公开(公告)号：US20170194160A1

公开(公告)日：2017-07-06

申请号：US15399810

申请日：2017-01-06

Applicant: Cabot Microelectronics Corporation

Inventor： Sudeep PALLIKKARA KUTTIATOOR ,  Renhe JIA ,  Kuen-Min CHEN ,  Steven KRAFT ,  Phillip W. CARTER

IPC: H01L21/3105 ,  C09K3/14 ,  C09G1/02

CPC classification number: H01L21/31053 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

Abstract: Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a substrate containing a low-k dielectric composition, which includes less than about 80% by weight of carbon, with a polishing pad and a chemical-mechanical polishing composition comprising water and abrasive particles having a positive surface charge, wherein the polishing composition has a pH of from about 3 to about 6; (b) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate; and (c) abrading at least a portion of the substrate to polish the substrate. In some embodiments, the low-k dielectric composition is carbon-doped silicon oxide.