公开(公告)号：US20240160100A1

公开(公告)日：2024-05-16

申请号：US18222897

申请日：2023-07-17

Applicant: Applied Materials, Inc.

Inventor： Tzu Shun Yang ,  Zhenxing Han ,  Madhur Sachan ,  Lequn Liu ,  Nasrin Kazem ,  Lakmal Charidu Kalutarage ,  Mark Joseph Saly

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/16 ,  G03F7/36 ,  H01L21/027

CPC classification number: G03F7/0042 ,  G03F7/167 ,  G03F7/36 ,  G03F7/70033 ,  H01L21/0274

Abstract: Embodiments disclosed herein may include a method for developing a photopatterned metal oxo photoresist. In an embodiment, the method may include pre-treating the photopatterned metal oxo photoresist with a pre-treatment process, developing the photopatterned metal oxo photoresist with a thermal dry develop process to selectively remove a portion of the photopatterned metal oxo photoresist and form a resist mask. In an embodiment, the thermal dry develop process includes a first sub-operation, and a second sub-operation that is different than the first sub-operation. In an embodiment, the process further includes post-treating the resist mask with a post-treatment process.

公开(公告)号：US20240427308A1

公开(公告)日：2024-12-26

申请号：US18213790

申请日：2023-06-23

Applicant: Applied Materials, Inc.

Inventor： Rituraj Nandan ,  Ramachandran Subramanian ,  Brett Robert Schroeder ,  Pardeep Kumar ,  Zhenxing Han ,  Martha Inez Sanchez ,  Bharath Ram Sundar ,  Madhur Singh Sachan ,  Sundar Narayanan

IPC: G05B19/4099

Abstract: A method includes receiving data indicative of a range of processing conditions associated with a plurality of substrate processing operations. The data indicative of the range of processing conditions includes a first range of values of a first property and a second range of values of a second property of the processing conditions. The method further includes receiving data indicative of processing performance associated with the plurality of processed substrates. The data includes a first set of data associated with a first indication of substrate performance and a second set of data associated with a second indication of substrate performance. The method further includes performing analysis relating the processing conditions to the processing performance. The method further includes generating a visualization presenting results of the analysis including representations of the first indication of substrate performance and the second indication of substrate performance.

公开(公告)号：US20220342302A1

公开(公告)日：2022-10-27

申请号：US17862283

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Zhenxing Han ,  Luisa Bozano ,  Madhur Sachan

IPC: G03F7/004 ,  H01L21/308 ,  G03F7/40 ,  G03F7/16

Abstract: Embodiments disclosed herein include a method of patterning a metal oxo photoresist. In an embodiment, the method comprises depositing the metal oxo photoresist on a substrate, treating the metal oxo photoresist with a first treatment, exposing the metal oxo photoresist with an EUV exposure to form exposed regions and unexposed regions, treating the exposed metal oxo photoresist with a second treatment, and developing the metal oxo photoresist.