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    Semiconductor device and a method of creating the same utilizing metal induced crystallization while suppressing partial solid phase crystallization
    1.
    发明授权
    Semiconductor device and a method of creating the same utilizing metal induced crystallization while suppressing partial solid phase crystallization 有权
    半导体装置及其制造方法，利用金属诱导结晶同时抑制部分固相结晶

    公开(公告)号：US06830965B1

    公开(公告)日：2004-12-14

    申请号：US09696813

    申请日：2000-10-25

    申请人： Apostolos Voutsas ,  Yukihiko Nakata ,  Takeshi Hosoda

    发明人： Apostolos Voutsas ,  Yukihiko Nakata ,  Takeshi Hosoda

    IPC分类号： H01L2100

    CPC分类号： H01L21/02532 ,  H01L21/02631 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/12 ,  H01L27/1277

    摘要： A metal induced crystallization process is provided which employs an amorphous silicon film precursor deposited by physical vapor deposition, wherein the precursor film does not readily undergo crystallization by partial solid phase crystallization. Using this physical vapor deposition amorphous silicon precursor film, the amorphous silicon film is transformed to polysilicon by metal induced crystallization wherein the crystalline growth occurs fastest at regions that have been augmented with a metal catalyst and proceeds extremely slowly, practically zero, at regions which bear no metal catalyst. Accordingly, by use of the physical vapor deposition amorphous silicon precursor film in the process of the present invention, the metal induced crystallization process may take place at higher annealing temperatures and shorter annealing times without solid phase crystallization taking place. The process has a faster throughput than previous metal induced crystallization processes, results in a polysilicon film having virtually no catalyst impurities remaining in the film, and results in a film having uniform material characteristics. The resulting polysilicon film may be utilized in thin film transistors or liquid crystal displays.

    摘要翻译： 提供了一种金属诱导结晶方法，其采用通过物理气相沉积沉积的非晶硅膜前体，其中前体膜不容易通过部分固相结晶进行结晶。 使用该物理气相沉积非晶硅前体膜，通过金属诱导结晶将非晶硅膜转变为多晶硅，其中在已经用金属催化剂增加的区域处的晶体生长最快发生，并且在承载的区域处极其缓慢地进行，实际上为零 无金属催化剂。 因此，通过在本发明的方法中使用物理气相沉积非晶硅前体膜，可以在更高的退火温度和较短的退火时间下进行金属诱导结晶过程，而不发生固相结晶。 该方法具有比先前的金属诱导结晶方法更快的生产量，导致几乎没有在膜中残留催化剂杂质的多晶硅膜，并且导致具有均匀材料特性的膜。 得到的多晶硅膜可用于薄膜晶体管或液晶显示器。

    Apparatus to sputter silicon films
    2.
    发明授权
    Apparatus to sputter silicon films 失效
    溅射硅膜的设备

    公开(公告)号：US06789499B2

    公开(公告)日：2004-09-14

    申请号：US10213816

    申请日：2002-08-06

    申请人： Apostolos Voutsas ,  Yukihiko Nakata

    发明人： Apostolos Voutsas ,  Yukihiko Nakata

    IPC分类号： C23C1600

    CPC分类号： C23C14/34 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02631

    摘要： A method of physical vapor deposition includes selecting a target material; mixing at least two gases to form a sputtering gas mixture, wherein a first sputtering gas is helium and a second sputtering gas is taken from the gases consisting of neon, argon krypton, xenon and radon; forming a plasma in the sputtering gas mixture atmosphere to sputter atoms from the target material to the substrate thereby forming a layer of target material on the substrate; and annealing the substrate and the deposited layer thereon. An improved physical vapor deposition vacuum chamber includes a target held in a target holder, a substrate held in a substrate holder, a plasma arc generator, and heating rods. A sputtering gas feed system is provided for introducing a mixture of sputtering gases into the chamber; as is a vacuum mechanism comprising at least one turbomolecular pump for evacuating the chamber to a pressure of less than 16 mTorr during deposition. The method and apparatus are particularly suited for forming thin film transistors and liquid crystal displays having thin film transistors therein.

