公开(公告)号：US20230360890A1

公开(公告)日：2023-11-09

申请号：US18131997

申请日：2023-04-07

Applicant: Applied Materials, Inc.

Inventor： Yue CHEN ,  Jinyu LU ,  Yongmei CHEN ,  Jinxin FU ,  Zihao YANG ,  Mingwei ZHU ,  Takashi KURATOMI ,  Rami HOURANI ,  Ludovic GODET ,  Qun JING ,  Jingyi YANG ,  David Masayuki ISHIKAWA

IPC: H01J37/32 ,  H01J7/02

CPC classification number: H01J37/32449 ,  H01J37/32458 ,  H01J37/32724 ,  H01J7/02 ,  H01J2237/332 ,  H01J2237/334

Abstract: A method of processing an optical device is provided, including: positioning an optical device on a substrate support in an interior volume of a process chamber, the optical device including an optical device substrate and a plurality of optical device structures formed over the optical device substrate, each optical device structure including a bulk region formed of silicon carbide and one or more surface regions formed of silicon oxycarbide. The method further includes providing one or more process gases to the interior volume of the process chamber, and generating a plasma of the one or more process gases in the interior volume for a first time period when the optical device is on the substrate support, and stopping the plasma after the first time period. A carbon content of the one or more surface regions of each optical device structure is reduced by at least 50% by the plasma.

公开(公告)号：US20200227258A1

公开(公告)日：2020-07-16

申请号：US16597466

申请日：2019-10-09

Applicant: Applied Materials, Inc.

Inventor： Zhijun JIANG ,  Ganesh BALASUBRAMANIAN ,  Arkajit ROY BARMAN ,  Hidehiro KOJIRI ,  Xinhai HAN ,  Deenesh PADHI ,  Chuan Ying WANG ,  Yue CHEN ,  Daemian Raj BENJAMIN RAJ ,  Nikhil Sudhindrarao JORAPUR ,  Vu Ngoc Tran NGUYEN ,  Miguel S. FUNG ,  Jose Angelo OLAVE ,  Thian Choi LIM

IPC: H01L21/02 ,  H01L21/67

Abstract: A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.