Gate drive device
    1.
    发明授权

    公开(公告)号:US11901889B2

    公开(公告)日:2024-02-13

    申请号:US17898557

    申请日:2022-08-30

    CPC classification number: H03K17/687 H02M1/08 H03K17/16 H03K17/284

    Abstract: A gate drive device drives a gate of a semiconductor switching element constituting an upper or lower arm of a half bridge circuit which supplies an output current, which is alternating current, to a load. The gate drive device detects a peak value of an element voltage which is a voltage of a main terminal of the semiconductor switching element or a change rate of the element voltage when the semiconductor switching element is switching. The gate drive device acquires a maximum value among a plurality of peak values or a plurality of change rates during a predetermined detection period including a period in which the semiconductor switching element performs switching multiple number of times.

    Gate drive device
    2.
    发明授权

    公开(公告)号:US11909386B2

    公开(公告)日:2024-02-20

    申请号:US17898578

    申请日:2022-08-30

    CPC classification number: H03K17/687 H02M1/0048 H02M1/08 H03K17/16 H03K17/284

    Abstract: A gate drive device drives a gate of each of two semiconductor switching elements constituting upper and lower arms of a half bridge circuit. The gate drive device detects a peak value of an element voltage that is a voltage of a main terminal of one of the two semiconductor switching elements, as one semiconductor switching element, or a change rate of the element voltage during a change period in which the element voltage changes. The gate drive device determines whether an energization to the one semiconductor switching element during the change period is a forward energization in which a current flows in a forward direction or a reverse energization in which the current flows in a reverse direction.

    Drive circuit for switch
    3.
    发明授权

    公开(公告)号:US11218143B2

    公开(公告)日:2022-01-04

    申请号:US16658572

    申请日:2019-10-21

    Inventor: Tetsuya Dewa

    Abstract: A drive circuit Dr for a switch that reduces a surge voltage caused when a switch SW is switched to an off state. The drive circuit Dr detects, as an on voltage Von, a collector-emitter voltage of the switch SW while the switch SW is in an on state. When the detected on voltage Von is large, the drive circuit Dr sets a resistance value Rd of a discharging resistor 53 when the switch SW is switched to an off state to be larger than the resistance value Rd when the detected on voltage Von is small. More specifically, the drive circuit Dr sets the resistance value Rd to a larger value as the detected on voltage Von is increased.

    Circuit board manufacturing method

    公开(公告)号:US10772214B2

    公开(公告)日:2020-09-08

    申请号:US16679761

    申请日:2019-11-11

    Abstract: A manufacturing method for a circuit board in which a pin inserted in a through-hole of a land is welded to the land is disclosed. The land is covered with a white layer, and an irradiation angle of a laser beam with respect to the circuit board is adjusted so that reflected light of the laser beam emitted to the pin reaches the white layer on the land. As the reflected light of the laser beam is allowed to reach a white region provided on the land, the reflected light is scattered on the white region. A rate of absorption of the laser beam by the land is decreased, and a temperature increase of the land is restrained. As a result, a damage of an insulating part around the land is restrained.

    CIRCUIT BOARD MANUFACTURING METHOD AND CIRCUIT BOARD

    公开(公告)号:US20200154577A1

    公开(公告)日:2020-05-14

    申请号:US16679761

    申请日:2019-11-11

    Abstract: A manufacturing method for a circuit board in which a pin inserted in a through-hole of a land is welded to the land is disclosed. The land is covered with a white layer, and an irradiation angle of a laser beam with respect to the circuit board is adjusted so that reflected light of the laser beam emitted to the pin reaches the white layer on the land. As the reflected light of the laser beam is allowed to reach a white region provided on the land, the reflected light is scattered on the white region. A rate of absorption of the laser beam by the land is decreased, and a temperature increase of the land is restrained. As a result, a damage of an insulating part around the land is restrained.

    Drive apparatus for switch
    6.
    发明授权

    公开(公告)号:US10540234B2

    公开(公告)日:2020-01-21

    申请号:US16267662

    申请日:2019-02-05

    Abstract: In a drive apparatus, a transmission unit mounted to a first region stops transmission of a pulse signal from a physical-quantity transmission terminal. The transmission unit transmits, from the failure information transmission terminal, a first signal indicative of an occurrence of the failure associated with the target switch when it is determined that the failure associated with the target switch has occurred, and transmits, from the physical-quantity transmission terminal, a second signal indicative of a content of the failure associated with the target switch. A controller mounted to a second region electrically isolated from the first region detects, based on the pulse signal from the physical-quantity transmission terminal, the physical quantity upon no input of the first signal to the controller. The controller identifies, based on the second signal transmitted from the physical-quantity transmission terminal, the content of the failure upon the first signal being input to the controller.

    Drive circuit for switching elements

    公开(公告)号:US10530155B2

    公开(公告)日:2020-01-07

    申请号:US15730120

    申请日:2017-10-11

    Inventor: Tetsuya Dewa

    Abstract: A drive circuit drives a plurality of switching elements connected in parallel to each other. The drive circuit includes an operating unit that performs first and second switching processes. In the first switching process, under a condition that a first current detection value acquired before next time an on-command is received is determined to fall below a first threshold that is equal to or less than a threshold current, an on-operation target that is used the next time the on-command is received is set to a second switching element. In the second switching process, under a condition that the second current detection value acquired before the next time the on-command is received is determined to exceed a second threshold that is equal to or greater than the threshold current, the on-operation target that is used the next time the on-command is received is set to a first switching element.

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