    摘要翻译： 物理气相沉积的方法包括选择目标材料; 混合至少两种气体以形成溅射气体混合物，其中第一溅射气体是氦气，并且从由氖，氩氪，氙和氡组成的气体中取出第二溅射气体; 在溅射气体混合气氛中形成等离子体，以将原子从目标材料溅射到基板，从而在基板上形成目标材料层; 并在其上退火衬底和沉积层。 改进的物理气相沉积真空室包括保持在靶保持器中的靶，保持在衬底保持器中的衬底，等离子体电弧发生器和加热棒。 提供溅射气体供给系统，用于将溅射气体的混合物引入室中; 真空机构包括至少一个用于在沉积期间将室抽空至小于16mTorr的涡轮分子泵。 该方法和装置特别适用于形成薄膜晶体管和其中具有薄膜晶体管的液晶显示器。

    Method to sputter silicon films
    3.
    发明授权
    Method to sputter silicon films 失效
    溅射硅膜的方法

    公开(公告)号：US06429097B1

    公开(公告)日：2002-08-06

    申请号：US09576940

    申请日：2000-05-22

    申请人： Apostolos Voutsas ,  Yukihiko Nakata

    发明人： Apostolos Voutsas ,  Yukihiko Nakata

    IPC分类号： H01L2120

    CPC分类号： C23C14/34 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02631

    摘要： A method of physical vapor deposition includes selecting a target material; mixing at least two gases to form a sputtering gas mixture, wherein a first sputtering gas is helium and a second sputtering gas is taken from the gases consisting of neon, argon krypton, xenon and radon; forming a plasma in the sputtering gas mixture atmosphere to sputter atoms from the target material to the substrate thereby forming a layer of target material on the substrate and annealing the substrate and the deposited layer thereon. An improved physical vapor deposition vacuum chamber includes a target held in a target holder, a substrate held in a substrate holder, a plasma arc generator, and heating rods. A sputtering gas feed system is provided for introducing a mixture of sputtering gases into the chamber; as is a vacuum mechanism comprising at least one turbomolecular pump for evacuating the chamber to a pressure of less than 16 mTorr during deposition. The method and apparatus are particularly suited for forming thin film transistors and liquid crystal displays having thin film transistors therein.

    摘要翻译： 物理气相沉积的方法包括选择目标材料; 混合至少两种气体以形成溅射气体混合物，其中第一溅射气体是氦气，并且从由氖，氩氪，氙和氡组成的气体中取出第二溅射气体; 在溅射气体混合气氛中形成等离子体，将原子从目标材料溅射到基板，从而在基板上形成目标材料层，并在其上退火基板和沉积层。 改进的物理气相沉积真空室包括保持在靶保持器中的靶，保持在衬底保持器中的衬底，等离子体电弧发生器和加热棒。 提供溅射气体供给系统，用于将溅射气体的混合物引入室中; 真空机构包括至少一个用于在沉积期间将室抽空至小于16mTorr的涡轮分子泵。 该方法和装置特别适用于形成薄膜晶体管和其中具有薄膜晶体管的液晶显示器。

    System and method for forming base coat and thin film layers by sequential sputter depositing
    4.
    发明授权
    System and method for forming base coat and thin film layers by sequential sputter depositing 失效
    通过顺序溅射沉积形成底涂层和薄膜层的系统和方法

    公开(公告)号：US06579425B2

    公开(公告)日：2003-06-17

    申请号：US09906881

    申请日：2001-07-16

    申请人： Apostolos Voutsas ,  Yukihiko Nakata

    发明人： Apostolos Voutsas ,  Yukihiko Nakata

    IPC分类号： C23C1435

    CPC分类号： C23C14/568 ,  C23C14/165

    摘要： A system and method are provided to sequentially deposit a silicon dioxide base coat barrier layer adjacent a thin silicon film, to minimize the formation of water and —OH radicals. Both the base coat and thin silicon films are sputter to eliminate hydrogen chemistries. Further, the sputter processes are conducted sequentially, without breaking the vacuum seat to minimize the absorption of water in the base coat layer that conventionally occurs between deposition steps. This process eliminates the total number of process steps required, as there is no longer a need for furnace annealing the base coat before the deposition of the thin silicon film, and no longer a need for a dehydrogenation annealing step after the deposition of the thin silicon film.

