基极由SiGe合金制成。

公开(公告)号：US07615455B2

公开(公告)日：2009-11-10

申请号：US11523770

申请日：2006-09-19

Applicant: Pascal Chevalier ,  Alain Chantre

Inventor： Pascal Chevalier ,  Alain Chantre

IPC: H01L21/331 ,  H01L27/082

CPC classification number: H01L29/66242 ,  H01L29/0649 ,  H01L29/1004 ,  H01L29/66287 ,  H01L29/732 ,  H01L29/7378

Abstract: A bipolar transistor having a base region resting by its lower surface on a collector region and surrounded with a first insulating layer, a base contact conductive region in contact with an external upper peripheral region of the base region, a second insulating region in contact with an intermediary upper peripheral region of the base region, an emitter region in contact with the central portion of the base region. The level of the central portion is higher than the level of the intermediary portion.

Abstract translation: 一种双极晶体管，具有由集电极区域的下表面固定并被第一绝缘层包围的基极区域，与基极区域的外部上部周边区域接触的基极接触导电区域，与第一绝缘区域接触的第二绝缘区域 基极区域的中间上部周边区域，与基极区域的中心部分接触的发射极区域。 中央部分的高度高于中间部分的高度。

公开(公告)号：US20070004161A1

公开(公告)日：2007-01-04

申请号：US11516067

申请日：2006-09-06

Applicant: Alain Chantre ,  Bertrand Martinet ,  Michel Marty ,  Pascal Chevalier

Inventor： Alain Chantre ,  Bertrand Martinet ,  Michel Marty ,  Pascal Chevalier

IPC: H01L21/331

CPC classification number: H01L29/66242 ,  H01L21/8249 ,  H01L29/0817 ,  H01L29/36 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/456 ,  H01L29/7378

Abstract: A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.

Abstract translation: 具有非常高动态性能的双极晶体管，可用于集成电路。 双极晶体管具有厚度小于50nm的单晶硅发射极区域。 双极晶体管的基极由SiGe合金制成。

公开(公告)号：US07824978B2

公开(公告)日：2010-11-02

申请号：US11516067

申请日：2006-09-06

Applicant: Alain Chantre ,  Bertrand Martinet ,  Michel Marty ,  Pascal Chevalier

Inventor： Alain Chantre ,  Bertrand Martinet ,  Michel Marty ,  Pascal Chevalier

IPC: H01L29/082

CPC classification number: H01L29/66242 ,  H01L21/8249 ,  H01L29/0817 ,  H01L29/36 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/456 ,  H01L29/7378

Abstract: A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.

Abstract translation: 具有非常高动态性能的双极晶体管，可用于集成电路。 双极晶体管具有厚度小于50nm的单晶硅发射极区域。 双极晶体管的基极由SiGe合金制成。

公开(公告)号：US20070063314A1

公开(公告)日：2007-03-22

申请号：US11523770

申请日：2006-09-19

Applicant: Pascal Chevalier ,  Alain Chantre

Inventor： Pascal Chevalier ,  Alain Chantre

IPC: H01L27/082

CPC classification number: H01L29/66242 ,  H01L29/0649 ,  H01L29/1004 ,  H01L29/66287 ,  H01L29/732 ,  H01L29/7378

Abstract: A bipolar transistor having a base region resting by its lower surface on a collector region and surrounded with a first insulating layer, a base contact conductive region in contact with an external upper peripheral region of the base region, a second insulating region in contact with an intermediary upper peripheral region of the base region, an emitter region in contact with the central portion of the base region. The level of the central portion is higher than the level of the intermediary portion.

Abstract translation: 一种双极晶体管，具有由集电极区域的下表面固定并被第一绝缘层包围的基极区域，与基极区域的外部上部周边区域接触的基极接触导电区域，与第一绝缘区域接触的第二绝缘区域 基极区域的中间上部周边区域，与基极区域的中心部分接触的发射极区域。 中央部分的高度高于中间部分的高度。

公开(公告)号：US20050215021A1

公开(公告)日：2005-09-29

申请号：US11091950

申请日：2005-03-28

Applicant: Alain Chantre ,  Pascal Chevalier

Inventor： Alain Chantre ,  Pascal Chevalier

IPC: H01L21/331 ,  H01L21/8222 ,  H01L29/10 ,  H01L29/737

CPC classification number: H01L29/66242 ,  H01L29/1004 ,  H01L29/7378

Abstract: A method forms a bipolar transistor in a semiconductor substrate of a first conductivity type. The method includes: forming on the substrate a single-crystal silicon-germanium layer; forming a heavily-doped single-crystal silicon layer of a second conductivity type; forming a silicon oxide layer; opening a window in the silicon oxide and silicon layers; forming on the walls of the window a silicon nitride spacer; removing the silicon-germanium layer from the bottom of the window; forming in the cavity resulting from the previous removal a heavily-doped single-crystal semiconductor layer of the second conductivity type; and forming in said window the emitter of the transistor.

