公开(公告)号：US11348783B2

公开(公告)日：2022-05-31

申请号：US16562002

申请日：2019-09-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Denis Ivanov ,  Lance Scudder ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/02 ,  H05B6/64

Abstract: Methods and apparatus provide plasma generation for semiconductor process chambers. In some embodiments, the plasma is generated by a system that may comprise a process chamber having at least two upper microwave cavities separated from a lower microwave cavity by a metallic plate with a plurality of radiation slots, at least one microwave input port connected to a first one of the at least two upper microwave cavities, at least two microwave input ports connected to a second one of the at least two upper microwave cavities, and the lower microwave cavity receives radiation through the plurality of radiation slots in the metallic plate from both of the at least two upper microwave cavities, the lower microwave cavity is configured to form an electric field that provides uniform plasma distribution in a process volume of the process chamber.

公开(公告)号：US20230213324A1

公开(公告)日：2023-07-06

申请号：US18183138

申请日：2023-03-13

Applicant: Applied Materials, Inc.

Inventor： Hassan G. Iravani ,  Kun Xu ,  Denis Ivanov ,  Shih-Haur Shen ,  Boguslaw A. Swedek

IPC: G01B7/06 ,  B24B49/10

CPC classification number: G01B7/105 ,  B24B49/10

Abstract: An apparatus for chemical mechanical polishing includes a support for a polishing pad having a polishing surface, and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a center post extending from the back portion in a first direction normal to the polishing surface, and an annular rim extending from the back portion in parallel with the center post and surrounding and spaced apart from the center post by a gap. A width of the gap is less than a width of the center post, and a surface area of a top surface of the annular rim is at least two times greater than a surface area of a top surface of the center post.

公开(公告)号：US11524382B2

公开(公告)日：2022-12-13

申请号：US16368649

申请日：2019-03-28

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Denis Ivanov ,  Harry Q. Lee ,  Jun Qian

IPC: H01L21/67 ,  G06N3/063 ,  B24B37/005 ,  B24B49/10 ,  G05B19/048 ,  G06N20/00

Abstract: Data received from an in-situ monitoring system includes, for each scan of a sensor, a plurality of measured signal values for a plurality of different locations on a layer. A thickness of a polishing pad is determined based on the data from the in-situ monitoring system. For each scan, a portion of the measured signal values are adjusted based on the thickness of the polishing pad. For each scan of the plurality of scans and each location of the plurality of different locations, a value is generated representing a thickness of the layer at the location. This includes processing the adjusted signal values using one or more processors configured by machine learning. A polishing endpoint is detected or a polishing parameter is modified based on the values representing the thicknesses at the plurality of different locations.

公开(公告)号：US20210229234A1

公开(公告)日：2021-07-29

申请号：US17232080

申请日：2021-04-15

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Hassan G. Iravani ,  Denis Ivanov ,  Boguslaw A. Swedek ,  Shih-Haur Shen ,  Harry Q. Lee ,  Benjamin Cherian

IPC: B24B37/013 ,  G06N3/08 ,  H01L21/306

Abstract: A method of polishing a layer on the substrate at a polishing station includes the actions of monitoring the layer during polishing at the polishing station with an in-situ monitoring system to generate a plurality of measured signals for a plurality of different locations on the layer; generating, for each location of the plurality of different locations, an estimated measure of thickness of the location, the generating including processing the plurality of measured signals through a neural network; and at least one of detecting a polishing endpoint or modifying a polishing parameter based on each estimated measure of thickness.

公开(公告)号：US20180111251A1

公开(公告)日：2018-04-26

申请号：US15726148

申请日：2017-10-05

Applicant: Applied Materials, Inc.

Inventor： Hassan G. Iravani ,  Kun Xu ,  Denis Ivanov ,  Shih-Haur Shen ,  Boguslaw A. Swedek

IPC: B24B49/04 ,  B24B49/10 ,  H01L21/66 ,  G01N27/02

CPC classification number: B24B49/045 ,  B24B49/105 ,  G01N27/025 ,  H01L22/14 ,  H01L22/26

Abstract: An apparatus for chemical mechanical polishing includes a support for a polishing pad having a polishing surface, and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a center post extending from the back portion in a first direction normal to the polishing surface, and an annular rim extending from the back portion in parallel with the center post and surrounding and spaced apart from the center post by a gap. A width of the gap is less than a width of the center post, and a surface area of a top surface of the annular rim is at least two times greater than a surface area of a top surface of the center post.

