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    Method of Forming Capacitors
    5.
    发明申请
    Method of Forming Capacitors 有权
    形成电容器的方法

    公开(公告)号：US20100025362A1

    公开(公告)日：2010-02-04

    申请号：US12575263

    申请日：2009-10-07

    申请人： Kevin Shea ,  Brett Busch ,  Farrell Good ,  Irina Vasilyeva ,  Vishwanath Bhat

    发明人： Kevin Shea ,  Brett Busch ,  Farrell Good ,  Irina Vasilyeva ,  Vishwanath Bhat

    IPC分类号： C23F1/00 ,  B32B37/00 ,  H01L21/02

    CPC分类号： H01L27/10852 ,  H01L27/10894 ,  H01L28/91 ,  Y10T156/10

    摘要： A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.

    摘要翻译： 形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。 在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。 屏蔽包括氮化物。 通过包含氮化物的护罩在开口内进行蚀刻。 在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。 与第一电容器电极可操作地形成电容器电介质和第二电容器电极。 考虑了其他方面和实现。

    Methods of forming a plurality of capacitors
    6.
    发明申请
    Methods of forming a plurality of capacitors 有权

    公开(公告)号：US20060051918A1

    公开(公告)日：2006-03-09

    申请号：US10928931

    申请日：2004-08-27

    申请人： Brett Busch ,  Fred Fishburn ,  James Rominger

    发明人： Brett Busch ,  Fred Fishburn ,  James Rominger

    IPC分类号： H01L21/8242

    CPC分类号： H01L28/91 ,  H01L27/0207 ,  H01L27/10852

    摘要： A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor electrode-forming material than is a second set of the openings. Conductive first capacitor electrode material is formed therein. A sacrificial retaining structure is formed elevationally over both the first capacitor electrode material and the capacitor electrode-forming material, leaving some of the capacitor electrode-forming material exposed. With the retaining structure in place, at least some of the capacitor electrode-forming material is etched from the substrate effective to expose outer sidewall surfaces of the first capacitor electrode material. Then, the sacrificial retaining structure is removed from the substrate, and then capacitor dielectric material and conductive second capacitor electrode material are formed over the outer sidewall surfaces of the first capacitor electrode material formed within the first and second sets of capacitor openings.

    Method of forming capacitors
    7.
    发明授权
    Method of forming capacitors 有权
    形成电容器的方法

    公开(公告)号：US08318578B2

    公开(公告)日：2012-11-27

    申请号：US12575263

    申请日：2009-10-07

    申请人： Kevin Shea ,  Brett Busch ,  Farrell Good ,  Irina Vasilyeva ,  Vishwanath Bhat

    发明人： Kevin Shea ,  Brett Busch ,  Farrell Good ,  Irina Vasilyeva ,  Vishwanath Bhat

    IPC分类号： H01L21/20

    CPC分类号： H01L27/10852 ,  H01L27/10894 ,  H01L28/91 ,  Y10T156/10

    摘要： A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.

    摘要翻译： 形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。 在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。 屏蔽包括氮化物。 通过包含氮化物的护罩在开口内进行蚀刻。 在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。 与第一电容器电极可操作地形成电容器电介质和第二电容器电极。 考虑了其他方面和实现。

    SEMICONDUCTOR DEVICES AND STRUCTURES INCLUDING AT LEAST PARTIALLY FORMED CONTAINER CAPACITORS
    8.
    发明申请
    SEMICONDUCTOR DEVICES AND STRUCTURES INCLUDING AT LEAST PARTIALLY FORMED CONTAINER CAPACITORS 有权
    半导体器件和结构，包括至少部分形成的容器电容器

    公开(公告)号：US20120043596A1

    公开(公告)日：2012-02-23

    申请号：US13286702

    申请日：2011-11-01

    申请人： Brett Busch ,  Kevin R. Shea ,  Thomas A. Figura

    发明人： Brett Busch ,  Kevin R. Shea ,  Thomas A. Figura

    IPC分类号： H01L27/108 ,  H01L29/02

    CPC分类号： H01L27/10852 ,  H01L28/90

    摘要： Semiconductor device structures include an at least partially formed container capacitor having a generally cylindrical first conductive member with at least one inner sidewall surface, a lattice material at least partially laterally surrounding an upper end portion of the first conductive member, an anchor material, and at least one aperture extending through the lattice material between the at least partially formed container capacitor and an adjacent at least partially formed container capacitor. Other structures include an at least partially formed container capacitor, a lattice material, and an anchor material disposed over a surface of the lattice material and at least a portion of an end surface of the first conductive member and forming a chemical barrier over at least a portion of an interface between the lattice material and the upper end portion of the first conductive member.