Abstract translation: 一种方法在第一导电类型的半导体衬底中形成双极晶体管。 该方法包括：在衬底上形成单晶硅锗层; 形成第二导电类型的重掺杂单晶硅层; 形成氧化硅层; 在硅氧化物和硅层中开一个窗口; 在窗的壁上形成氮化硅间隔物; 从窗户的底部去除硅 - 锗层; 在先前去除的过程中形成在第二导电类型的重掺杂单晶半导体层的空腔中; 并在所述窗口中形成晶体管的发射极。

公开(公告)号：US20050037587A1

公开(公告)日：2005-02-17

申请号：US10914482

申请日：2004-08-09

Applicant: Bertrand Martinet ,  Michel Marty ,  Pascal Chevalier ,  Alain Chantre

Inventor： Bertrand Martinet ,  Michel Marty ,  Pascal Chevalier ,  Alain Chantre

IPC: H01L21/331 ,  H01L29/08 ,  H01L21/8222

CPC classification number: H01L29/66287 ,  H01L29/0817 ,  H01L29/66242

Abstract: A method for forming a heterojunction bipolar transistor including the steps of: forming in a semiconductor substrate a collector area of a first doping type; growing by epitaxy above a portion of the collector area a silicon/germanium layer of a second doping type forming a base area; forming above the silicon/germanium layer a sacrificial emitter formed of a material selectively etchable with respect to the silicon/germanium layer and with respect to the layers and consecutively-formed insulating spacers; forming first insulating spacers on the sides of the sacrificial emitter; growing by epitaxy a silicon layer above the exposed portions of the silicon/germanium layer; forming second insulating spacers adjacent to the first spacers and laid on the silicon layer; covering the entire structure with an insulating layer; partially removing the insulating layer above the sacrificial emitter and removing the sacrificial emitter; filling the space previously taken up by the sacrificial emitter with a semiconductor material of the first doping type.

Abstract translation: 一种用于形成异质结双极晶体管的方法，包括以下步骤：在半导体衬底中形成第一掺杂类型的集电极区域; 通过在集电区域的一部分上方的外延生长形成基区的第二掺杂类型的硅/锗层; 在硅/锗层之上形成由相对于硅/锗层可选择性地蚀刻的材料以及相对于层和连续形成的绝缘间隔物形成的牺牲发射体; 在所述牺牲发射体的侧面上形成第一绝缘间隔物; 通过将硅/锗层的暴露部分上的硅层外延生长; 形成与所述第一间隔物相邻的第二绝缘间隔物并铺设在所述硅层上; 用绝缘层覆盖整个结构; 部分去除牺牲发射体上方的绝缘层并去除牺牲发射极; 用第一掺杂类型的半导体材料填充先前由牺牲发射极占据的空间。

公开(公告)号：US07453399B2

公开(公告)日：2008-11-18

申请号：US10428015

申请日：2003-05-02

Applicant: Anne Ferreol ,  Pascal Chevalier ,  Laurent Albera

Inventor： Anne Ferreol ,  Pascal Chevalier ,  Laurent Albera

IPC: G01S5/02 ,  G01S3/16 ,  G06F17/16

CPC classification number: G06K9/6243 ,  G06K9/0057 ,  H04B7/0848

Abstract: An antenna processing method for centered or potentially non-centered cyclostationary signals, comprises at least one step in which one or more nth order estimators are obtained from r-order statistics, with r=1 to n−1, and for one or more values of r, it comprises a step for the correction of the estimator by means of r-order detected cyclic frequencies. The method can be applied to the separation of the emitter sources of the signals received by using the estimator or estimators.

Abstract translation: 一种用于居中或潜在非中心周期平稳信号的天线处理方法，包括至少一个步骤，其中从R阶统计得到一个或多个n阶估计器，其中r = 1至n-1，以及对于一个或多个值 的r，它包括用于通过r阶检测的循环频率来校正估计器的步骤。 该方法可以应用于通过使用估计器或估计器来分离接收到的信号的发射源。