Electron multiplier electrode and terahertz radiation source using the same
    1.
    发明申请
    Electron multiplier electrode and terahertz radiation source using the same 有权
    电子倍增器电极和太赫兹辐射源使用相同

    公开(公告)号:US20080164798A1

    公开(公告)日:2008-07-10

    申请号:US12007186

    申请日:2008-01-08

    IPC分类号: H01J43/04 G21G4/00

    CPC分类号: H01J43/04

    摘要: Provided are an electron multiplier electrode using a secondary electron extraction electrode and a terahertz radiation source using the electron multiplier electrode. The electron multiplier electrode includes: a cathode; an emitter disposed on the cathode and extracting electron beams; a gate electrode for switching the electron beams, the gate electrode being disposed on the cathode to surround the emitter; and a secondary electron extraction electrode disposed on the gate electrode and including a secondary electron extraction layer extracting secondary electrons due to collision of the electron beams.

    摘要翻译: 提供了使用二次电子提取电极和使用电子倍增器电极的太赫兹辐射源的电子倍增器电极。 电子倍增器电极包括:阴极; 设置在阴极上并提取电子束的发射器; 用于切换电子束的栅电极,栅电极设置在阴极上以围绕发射极; 以及二次电子提取电极,设置在栅电极上,并且包括由于电子束的碰撞而提取二次电子的二次电子提取层。

    Electron multiplier electrode and terahertz radiation source using the same
    2.
    发明授权
    Electron multiplier electrode and terahertz radiation source using the same 有权
    电子倍增器电极和太赫兹辐射源使用相同

    公开(公告)号:US07768181B2

    公开(公告)日:2010-08-03

    申请号:US12007186

    申请日:2008-01-08

    IPC分类号: H01J1/62

    CPC分类号: H01J43/04

    摘要: Provided are an electron multiplier electrode using a secondary electron extraction electrode and a terahertz radiation source using the electron multiplier electrode. The electron multiplier electrode includes: a cathode; an emitter disposed on the cathode and extracting electron beams; a gate electrode for switching the electron beams, the gate electrode being disposed on the cathode to surround the emitter; and a secondary electron extraction electrode disposed on the gate electrode and including a secondary electron extraction layer extracting secondary electrons due to collision of the electron beams.

    摘要翻译: 提供了使用二次电子提取电极和使用电子倍增器电极的太赫兹辐射源的电子倍增器电极。 电子倍增器电极包括:阴极; 设置在阴极上并提取电子束的发射器; 用于切换电子束的栅电极,栅电极设置在阴极上以围绕发射极; 以及二次电子提取电极,设置在栅电极上,并且包括由于电子束的碰撞而提取二次电子的二次电子提取层。

    Method of aging field emission devices
    3.
    发明授权
    Method of aging field emission devices 有权
    老化场发射装置的方法

    公开(公告)号:US07727039B2

    公开(公告)日:2010-06-01

    申请号:US11806658

    申请日:2007-06-01

    IPC分类号: H01J9/00 G09G3/00

    CPC分类号: H01J9/42 H01J29/04 H01J31/127

    摘要: A method of aging a field emission device including a cathode and an anode arranged parallel to each other, an emitter arranged on the cathode to emit electrons to the anode, and a gate electrode arranged on the cathode adjacent to the emitter, the method including: supplying a voltage to the cathode; supplying a voltage to the gate; and then supplying a sufficiently low voltage to the anode so as to prevent a short-circuited portion between the cathode and the gate electrode from being permanently damaged due to an overcurrent.

    摘要翻译: 一种老化场致发射器件的方法,该场致发射器件包括彼此平行布置的阴极和阳极,布置在阴极上以向阳极发射电子的发射极和布置在阴极上与发射极相邻的栅极,该方法包括: 向阴极供电; 向门提供电压; 然后向阳极提供足够低的电压,以防止阴极和栅电极之间的短路部分由于过电流而永久损坏。

    Method of aging field emission devices
    4.
    发明申请
    Method of aging field emission devices 有权
    老化场发射装置的方法

    公开(公告)号:US20080119104A1

    公开(公告)日:2008-05-22

    申请号:US11806658

    申请日:2007-06-01

    IPC分类号: H01J9/12

    CPC分类号: H01J9/42 H01J29/04 H01J31/127

    摘要: A method of aging a field emission device including a cathode and an anode arranged parallel to each other, an emitter arranged on the cathode to emit electrons to the anode, and a gate electrode arranged on the cathode adjacent to the emitter, the method including: supplying a voltage to the cathode; supplying a voltage to the gate; and then supplying a sufficiently low voltage to the anode so as to prevent a short-circuited portion between the cathode and the gate electrode from being permanently damaged due to an overcurrent.

