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    Stress control during processing of a MEMS digital variable capacitor (DVC)
    7.
    发明授权
    Stress control during processing of a MEMS digital variable capacitor (DVC) 有权

    公开(公告)号：US09754724B2

    公开(公告)日：2017-09-05

    申请号：US14898678

    申请日：2014-06-04

    Applicant: CAVENDISH KINETICS, INC.

    Inventor： Robertus Petrus Van Kampen ,  Richard L. Knipe

    IPC: H01L49/02 ,  H01G5/16 ,  H01G5/18

    CPC classification number: H01G5/16 ,  H01G5/18 ,  H01L28/60

    Abstract: The present invention generally relates to a MEMS digital variable capacitor (DVC) (900) and a method for manufacture thereof. The movable plate (938) within a MEMS DVC should have the same stress level to ensure proper operation of the MEMS DVC. To obtain the same stress level, the movable plate is decoupled from CMOS ground during fabrication. The movable plate is only electrically coupled to CMOS ground after the plate has been completely formed. The coupling occurs by using the same layer (948) that forms the pull-up electrode as the layer that electrically couples the movable plate to CMOS ground. As the same layer couples the movable plate to CMOS ground and also provides the pull-up electrode for the MEMS DVC, the deposition occurs in the same processing step. By electrically coupling the movable plate to CMOS ground after formation, the stress in each of the layers of the movable plate can be substantially identical.

    VARIABLE CAPACITOR COMPROMISING MEMS DEVICES FOR RADIO FREQUENCY APPLICATIONS
    9.
    发明申请
    VARIABLE CAPACITOR COMPROMISING MEMS DEVICES FOR RADIO FREQUENCY APPLICATIONS 有权
    可变电容器用于无线电频率应用的MEMS器件

    公开(公告)号：US20150235771A1

    公开(公告)日：2015-08-20

    申请号：US14420152

    申请日：2013-08-07

    Applicant: CAVENDISH KINETICS, INC.

    Inventor： Robertus Petrus Van Kampen ,  Richard L. Knipe

    IPC: H01G5/16 ,  H01G5/38

    CPC classification number: H01G5/16 ,  H01G5/18 ,  H01G5/38 ,  H01L27/01 ,  H01L27/0207 ,  H01L27/0805 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/0001

    Abstract: A variable capacitor (300) comprises cells (200, 400) that have an RF electrode (202, 402) coupled to a bond pad (30). Each cell comprises a plurality of MEMS devices (100) the capacitance of which can be changed by means of a movable electrode. The MEMS devices are placed in a sealed cavity of the cell and are arranged next to each other along the length of the RF electrode of the cell. The RF electrode of each cell can be trimmed so as to obtain an RF line (402) and a further ground electrode (404) and so as to scale the RF capacitance of the cell without impacting the mechanical performance of the MEMS cells. Each cell has the same control capacitance irrespective of the RF capacitance. This allows each cell to use the same isolation resistor required for RF operation and thus each cell has the same parasitic capacitance. This allows the CMOS control circuit to be optimized and the dynamic performance of the cells to be matched.

    Abstract translation: 可变电容器（300）包括具有耦合到接合焊盘（30）的RF电极（202,402）的电池（200,400）。 每个单元包括多个MEMS器件（100），其电容可以通过可移动电极来改变。 MEMS器件被放置在电池的密封空腔中并且沿着电池的RF电极的长度彼此相邻地布置。 可以对每个单元的RF电极进行修整，以获得RF线（402）和另外的接地电极（404），以便在不影响MEMS单元的机械性能的情况下缩放电池的RF电容。 每个单元都具有与RF电容无关的相同的控制电容。 这允许每个单元使用RF操作所需的相同的隔离电阻，因此每个单元具有相同的寄生电容。 这允许CMOS控制电路被优化并且电池的动态性能匹配。

    MEMS RF-switch with near-zero impact landing
    10.
    发明授权
    MEMS RF-switch with near-zero impact landing 有权

    公开(公告)号：US11417487B2

    公开(公告)日：2022-08-16

    申请号：US16343912

    申请日：2017-09-14

    Applicant: CAVENDISH KINETICS, INC.

    Inventor： Richard L. Knipe ,  Robertus Petrus Van Kampen ,  James Douglas Huffman ,  Lance Barron

    IPC: H01H59/00 ,  H01H1/00

    Abstract: The present disclosure generally relates to the design of a MEMS ohmic switch which provides for a low-impact landing of the MEMS device movable plate on the RF contact and a high restoring force for breaking the contacts to improve the lifetime of the switch. The switch has at least one contact electrode disposed off-center of the switch device and also has a secondary landing post disposed near the center of the switch device. The secondary landing post extends to a greater height above the substrate as compared to the RF contact of the contact electrode so that the movable plate contacts the secondary landing post first and then gently lands on the RF contact. Upon release, the movable plate will disengage from the RF contact prior to disengaging from the secondary landing post and have a longer lifetime due to the high restoring force.

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