公开(公告)号：US11638982B2

公开(公告)日：2023-05-02

申请号：US16533500

申请日：2019-08-06

Applicant: Applied Materials, Inc.

Inventor： Hassan G. Iravani ,  Kun Xu ,  Denis Ivanov ,  Shih-Haur Shen ,  Boguslaw A. Swedek

IPC: G01N27/02 ,  B24B49/04 ,  B24B49/10 ,  H01L21/66

Abstract: An apparatus for chemical mechanical polishing includes a support for a polishing pad having a polishing surface, and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a center post extending from the back portion in a first direction normal to the polishing surface, and an annular rim extending from the back portion in parallel with the center post and surrounding and spaced apart from the center post by a gap. A width of the gap is less than a width of the center post, and a surface area of a top surface of the annular rim is at least two times greater than a surface area of a top surface of the center post.

公开(公告)号：US20230085787A1

公开(公告)日：2023-03-23

申请号：US17993471

申请日：2022-11-23

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Denis Ivanov ,  Harry Q. Lee ,  Jun Qian

IPC: B24B37/005 ,  B24B49/10 ,  G05B19/048 ,  H01L21/67 ,  G06N20/00 ,  G06N3/063

Abstract: Data received from an in-situ monitoring system includes, for each scan of a sensor, a plurality of measured signal values for a plurality of different locations on a layer. A thickness of a polishing pad is determined based on the data from the in-situ monitoring system. For each scan, a portion of the measured signal values are adjusted based on the thickness of the polishing pad. For each scan of the plurality of scans and each location of the plurality of different locations, a value is generated representing a thickness of the layer at the location. This includes processing the adjusted signal values using one or more processors configured by machine learning. A polishing endpoint is detected or a polishing parameter is modified based on the values representing the thicknesses at the plurality of different locations.

公开(公告)号：US20210074539A1

公开(公告)日：2021-03-11

申请号：US16562002

申请日：2019-09-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Denis Ivanov ,  Lance Scudder ,  Dmitry Lubomirsky

IPC: H01L21/02 ,  H01J37/32

Abstract: Methods and apparatus provide plasma generation for semiconductor process chambers. In some embodiments, the plasma is generated by a system that may comprise a process chamber having at least two upper microwave cavities separated from a lower microwave cavity by a metallic plate with a plurality of radiation slots, at least one microwave input port connected to a first one of the at least two upper microwave cavities, at least two microwave input ports connected to a second one of the at least two upper microwave cavities, and the lower microwave cavity receives radiation through the plurality of radiation slots in the metallic plate from both of the at least two upper microwave cavities, the lower microwave cavity is configured to form an electric field that provides uniform plasma distribution in a process volume of the process chamber.

公开(公告)号：US12103135B2

公开(公告)日：2024-10-01

申请号：US18183138

申请日：2023-03-13

Applicant: Applied Materials, Inc.

Inventor： Hassan G. Iravani ,  Kun Xu ,  Denis Ivanov ,  Shih-Haur Shen ,  Boguslaw A. Swedek

IPC: G01N27/02 ,  B24B49/04 ,  B24B49/10 ,  G01B7/06 ,  H01L21/66

CPC classification number: B24B49/045 ,  B24B49/10 ,  B24B49/105 ,  G01B7/105 ,  G01N27/025 ,  H01L22/14 ,  H01L22/26

Abstract: An apparatus for chemical mechanical polishing includes a support for a polishing pad having a polishing surface, and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a center post extending from the back portion in a first direction normal to the polishing surface, and an annular rim extending from the back portion in parallel with the center post and surrounding and spaced apart from the center post by a gap. A width of the gap is less than a width of the center post, and a surface area of a top surface of the annular rim is at least two times greater than a surface area of a top surface of the center post.

公开(公告)号：US10994389B2

公开(公告)日：2021-05-04

申请号：US15953203

申请日：2018-04-13

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Hassan G. Iravani ,  Denis Ivanov ,  Boguslaw A. Swedek ,  Shih-Haur Shen ,  Harry Q. Lee ,  Benjamin Cherian

IPC: B24B37/013 ,  H01L21/306 ,  H01L21/66 ,  G06N3/08 ,  G06N3/04

Abstract: A method of polishing a layer on the substrate at a polishing station includes the actions of monitoring the layer during polishing at the polishing station with an in-situ monitoring system to generate a plurality of measured signals for a plurality of different locations on the layer; generating, for each location of the plurality of different locations, an estimated measure of thickness of the location, the generating including processing the plurality of measured signals through a neural network; and at least one of detecting a polishing endpoint or modifying a polishing parameter based on each estimated measure of thickness.