    摘要翻译: 一种老化场致发射器件的方法,该场致发射器件包括彼此平行布置的阴极和阳极,布置在阴极上以向阳极发射电子的发射极和布置在阴极上与发射极相邻的栅极,该方法包括: 向阴极供电; 向门提供电压; 然后向阳极提供足够低的电压,以防止阴极和栅电极之间的短路部分由于过电流而永久损坏。

    Field emission device and its method of manufacture
    5.
    发明授权
    Field emission device and its method of manufacture 有权
    场发射装置及其制造方法

    公开(公告)号:US07755273B2

    公开(公告)日:2010-07-13

    申请号:US11798612

    申请日:2007-05-15

    IPC分类号: H01J1/62

    摘要: A field emission device and its method of manufacture includes: a substrate; a plurality of cathode electrodes formed on the substrate and having slot shaped cathode holes to expose the substrate; emitters formed on the substrate exposed through each of the cathode holes and separated from both side surfaces of the cathode holes, the emitters being formed along a lengthwise direction of the cathode holes; an insulating layer formed on the substrate to cover the cathode electrodes and having insulating layer holes communicating with the cathode holes; and a plurality of gate electrodes formed on the insulating layer and having gate holes communicating with the insulating layer holes.

    摘要翻译: 场致发射器件及其制造方法包括:衬底; 多个阴极电极,形成在基板上,并具有用于露出基板的狭槽形阴极孔; 所述发光体形成在所述基板上,通过所述阴极孔露出并从所述阴极孔的两侧面分离,所述发射体沿着所述阴极孔的长度方向形成; 绝缘层,形成在所述基板上以覆盖所述阴极并具有与所述阴极孔连通的绝缘层孔; 以及形成在绝缘层上并具有与绝缘层孔连通的栅极孔的多个栅电极。

    Field emission device and its method of manufacture
    6.
    发明申请
    Field emission device and its method of manufacture 有权
    场发射装置及其制造方法

    公开(公告)号:US20080111464A1

    公开(公告)日:2008-05-15

    申请号:US11798612

    申请日:2007-05-15

    IPC分类号: H01J3/02 H01J9/00

    摘要: A field emission device and its method of manufacture includes: a substrate; a plurality of cathode electrodes formed on the substrate and having slot shaped cathode holes to expose the substrate; emitters formed on the substrate exposed through each of the cathode holes and separated from both side surfaces of the cathode holes, the emitters being formed along a lengthwise direction of the cathode holes; an insulating layer formed on the substrate to cover the cathode electrodes and having insulating layer holes communicating with the cathode holes; and a plurality of gate electrodes formed on the insulating layer and having gate holes communicating with the insulating layer holes.

    摘要翻译: 场致发射器件及其制造方法包括:衬底; 多个阴极电极,形成在基板上,并具有用于露出基板的狭槽形阴极孔; 所述发光体形成在所述基板上,通过所述阴极孔露出并从所述阴极孔的两侧面分离,所述发射体沿着所述阴极孔的长度方向形成; 绝缘层,形成在所述基板上以覆盖所述阴极并具有与所述阴极孔连通的绝缘层孔; 以及形成在绝缘层上并具有与绝缘层孔连通的栅极孔的多个栅电极。

    Mask used for LIGA process, method of manufacturing the mask, and method of manufacturing microstructure using LIGA process
    7.
    发明申请
    Mask used for LIGA process, method of manufacturing the mask, and method of manufacturing microstructure using LIGA process 有权
    用于LIGA工艺的掩模,制造掩模的方法以及使用LIGA工艺制造微结构的方法

    公开(公告)号:US20080166640A1

    公开(公告)日:2008-07-10

    申请号:US11896273

    申请日:2007-08-30

    IPC分类号: G03C5/00 B05D5/06

    摘要: A mask used for a Lithographie, Galvanofomung, and Abformung (LIGA) process, a method for manufacturing the mask, and a method for manufacturing a microstructure using a LIGA process. The method for manufacturing the microstructure using the LIGA process contemplates forming a substrate for the microstructure, a plurality of photosensitive layers, each photosensitive layer having a plating hole and an aligning pinhole, and an aligning pin capable of being inserted into the aligning pinhole, with the aligning pinholes of the photosensitive layers being formed in corresponding positions, and repeating a process of stacking the photosensitive layer on the substrate for the microstructure and a process of forming a plating layer by plating the plating hole of the stacked photosensitive layer with a metal for a number of times corresponding to the number of the photosensitive layers, and when the photosensitive layers are stacked on the substrate for the structure, the photosensitive layers being aligned with one another by inserting the aligning pin into the aligning pinholes of all the photosensitive layers stacked on the substrate for the microstructure to penetrate all the photosensitive layers.

