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公开(公告)号:US11708271B2
公开(公告)日:2023-07-25
申请号:US16062301
申请日:2016-12-09
Inventor: Hui Bi , Fuqiang Huang , Xinyuan Liu , Zhen Song , Yufeng Tang , Tongping Xiu
IPC: B32B9/00 , C01B32/198 , C23C16/26 , C01B32/186 , C01B32/182 , C03C17/22 , C23C16/50
CPC classification number: C01B32/198 , C01B32/182 , C01B32/186 , C03C17/22 , C23C16/26 , C03C2217/28 , C03C2217/40 , C03C2217/70 , C03C2218/111 , C03C2218/153 , C23C16/50
Abstract: Disclosed herein are methods for forming a graphene film on a substrate, the methods comprising depositing graphene on a surface of the substrate by a first vapor deposition step to form a discontinuous graphene crystal layer; depositing a graphene oxide layer on the discontinuous graphene crystal layer to form a composite layer; and depositing graphene on the composite layer by a second vapor deposition step, wherein the graphene oxide layer is substantially reduced to a graphene layer during the second vapor deposition step. Transparent coated substrates comprising such graphene films are also disclosed herein, wherein the graphene films have a resistance of less than about 10 KΩ/sq.
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公开(公告)号:US20180362393A1
公开(公告)日:2018-12-20
申请号:US16062301
申请日:2016-12-09
Applicant: Corning Incorporated
Inventor: Hui Bi , Fuqiang Huang , Xinyuan Liu , Zhen Song , Yufeng Tang , Tongping Xiu
IPC: C03C17/22 , C01B32/186 , C01B32/198
Abstract: Disclosed herein are methods for forming a graphene film on a substrate, the methods comprising depositing graphene on a surface of the substrate by a first vapor deposition step to form a discontinuous graphene crystal layer; depositing a graphene oxide layer on the discontinuous graphene crystal layer to form a composite layer; and depositing graphene on the composite layer by a second vapor deposition step, wherein the graphene oxide layer is substantially reduced to a graphene layer during the second vapor deposition step. Transparent coated substrates comprising such graphene films are also disclosed herein, wherein the graphene films have a resistance of less than about 10 KΩ/sq.
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公开(公告)号:US12037248B2
公开(公告)日:2024-07-16
申请号:US18211682
申请日:2023-06-20
Inventor: Hui Bi , Fuqiang Huang , Xinyuan Liu , Zhen Song , Yufeng Tang , Tongping Xiu
IPC: B32B9/00 , C01B32/182 , C01B32/186 , C01B32/198 , C03C17/22 , C23C16/26 , B82Y30/00 , C23C16/50
CPC classification number: C01B32/198 , C01B32/182 , C01B32/186 , C03C17/22 , C23C16/26 , B82Y30/00 , C03C2217/28 , C03C2217/40 , C03C2217/70 , C03C2218/111 , C03C2218/153 , C23C16/50 , Y10T428/30
Abstract: Disclosed herein are methods for forming a graphene film on a substrate, the methods comprising depositing graphene on a surface of the substrate by a first vapor deposition step to form a discontinuous graphene crystal layer; depositing a graphene oxide layer on the discontinuous graphene crystal layer to form a composite layer; and depositing graphene on the composite layer by a second vapor deposition step, wherein the graphene oxide layer is substantially reduced to a graphene layer during the second vapor deposition step. Transparent coated substrates comprising such graphene films are also disclosed herein, wherein the graphene films have a resistance of less than about 10 KΩ/sq.
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公开(公告)号:US20230348275A1
公开(公告)日:2023-11-02
申请号:US18211682
申请日:2023-06-20
Inventor: Hui Bi , Fuqiang Huang , Xinyuan Liu , Zhen Song , Yufeng Tang , Tongping Xiu
IPC: C01B32/198 , C01B32/182 , C01B32/186 , C03C17/22 , C23C16/26
CPC classification number: C01B32/198 , C01B32/182 , C01B32/186 , C03C17/22 , C23C16/26 , C23C16/50
Abstract: Disclosed herein are methods for forming a graphene film on a substrate, the methods comprising depositing graphene on a surface of the substrate by a first vapor deposition step to form a discontinuous graphene crystal layer; depositing a graphene oxide layer on the discontinuous graphene crystal layer to form a composite layer; and depositing graphene on the composite layer by a second vapor deposition step, wherein the graphene oxide layer is substantially reduced to a graphene layer during the second vapor deposition step. Transparent coated substrates comprising such graphene films are also disclosed herein, wherein the graphene films have a resistance of less than about 10 KΩ/sq.
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