    摘要翻译： 半导体器件结构包括至少部分形成的容器电容器，其具有大致圆柱形的第一导电构件，其具有至少一个内侧壁表面，格栅材料至少部分横向围绕第一导电构件的上端部分，锚固材料和 在所述至少部分形成的容器电容器和相邻的至少部分形成的容器电容器之间延伸穿过所述晶格材料的至少一个孔。 其他结构包括至少部分形成的容器电容器，格子材料和布置在晶格材料的表面上的锚定材料和第一导电构件的端表面的至少一部分，并且在至少一个 晶格材料和第一导电构件的上端部分之间的界面的一部分。

    SEMICONDUCTOR DEVICES AND STRUCTURES INCLUDING AT LEAST PARTIALLY FORMED CONTAINER CAPACITORS AND METHODS OF FORMING THE SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICES AND STRUCTURES INCLUDING AT LEAST PARTIALLY FORMED CONTAINER CAPACITORS AND METHODS OF FORMING THE SAME 有权
    半导体器件和结构，包括至少部分形成的容器电容器及其形成方法

    公开(公告)号：US20100193853A1

    公开(公告)日：2010-08-05

    申请号：US12365519

    申请日：2009-02-04

    申请人： Brett Busch ,  Kevin R. Shea ,  Thomas A. Figura

    发明人： Brett Busch ,  Kevin R. Shea ,  Thomas A. Figura

    IPC分类号： H01L27/10 ,  H01L21/8242 ,  H01L29/92

    CPC分类号： H01L27/10852 ,  H01L28/90

    摘要： Methods of forming semiconductor devices that include one or more container capacitors include anchoring an end of a conductive member to a surrounding lattice material using an anchor material, which may be a dielectric. The anchor material may extend over at least a portion of an end surface of the conductive member, at least a portion of the lattice material, and an interface between the conductive member and the lattice material. In some embodiments, the anchor material may be formed without significantly covering an inner sidewall surface of the conductive member. Furthermore, in some embodiments, a barrier material may be provided over at least a portion of the anchor material and over at least a portion of an inner sidewall surface of the conductive member. Novel semiconductor devices and structures are fabricated using such methods.

    摘要翻译： 形成包括一个或多个容器电容器的半导体器件的方法包括使用锚定材料（其可以是电介质）将导电构件的端部锚定到周围的栅格材料。 锚固材料可以在导电构件的端表面的至少一部分，晶格材料的至少一部分以及导电构件和晶格材料之间的界面上延伸。 在一些实施例中，可以形成锚固材料而不显着地覆盖导电构件的内侧壁表面。 此外，在一些实施例中，阻挡材料可以设置在锚定材料的至少一部分上并且在导电构件的内侧壁表面的至少一部分上方。 使用这种方法制造新的半导体器件和结构。

    Memory cell support lattice
    10.
    发明授权
    Memory cell support lattice 有权
    存储单元支持格

    公开(公告)号：US09184167B2

    公开(公告)日：2015-11-10

    申请号：US13590791

    申请日：2012-08-21

    申请人： Zhimin Song ,  Che-Chi Lee ,  Brett Busch

    发明人： Zhimin Song ,  Che-Chi Lee ,  Brett Busch

    IPC分类号： H01L27/108 ,  H01L21/8242 ,  H01L49/02

    CPC分类号： H01L27/10852 ,  H01L21/02266 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/10814 ,  H01L27/10817 ,  H01L28/91

    摘要： Memory cell support lattices and methods of forming the same are described herein. As an example, a method of forming a memory cell support lattice includes forming a mask on a number of capacitor elements in an array, such that a space between vertically and horizontally adjacent capacitor elements is fully covered and a space between diagonally adjacent capacitor elements is partially covered and forming a support lattice in a support material by etching the support material to remove portions of the support material below the openings in the mask.

    摘要翻译： 本文描述了记忆单元支撑晶格及其形成方法。 作为示例，形成存储单元支撑晶格的方法包括在阵列中的多个电容器元件上形成掩模，使得垂直和水平相邻的电容器元件之间的空间被完全覆盖，并且对角相邻的电容器元件之间的空间是 部分地覆盖并通过蚀刻支撑材料在支撑材料中形成支撑格架，以将掩模中开口下方的支撑材料的部分去除。