    摘要翻译: 用于石版印刷,Galvanofomung和Abformung(LIGA)工艺的掩模,用于制造掩模的方法以及使用LIGA工艺制造微结构的方法。 使用LIGA方法制造微结构的方法考虑形成用于微结构的基底,多个感光层,每个感光层具有电镀孔和对准针孔,以及能够插入到对准针孔中的对准销, 感光层的对准针孔形成在相应的位置上,并且重复将用于微结构的基板上的感光层层叠的工艺和通过用金属镀覆层叠的感光层的电镀孔来形成镀层的工艺 对应于感光层的数量的次数,并且当感光层堆叠在用于结构的基板上时,感光层通过将对准销插入到所有感光层的对准针孔中而彼此对准 在基板上用于微结构穿透 将感光层。

    Mask used for LIGA process, method of manufacturing the mask, and method of manufacturing microstructure using LIGA process
    8.
    发明授权
    Mask used for LIGA process, method of manufacturing the mask, and method of manufacturing microstructure using LIGA process 有权
    用于LIGA工艺的掩模,制造掩模的方法以及使用LIGA工艺制造微结构的方法

    公开(公告)号:US07609805B2

    公开(公告)日:2009-10-27

    申请号:US11896273

    申请日:2007-08-30

    IPC分类号: G21K5/00

    摘要: A mask used for a Lithographie, Galvanofomung, and Abformung (LIGA) process, a method for manufacturing the mask, and a method for manufacturing a microstructure using a LIGA process. The method for manufacturing the microstructure using the LIGA process contemplates forming a substrate for the microstructure, a plurality of photosensitive layers, each photosensitive layer having a plating hole and an aligning pinhole, and an aligning pin capable of being inserted into the aligning pinhole, with the aligning pinholes of the photosensitive layers being formed in corresponding positions, and repeating a process of stacking the photosensitive layer on the substrate for the microstructure and a process of forming a plating layer by plating the plating hole of the stacked photosensitive layer with a metal for a number of times corresponding to the number of the photosensitive layers, and when the photosensitive layers are stacked on the substrate for the structure, the photosensitive layers being aligned with one another by inserting the aligning pin into the aligning pinholes of all the photosensitive layers stacked on the substrate for the microstructure to penetrate all the photosensitive layers.

    摘要翻译: 用于石版印刷,Galvanofomung和Abformung(LIGA)工艺的掩模,用于制造掩模的方法以及使用LIGA工艺制造微结构的方法。 使用LIGA方法制造微结构的方法考虑形成用于微结构的基底,多个感光层,每个感光层具有电镀孔和对准针孔,以及能够插入到对准针孔中的对准销, 感光层的对准针孔形成在相应的位置上,并且重复将用于微结构的基板上的感光层层叠的工艺和通过用金属镀覆层叠的感光层的电镀孔来形成镀层的工艺 对应于感光层的数量的次数,并且当感光层堆叠在用于结构的基板上时,感光层通过将对准销插入到所有感光层的对准针孔中而彼此对准 在基板上用于微结构穿透 感光层。

    Method of fabricating field emission array type light emitting unit
    9.
    发明申请
    Method of fabricating field emission array type light emitting unit 有权
    场致发射阵列型发光单元的制造方法

    公开(公告)号:US20080102547A1

    公开(公告)日:2008-05-01

    申请号:US11907942

    申请日:2007-10-18

    IPC分类号: H01L33/00

    摘要: A method of fabricating a field emission array type light emitting unit that includes a rear substrate including a plurality of cathodes and a plurality of carbon nanotube emitters on a front side, a front substrate including a plurality of anodes and a phosphor layer on a rear side, wherein the rear substrate and the front substrate are arranged at a distance apart from each other and a plurality of spacers are arranged between the rear substrate and the front substrate, the plurality of spacers being adapted to maintain constant the distance, the method includes producing a diffusion pattern by wet etching a front side of the front substrate.

    摘要翻译: 一种制造场发射阵列型发光单元的方法,该发光阵列型发光单元包括:前表面上包括多个阴极和多个碳纳米管发射体的后基板,包括多个阳极的前基板和背面的荧光体层 其特征在于,所述后基板和所述前基板被配置成彼此间隔开,并且在所述后基板与所述前基板之间配置有多个间隔件,所述多个间隔件适于保持距离恒定,所述方法包括: 通过湿法蚀刻前基板的前侧的扩散图案。

    Method of fabricating field emission array type light emitting unit
    10.
    发明授权
    Method of fabricating field emission array type light emitting unit 有权
    场致发射阵列型发光单元的制造方法

    公开(公告)号:US07851231B2

    公开(公告)日:2010-12-14

    申请号:US11907942

    申请日:2007-10-18

    IPC分类号: H01L21/00

    摘要: A method of fabricating a field emission array type light emitting unit that includes a rear substrate including a plurality of cathodes and a plurality of carbon nanotube emitters on a front side, a front substrate including a plurality of anodes and a phosphor layer on a rear side, wherein the rear substrate and the front substrate are arranged at a distance apart from each other and a plurality of spacers are arranged between the rear substrate and the front substrate, the plurality of spacers being adapted to maintain constant the distance, the method includes producing a diffusion pattern by wet etching a front side of the front substrate.

    摘要翻译: 一种制造场发射阵列型发光单元的方法,该发光阵列型发光单元包括:前表面上包括多个阴极和多个碳纳米管发射体的后基板,包括多个阳极的前基板和背面的荧光体层 其特征在于,所述后基板和所述前基板被配置成彼此间隔开,并且在所述后基板与所述前基板之间配置有多个间隔件,所述多个间隔件适于保持距离恒定,所述方法包括: 通过湿法蚀刻前基板的前侧的扩散图案。