摘要:
A semiconductor device in which a first chip and a second chip are stacked including a first wiring line and a second wiring line by which the first chip and the second chip are electrically connected. The first wiring line and the second wiring line each include a bonding portion for bonding one of a plurality of conductive patterns placed in the first chip and one of a plurality of conductive patterns placed in the second chip. The number of bonding portions included in the first wiring line is larger than the number of bonding portions included in the second wiring line.
摘要:
Provided is an analog-to-digital (AD) conversion device including: a comparator configured to compare an input analog signal and a reference signal; a plurality of first bit-memories configured to hold a digital signal including a plurality of bits generated based on a result of comparison performed by the comparator, each of the plurality of first bit-memories holding a bit signal of a corresponding one bit among the plurality of bits of the digital signal; an output circuit to which the bit signal output from each of the plurality of first bit-memories is commonly input; a transmission line configured to transmit the bit signal output from the output circuit; and a first scanning circuit configured to sequentially select, from the plurality of first bit-memories, a first bit-memory that outputs the bit signal to the output circuit.
摘要:
Pixels output a first signal based on signal charge of a part of photoelectric conversion units of multiple photoelectric conversion units, and a second signal based on signal charge of multiple photoelectric conversion units. An imaging apparatus outputs signals based on the first signals and signals based on the second signals by reducing the number of signals based on the first signals as compared to the number of signals based on the second signals.
摘要:
A first ramp signal having a potential which is changed with time in a first amplitude range in a first period and a second ramp signal in which a potential is changed with time in a second amplitude range which includes the first amplitude range and which has maximum amplitude larger than maximum amplitude of the first amplitude range and an amount of the change of the potential per unit time is the same as an amount of the change of the potential per unit time of the first ramp signal are generated, and comparison between an optical signal and the first ramp signal and comparison between the optical signal and the second ramp signal are performed in parallel.
摘要:
Pixels output a first signal based on signal charge of a part of photoelectric conversion units of multiple photoelectric conversion units, and a second signal based on signal charge of multiple photoelectric conversion units. An imaging apparatus outputs signals based on the first signals and signals based on the second signals by reducing the number of signals based on the first signals as compared to the number of signals based on the second signals.
摘要:
Pixels output a first signal based on signal charge of a part of photoelectric conversion units of multiple photoelectric conversion units, and a second signal based on signal charge of multiple photoelectric conversion units. An imaging apparatus outputs signals based on the first signals and signals based on the second signals by reducing the number of signals based on the first signals as compared to the number of signals based on the second signals.
摘要:
A solid-state imaging apparatus, including a plurality of pixels, and an A/D conversion unit configured to convert a pixel signal of an analog signal into a digital signal, wherein the A/D conversion unit comprises a comparator, a sampling unit, a counter, and an output unit configured to output the digital signal based on a count result of the counter and a sampling result of the sampling unit, and the sampling unit comprises first and second latch units configured to latch an output from the comparator in response to first and second clock signals, respectively, and a third latch unit configured to latch an output from the first latch unit in response to an output of the second latch unit.
摘要:
A solid-state image sensor including a wiring portion which includes a first line, a second line and a control line, in first to third regions arranged sequentially, wherein the first line includes a first pattern in a first layer in the first and second regions and a second pattern in a second layer in the third region, and these patterns are connected each other between the second region and the third region, the second line includes a third pattern in the second layer in the first region and a fourth pattern in the first layer in the second and third regions, the these patterns are connected each other between the first region and the second region, and the control line includes a pattern in the second layer in the second region, intersecting with the first pattern and the fourth pattern.
摘要:
Pixels output a first signal based on signal charge of a part of photoelectric conversion units of multiple photoelectric conversion units, and a second signal based on signal charge of multiple photoelectric conversion units. An imaging apparatus outputs signals based on the first signals and signals based on the second signals by reducing the number of signals based on the first signals as compared to the number of signals based on the second signals.
摘要:
A photoelectric conversion device includes a plurality of pixels and a readout circuit. Each of the plurality of pixels includes a pixel circuit including a photoelectric conversion unit. The readout circuit is configured for reading out a signal from the plurality of pixels. The pixel circuit of each of the plurality of pixels includes at least a first transistor that receives a signal based on signal charges generated by the photoelectric conversion unit and is a part of a differential pair. The pixel circuit or the readout circuit has a second transistor. The size of the first transistor and the size of the second transistor are different from each other.