公开(公告)号：US06180447B2

公开(公告)日：2001-01-30

申请号：US09223540

申请日：1998-12-30

申请人： Chang-soo Park ,  Sang-in Lee ,  Hong-ku Paik

发明人： Chang-soo Park ,  Sang-in Lee ,  Hong-ku Paik

IPC分类号： H01L218242

CPC分类号： H01L21/7687 ,  H01L21/28568 ,  H01L21/76841 ,  H01L21/76849 ,  H01L21/76855 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75

摘要： A barrier layer is included in an integrated circuit capacitor, between a conductive plug and a lower capacitor electrode. The barrier layer includes refractory metal and grain boundary filling material. The grain boundary filling material preferably is Ce, Zr, Y, Th, Hf, La, Al and/or oxides thereof, and is preferably less that 20 atomic percent of the barrier layer. The barrier layer can reduce and preferably prevent diffusion of oxygen, and can thereby reduce the leakage current and oxidation of the integrated circuit capacitor.

摘要翻译： 在集成电路电容器中包括阻挡层，在导电插塞和下电容器电极之间。 阻挡层包括难熔金属和晶界填充材料。 晶界填充材料优选为Ce，Zr，Y，Th，Hf，La，Al和/或其氧化物，优选小于阻挡层的20原子％。 阻挡层可以减少并优选地防止氧的扩散，并且因此可以减小集成电路电容器的漏电流和氧化。

公开(公告)号：US5892254A

公开(公告)日：1999-04-06

申请号：US940258

申请日：1997-09-30

申请人： Chang-soo Park ,  Sang-in Lee ,  Hong-ku Paik

发明人： Chang-soo Park ,  Sang-in Lee ,  Hong-ku Paik

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L29/92 ,  H01L29/76 ,  H01L23/48 ,  H01L23/52 ,  H01L29/94

CPC分类号： H01L21/7687 ,  H01L21/76841 ,  H01L21/76849 ,  H01L21/76855 ,  H01L28/60 ,  H01L28/75 ,  H01L21/28568 ,  H01L28/55

摘要： A barrier layer is included in an integrated circuit capacitor, between a conductive plug and a lower capacitor electrode. The barrier layer includes refractory metal and grain boundary filling material. The grain boundary filling material preferably is Ce, Zr, Y, Th, Hf, La, Al and/or oxides thereof, and is preferably less that 20 atomic percent of the barrier layer. The barrier layer can reduce and preferably prevent diffusion of oxygen, and can thereby reduce the leakage current and oxidation of the integrated circuit capacitor.

摘要翻译： 在集成电路电容器中包括阻挡层，在导电插塞和下电容器电极之间。 阻挡层包括难熔金属和晶界填充材料。 晶界填充材料优选为Ce，Zr，Y，Th，Hf，La，Al和/或其氧化物，优选小于阻挡层的20原子％。 阻挡层可以减少并优选地防止氧的扩散，从而可以减小集成电路电容器的漏电流和氧化。