公开(公告)号：US20170069507A1

公开(公告)日：2017-03-09

申请号：US15120323

申请日：2015-04-30

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Qiang HUA ,  Yaohui ZHOU

IPC: H01L21/3105 ,  H01L21/02

CPC classification number: H01L21/31056 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3081 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76 ,  H01L21/762

Abstract: A chemical-mechanical polishing process using a silicon oxynitride anti-reflection layer (S340) includes: (S1) providing a semiconductor wafer comprising a substrate (S310), an oxidation layer (S320) formed on the substrate (S310), a silicon nitride layer (S330) formed on the oxidation layer (S320), an anti-reflection layer (S340) formed on the silicon nitride layer (S330), a trench extending through the anti-reflection layer (S340) and into the substrate (S310), and a first silicon dioxide layer (S350) filling the trench and covering the anti-reflection layer (S340); (S2) polishing the first silicon dioxide layer (S350) until the anti-reflection layer (S340) is exposed; (S3) removing the anti-reflection layer (S340) by dry etching; (S4) forming a second silicon dioxide layer (S360) on the surface of the semiconductor wafer from which the anti-reflection layer (S340) is removed; (S5) polishing the second silicon dioxide layer (S360) until the silicon nitride layer (S330) is exposed; (S6) and, removing the silicon nitride layer (S330).

Abstract translation: 使用氮氧化硅防反射层（S340）的化学机械抛光工艺包括：（S1）提供包括基板的半导体晶片（S310），形成在基板上的氧化层（S320）（S310），氮化硅 形成在氧化层上的层（S330）（S320），形成在氮化硅层上的防反射层（S340）（S330），延伸穿过防反射层（S340）并进入衬底（S310）的沟槽， 和填充该沟槽并覆盖防反射层的第一二氧化硅层（S350）（S340）; （S2）抛光第一二氧化硅层（S350），直到防反射层（S340）曝光; （S3）通过干蚀刻去除抗反射层（S340）; （S4）在去除了防反射层（S340）的半导体晶片的表面上形成第二二氧化硅层（S360） （S5）研磨第二二氧化硅层（S360），直到氮化硅层（S330）露出为止; （S6），除去氮化硅层（S330）。

公开(公告)号：US20240290846A1

公开(公告)日：2024-08-29

申请号：US18572595

申请日：2022-04-28

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Qun LIU ,  Song ZHANG ,  Yaohui ZHOU ,  Dejin WANG ,  Wenming ZHU

IPC: H01L29/40 ,  H01L29/45

CPC classification number: H01L29/401 ,  H01L29/456

Abstract: A forming method for a floating contact hole, and a semiconductor device. The method comprises: obtaining a substrate, and forming a tunnel oxide layer and a plurality of gates on the substrate; forming a metal silicide barrier layer; forming a self-aligned metal silicide; forming an interlayer dielectric layer; performing photoetching on the interlayer dielectric layer to obtain a photoresist pattern, the photoresist pattern comprising a small adhesive strip in the middle of the floating contact hole; and etching the floating contact hole by using the photoresist pattern as an etching mask layer.