公开(公告)号：US20220283029A1

公开(公告)日：2022-09-08

申请号：US17630235

申请日：2020-07-08

Applicant: Applied Materials, Inc.

Inventor： Zuoming ZHU ,  Martin A. HILKENE ,  Avinash SHERVEGAR ,  Surendra Singh SRIVASTAVA ,  Ala MORADIAN ,  Shu-Kwan LAU ,  Zhiyuan YE ,  Enle CHOO ,  Flora Fong-Song CHANG ,  Bindusugar MARATH SANKARATHODI ,  Patricia M. LIU ,  Errol Antonio C. SANCHEZ ,  Jenny LIN ,  Nyi O. MYO ,  Schubert S. CHU

IPC: G01J3/443 ,  C23C16/455

Abstract: One or more embodiments herein relate to methods for detection using optical emission spectroscopy. In these embodiments, an optical signal is delivered from the process chamber to an optical emission spectrometer (OES). The OES identifies emission peaks of photons, which corresponds to the optical intensity of radiation from the photons, to determine the concentrations of each of the precursor gases and reaction products. The OES sends input signals of the data results to a controller. The controller can adjust process variables within the process chamber in real time during deposition based on the comparison. In other embodiments, the controller can automatically trigger a process chamber clean based on a comparison of input signals of process chamber residues received before the deposition process and input signals of process chamber residues received after the deposition process.

公开(公告)号：US20230154766A1

公开(公告)日：2023-05-18

申请号：US17529684

申请日：2021-11-18

Applicant: Applied Materials, Inc.

Inventor： Songjae LEE ,  Avinash SHERVEGAR ,  Srinivasa RANGAPPA ,  Sundarapandiyan SHANMUGAM ,  Ernesto J. ULLOA ,  Vinodh RAMACHANDRAN ,  Abraham PALATY ,  Jaidev RAJARAM

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67017 ,  H01L21/68707

Abstract: Apparatus for processing a substrate are described herein. More specifically, embodiments described herein relate to separate pre-clean process modules and pre-clean control modules coupled to a cluster tool assembly. Each pre-clean process module and each pre-clean control module are connected by a cable conduit which is configured to have power and control cables passing therethrough between the pre-clean process module and the ore-clean control module. A maintenance passage is formed through the cluster tool assembly. Each of a purge gas source, a process gas source, a manometer, an isolation port, and a throttle valve are all accessible from one side of the pre-clean process module.

公开(公告)号：US20150368796A1

公开(公告)日：2015-12-24

申请号：US14744296

申请日：2015-06-19

Applicant: Applied Materials, Inc.

Inventor： Xuebin LI ,  Kevin JOSEPH BAUTISTA ,  Avinash SHERVEGAR ,  Yihwan KIM ,  Nyi O. MYO ,  Abhishek DUBE

IPC: C23C16/455 ,  F16L41/02

CPC classification number: C23C16/45504 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/4551 ,  C23C16/45563 ,  C30B25/14 ,  C30B35/00

Abstract: Embodiments described herein generally relate to apparatus for forming silicon epitaxial layers on semiconductor devices. Deposition gases and etching gases may be provided sequentially or simultaneously to improve epitaxial layer deposition characteristics. A gas distribution assembly may be coupled to a deposition gas source and an etching gas source. Deposition gas and etching gas may remain separated until the gases are provided to a processing volume in a processing chamber. Outlets of the gas distribution assembly may be configured to provide the deposition gas and etching gas into the processing volume with varying characteristics. In one embodiment, outlets of the gas distribution assembly which deliver etching gas to the processing volume may be angled upward relative to a surface of a substrate.

Abstract translation: 本文描述的实施例一般涉及用于在半导体器件上形成硅外延层的装置。 可以顺序地或同时地提供沉积气体和蚀刻气体以改善外延层沉积特性。 气体分配组件可以耦合到沉积气体源和蚀刻气体源。 沉积气体和蚀刻气体可以保持分离，直到气体被提供到处理室中的处理体积。 气体分配组件的出口可以被配置成将沉积气体和蚀刻气体提供到具有不同特征的处理体积中。 在一个实施例中，将蚀刻气体输送到处理容积的气体分配组件的出口可以相对于衬底的表面向上倾斜。