公开(公告)号：US20250028242A1

公开(公告)日：2025-01-23

申请号：US18908553

申请日：2024-10-07

Applicant: Applied Materials, Inc.

Inventor： TZU SHUN YANG ,  ZHENXING HAN ,  MADHUR SACHAN ,  LEQUN LIU ,  NASRIN KAZEM ,  LAKMAL CHARIDU KALUTARAGE ,  MARK JOSEPH SALY

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/16 ,  G03F7/36 ,  H01L21/027

Abstract: Embodiments disclosed herein may include a method for developing a photopatterned metal oxo photoresist. In an embodiment, the method may include pre-treating the photopatterned metal oxo photoresist with a pre-treatment process, developing the photopatterned metal oxo photoresist with a thermal dry develop process to selectively remove a portion of the photopatterned metal oxo photoresist and form a resist mask. In an embodiment, the thermal dry develop process includes a first sub-operation, and a second sub-operation that is different than the first sub-operation. In an embodiment, the process further includes post-treating the resist mask with a post-treatment process.

公开(公告)号：US20240272552A1

公开(公告)日：2024-08-15

申请号：US18407776

申请日：2024-01-09

Applicant: Applied Materials, Inc.

Inventor： GABRIELA ALVA ,  ZHENXING HAN ,  MADHUR SACHAN ,  CHI-I LANG ,  LIN ZHOU ,  LEQUN LIU ,  NASRIN KAZEM

IPC: G03F7/039 ,  G03F7/00 ,  G03F7/11 ,  G03F7/20

CPC classification number: G03F7/0392 ,  G03F7/11 ,  G03F7/2026 ,  G03F7/70033

Abstract: Embodiments disclosed herein include a method of patterning a substrate. In an embodiment, the method comprises, disposing a photoresist layer over a substrate, and exposing the photoresist layer to form an exposed region and an unexposed region in the photoresist layer. In an embodiment, the method further comprises treating either the exposed region or the unexposed region with a sequential infiltration synthesis (SIS) process to form a treated region, and developing the photoresist layer to remove portions of the photoresist layer other than the treated region.