Methods and apparatus for dynamical control of radial uniformity with two-story microwave cavities

    公开(公告)号:US11348783B2

    公开(公告)日:2022-05-31

    申请号:US16562002

    申请日:2019-09-05

    Abstract: Methods and apparatus provide plasma generation for semiconductor process chambers. In some embodiments, the plasma is generated by a system that may comprise a process chamber having at least two upper microwave cavities separated from a lower microwave cavity by a metallic plate with a plurality of radiation slots, at least one microwave input port connected to a first one of the at least two upper microwave cavities, at least two microwave input ports connected to a second one of the at least two upper microwave cavities, and the lower microwave cavity receives radiation through the plurality of radiation slots in the metallic plate from both of the at least two upper microwave cavities, the lower microwave cavity is configured to form an electric field that provides uniform plasma distribution in a process volume of the process chamber.

    CORE CONFIGURATION FOR IN-SITU ELECTROMAGNETIC INDUCTION MONITORING SYSTEM

    公开(公告)号:US20230213324A1

    公开(公告)日:2023-07-06

    申请号:US18183138

    申请日:2023-03-13

    CPC classification number: G01B7/105 B24B49/10

    Abstract: An apparatus for chemical mechanical polishing includes a support for a polishing pad having a polishing surface, and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a center post extending from the back portion in a first direction normal to the polishing surface, and an annular rim extending from the back portion in parallel with the center post and surrounding and spaced apart from the center post by a gap. A width of the gap is less than a width of the center post, and a surface area of a top surface of the annular rim is at least two times greater than a surface area of a top surface of the center post.

    Polishing apparatus using machine learning and compensation for pad thickness

    公开(公告)号:US11524382B2

    公开(公告)日:2022-12-13

    申请号:US16368649

    申请日:2019-03-28

    Abstract: Data received from an in-situ monitoring system includes, for each scan of a sensor, a plurality of measured signal values for a plurality of different locations on a layer. A thickness of a polishing pad is determined based on the data from the in-situ monitoring system. For each scan, a portion of the measured signal values are adjusted based on the thickness of the polishing pad. For each scan of the plurality of scans and each location of the plurality of different locations, a value is generated representing a thickness of the layer at the location. This includes processing the adjusted signal values using one or more processors configured by machine learning. A polishing endpoint is detected or a polishing parameter is modified based on the values representing the thicknesses at the plurality of different locations.

    Core configuration for in-situ electromagnetic induction monitoring system

    公开(公告)号:US11638982B2

    公开(公告)日:2023-05-02

    申请号:US16533500

    申请日:2019-08-06

    Abstract: An apparatus for chemical mechanical polishing includes a support for a polishing pad having a polishing surface, and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a center post extending from the back portion in a first direction normal to the polishing surface, and an annular rim extending from the back portion in parallel with the center post and surrounding and spaced apart from the center post by a gap. A width of the gap is less than a width of the center post, and a surface area of a top surface of the annular rim is at least two times greater than a surface area of a top surface of the center post.

    POLISHING APPARATUS USING MACHINE LEARNING AND COMPENSATION FOR PAD THICKNESS

    公开(公告)号:US20230085787A1

    公开(公告)日:2023-03-23

    申请号:US17993471

    申请日:2022-11-23

    Abstract: Data received from an in-situ monitoring system includes, for each scan of a sensor, a plurality of measured signal values for a plurality of different locations on a layer. A thickness of a polishing pad is determined based on the data from the in-situ monitoring system. For each scan, a portion of the measured signal values are adjusted based on the thickness of the polishing pad. For each scan of the plurality of scans and each location of the plurality of different locations, a value is generated representing a thickness of the layer at the location. This includes processing the adjusted signal values using one or more processors configured by machine learning. A polishing endpoint is detected or a polishing parameter is modified based on the values representing the thicknesses at the plurality of different locations.

    METHODS AND APPARATUS FOR DYNAMICAL CONTROL OF RADIAL UNIFORMITY WITH TWO-STORY MICROWAVE CAVITIES

    公开(公告)号:US20210074539A1

    公开(公告)日:2021-03-11

    申请号:US16562002

    申请日:2019-09-05

    Abstract: Methods and apparatus provide plasma generation for semiconductor process chambers. In some embodiments, the plasma is generated by a system that may comprise a process chamber having at least two upper microwave cavities separated from a lower microwave cavity by a metallic plate with a plurality of radiation slots, at least one microwave input port connected to a first one of the at least two upper microwave cavities, at least two microwave input ports connected to a second one of the at least two upper microwave cavities, and the lower microwave cavity receives radiation through the plurality of radiation slots in the metallic plate from both of the at least two upper microwave cavities, the lower microwave cavity is configured to form an electric field that provides uniform plasma distribution in a process volume of the process chamber.

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