公开(公告)号：US20230116437A1

公开(公告)日：2023-04-13

申请号：US18080884

申请日：2022-12-14

申请人： Applied Materials, Inc.

发明人： Laksheswar Kalita ,  Son Nguyen ,  Dmitry Lubomirsky ,  Kenneth D. Schatz

IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/3065

摘要： Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp2 to sp3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.

公开(公告)号：US11476093B2

公开(公告)日：2022-10-18

申请号：US16704387

申请日：2019-12-05

申请人： Applied Materials, Inc.

发明人： Toan Q. Tran ,  Soonam Park ,  Zilu Weng ,  Dmitry Lubomirsky

IPC分类号： H01J37/32

摘要： An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and faces the gas distribution device such that the first plasma products pass through the plurality of fourth apertures. The workpiece chuck faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the workpiece chuck. The fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device.

公开(公告)号：US11361939B2

公开(公告)日：2022-06-14

申请号：US16448305

申请日：2019-06-21

申请人： Applied Materials, Inc.

发明人： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC分类号： H01J37/32 ,  C23C16/455

摘要： Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

公开(公告)号：US11302520B2

公开(公告)日：2022-04-12

申请号：US14747367

申请日：2015-06-23

申请人： Applied Materials, Inc.

发明人： Tien Fak Tan ,  Dmitry Lubomirsky ,  Kirby H. Floyd ,  Son T. Nguyen ,  David Palagashvili ,  Alexander Tam ,  Shaofeng Chen

IPC分类号： H01J37/32

摘要： Implementations of the disclosure generally provide an improved pedestal heater for a processing chamber. The pedestal heater includes a temperature-controlled plate having a first surface and a second surface opposing the first surface. The temperature-controlled plate includes an inner zone comprising a first set of heating elements, an outer zone comprising a second set of heating elements, the outer zone surrounding the inner zone, and a continuous thermal choke disposed between the inner zone and the outer zone, and a substrate receiving plate having a first surface and a second surface opposing the first surface, the second surface of the substrate receiving plate is coupled to the first surface of the temperature-controlled plate. The continuous thermal choke enables a very small temperature gradient to be created and manipulated between the inner zone and the outer zone, allowing center-fast or edge-fast etching profile to achieve on a surface of the substrate.

公开(公告)号：US11279661B2

公开(公告)日：2022-03-22

申请号：US16378344

申请日：2019-04-08

申请人： Applied Materials, Inc.

发明人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Biraja P. Kanungo ,  Dmitry Lubomirsky

IPC分类号： C04B41/87 ,  C04B41/52 ,  C04B41/00 ,  C04B41/50 ,  C04B41/80 ,  C04B41/89

摘要： A heat treated ceramic article includes a ceramic substrate and a ceramic coating on the ceramic substrate. The ceramic coating is a non-sintered ceramic coating that has a different composition than the ceramic substrate. The heat treated ceramic article further includes a transition layer between the ceramic substrate and the ceramic coating, the transition layer comprising first elements from the ceramic coating that have reacted with second elements from the ceramic substrate, wherein the transition layer has a thickness of about 0.1 microns to about 5 microns.

公开(公告)号：US11276559B2

公开(公告)日：2022-03-15

申请号：US15597973

申请日：2017-05-17

申请人： Applied Materials, Inc.

发明人： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC分类号： H01J37/32

摘要： Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

公开(公告)号：US11195699B2

公开(公告)日：2021-12-07

申请号：US16459362

申请日：2019-07-01

申请人： Applied Materials, Inc.

发明人： Satoru Kobayashi ,  Hideo Sugai ,  Toan Tran ,  Soonam Park ,  Dmitry Lubomirsky

IPC分类号： H01J37/32

摘要： A rotating microwave is established for any resonant mode TEmnl or TMmnl of a cavity, where the user is free to choose the values of the mode indices m, n and l. The fast rotation, the rotation frequency of which is equal to an operational microwave frequency, is accomplished by setting the temporal phase difference ΔØ and the azimuthal angle Δθ between two microwave input ports P and Q as functions of m, n and l. The slow rotation of frequency Ωa (typically 1-1000 Hz), is established by transforming dual field inputs α cos Ωat and ±α sin Ωat in the orthogonal input system into an oblique system defined by the angle Δθ between two microwave ports P and Q.

公开(公告)号：US20210189564A1

公开(公告)日：2021-06-24

申请号：US17176411

申请日：2021-02-16

申请人： Applied Materials, Inc.

发明人： Laksheswar Kalita ,  Soonam Park ,  Dmitry Lubomirsky ,  Tien Fak Tan ,  LokKee Loh ,  Saravjeet Singh ,  Tae Won Kim

IPC分类号： C23C16/455 ,  C23C16/34 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/285 ,  C23C16/458

摘要： Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

公开(公告)号：US20200273728A1

公开(公告)日：2020-08-27

申请号：US16834109

申请日：2020-03-30

申请人： Applied Materials, Inc.

发明人： David Benjaminson ,  Dmitry Lubomirsky ,  Ananda Seelavanth Math ,  Saravanakumar Natarajan ,  Shubham Chourey

IPC分类号： H01L21/67 ,  H01L21/687 ,  H01L21/324 ,  H01J37/32

摘要： A workpiece holder includes a puck, first and second heating devices in thermal communication with respective inner and outer portions of the puck, and a thermal sink in thermal communication with the puck. The first and second heating devices are independently controllable, and the first and second heating devices are in greater thermal communication with the puck, than thermal communication of the thermal sink with the puck. A method of controlling temperature distribution of a workpiece includes flowing a heat exchange fluid through a thermal sink to establish a reference temperature to a puck, raising temperatures of radially inner and outer portions of the puck to first and second temperatures greater than the reference temperature, by activating respective first and second heating devices disposed in thermal communication with the radially inner and outer portions of the puck, and placing the workpiece on the puck.

公开(公告)号：US10699879B2

公开(公告)日：2020-06-30

申请号：US15955588

申请日：2018-04-17

申请人： Applied Materials, Inc.

发明人： Tien Fak Tan ,  Saravjeet Singh ,  Dmitry Lubomirsky ,  Tae Wan Kim ,  Kenneth D. Schatz ,  Tae Seung Cho ,  Lok Kee Loh

IPC分类号： H01J37/32 ,  H01J37/04

摘要： An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes, and the gap distance is between 0.005 inch and 0.050 inch.