    摘要翻译： 提供了一种系统和方法，以顺次沉积邻近薄硅膜的二氧化硅基底涂层阻挡层，以最小化水和-OH自由基的形成。 底涂层和薄硅膜都被溅射以消除氢化学物质。 此外，依次进行溅射处理，而不破坏真空座，以使沉积步骤之间常规发生的底涂层中的水的吸收最小化。 该方法消除了所需的工艺步骤的总数，因为在沉积薄硅膜之前不再需要对底涂层进行炉退火，并且在沉积薄硅之后不再需要脱氢退火步骤 电影。

    Method of forming multi-layers for a thin film transistor
    5.
    发明授权
    Method of forming multi-layers for a thin film transistor 失效
    形成薄膜晶体管多层的方法

    公开(公告)号：US06900083B2

    公开(公告)日：2005-05-31

    申请号：US09945063

    申请日：2001-08-31

    申请人： Apostolos Voutsas ,  Yukihiko Nakata

    发明人： Apostolos Voutsas ,  Yukihiko Nakata

    IPC分类号： G02F1/13 ,  G02F1/1368 ,  H01L21/316 ,  H01L21/336 ,  H01L29/786

    CPC分类号： H01L29/66757 ,  H01L29/78606

    摘要： The present invention concerns a method of forming multi-layers such as base-coat and active layers for TFTs. In accordance with the preferred embodiment of the present invention, a first layer is formed on a transparent substrate using a physical vapor deposition. And a second layer is sequentially formed using a physical vapor deposition on the first layer without breaking vacuum.The present invention simplifies the TFT fabrication while decreasing the water or hydrogen content within multilayers including a base-coat (BC) layer.

    摘要翻译： 本发明涉及形成多层的方法，例如TFT的底涂层和有源层。 根据本发明的优选实施例，使用物理气相沉积在透明基板上形成第一层。 并且使用第一层上的物理气相沉积顺序地形成第二层，而不破坏真空。 本发明简化了TFT制造，同时降低了包括底涂层（BC）层在内的多层中的水或氢含量。

    Method of optimizing channel characteristics using laterally-crystallized ELA poly-Si films
    6.
    发明授权
    Method of optimizing channel characteristics using laterally-crystallized ELA poly-Si films 失效
    使用横向结晶的ELA多晶硅膜优化沟道特性的方法

    公开(公告)号：US06495405B2

    公开(公告)日：2002-12-17

    申请号：US09774296

    申请日：2001-01-29

    申请人： Apostolos Voutsas ,  John W. Hartzell ,  Yukihiko Nakata

    发明人： Apostolos Voutsas ,  John W. Hartzell ,  Yukihiko Nakata

    IPC分类号： H01L2100

    CPC分类号： H01L21/02678 ,  C30B1/023 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/2026

    摘要： A method is provided to optimize the channel characteristics of thin film transistors (TFTs) on polysilicon films. The method is well suited to the production of TFTs for use as drivers on liquid crystal display devices. Regions of polycrystalline silicon can be formed with different predominant crystal orientations. These crystal orientations can be selected to match the desired TFT channel orientations for different areas of the device. The crystal orientations are selected by rotating a mask pattern to a different orientation for each desired crystal orientation. The mask is used in connection with lateral crystallization ELA processes to crystallize deposited amorphous silicon films.

    摘要翻译： 提供了一种优化多晶硅薄膜上的薄膜晶体管（TFT）的沟道特性的方法。 该方法非常适用于制造用作液晶显示装置的驱动器的TFT。 可以形成具有不同主要晶体取向的多晶硅区域。 可以选择这些晶体取向以匹配针对器件的不同区域的期望的TFT沟道取向。 通过将掩模图案旋转到针对每个所需晶体取向的不同取向来选择晶体取向。 该掩模用于结晶沉积的非晶硅膜的横向结晶ELA工艺。